Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors
Data(s) |
01/05/2013
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Resumo |
Gd2O3-based metal-insulator-metal capacitors have been characterized with single layer (Gd2O3) and bilayer (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) stacks for analog and DRAM applications. Although single layer Gd2O3 capacitors provide highest capacitance density (15 fF/mu m(2)), they suffer from high leakage current density, poor capacitance density-voltage linearity, and reliability. The stacked dielectrics help to reduce leakage current density (1.2x10(-5) A/cm(2) and 2.7 x 10(-5) A/cm(2) for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at -1 V), improve quadratic voltage coefficient of capacitance (331 ppm/V-2 and 374 ppm/V-2 for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at 1 MHz), and improve reliability, with a marginal reduction in capacitance density. This is attributed to lower trap heights as determined from Poole-Frenkel conduction mechanism, and lower defect density as determined from electrode polarization model. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/46796/1/IEEE_Tran_Ele_Devi_60-5_1523_2013.pdf Padmanabhan, Revathy and Bhat, Navakanta and Mohan, Sangeneni (2013) Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors. In: IEEE Transactions on Electron Devices, 60 (5). pp. 1523-1528. |
Publicador |
IEEE-Inst Electrical Electronics Engineers Inc |
Relação |
http://dx.doi.org/10.1109/TED.2013.2249854 http://eprints.iisc.ernet.in/46796/ |
Palavras-Chave | #Electrical Communication Engineering |
Tipo |
Journal Article PeerReviewed |