无指盘臭蛙免疫调节肽、其基因和变异体及其在制药中的应用

本发明涉及无指盘臭蛙免疫调节肽、基因和变异体及其在制药中的应用，属生物医学技术领域。无指盘臭蛙免疫调节肽是一种环状多肽，分子量1791.12道尔顿，等电点 9.84，无指盘臭蛙免疫调节肽的全序列为：Thr Ser Arg Cys Tyr Ile Gly Tyr Arg Arg Lys Val Val Cys Ser(TSRCYIGYRRKVVCS)，其第4位的半胱氨酸和第14位的半胱氨酸形成分子内二硫键。编码的基因由307个核苷酸组成，其中编码成熟部分的为第 141-186位核苷酸。无指盘臭蛙免疫调节肽原始序列中第4个氨基酸发生替代所产生的变异体，人工合成的无指盘臭蛙免疫调节肽及其变异体具有强烈的免疫调节活性和肿瘤抑制活性，作为制备免疫调节、肿瘤治疗和化疗药物的应用。本发明还具有序列简单、合成方便等优点。

Study on macroscopic, microscopic and hormonal changes in gonads of the crayfish Astacus leptodactylus in Aras Dam

This study was carried out to seasonal determination of some morphological characteristics, Seasonal fecundity, Seasonal fluctuations of vertebrate-type steroids and seasonal analysis of gonadal histology in both female and male sexes of freshwater crayfish (Astacus leptodactylus Eschscholtz 1823) in the area of Aras dam Lake. Crayfish were collected respectively in June, August, November (2011) and January (2012). The average length and weight of male crayfish was higher than that of females. %GSI of females fluctuated within an extended range (between 0.6 and 13.5% from June to January). Both of synchronous and asynchronous ovaries were seen in August sampled ovaries; however asynchronous form was higher than another. The annual reproductive cycle of male A. leptodactylus was surveyed by study on the seasonal changes of the external appearance of the testes and vasa deferentia, fluctuations in the gonadosomatic index (GSI%) and the histological analysis of the male reproductive system. Based on the histological differentiation of testis, spermatogenisis devided to 5 separated stages. The findings suggested asynchronous testis in the species A.leptodactylus. The presence of primary spermatophore layer may help keeping spermatozoa alive while the secondary spermatophore layer may produces spermatophore or synthesize of acellular material which forms spermatophre. Pleopodal fecundity was 37.3%lower than ovarian fecundity observed. The significantly higher number of eggs attached to 3rd and 4th pairs of pleopods. The egg number and gonadosomatic index increased with female size while egg weight and egg diameter didn’t increase with female size. Hemolymph levels of 17β-estradiol and progesterone followed a similar fluctuation pattern with % GSI in females, while testosterone didn’t follow the mentioned pattern. The testis of November sampled crayfish presented significantly higher gonadosomatic (%GSI) index (P < 0.05).The most observed gonadosomaticindices were 13.5%(forfemales) and 1.21% (for males, in autumn. Althogh the lowest GSI was (0.50%) formales in spring and (0.26%0 for spent females in January. Testosterone which followed a similar pattern with %GSI in males increased remarkably in November. 17β-estradiol increased strictly in January. The strictly enhancement of the three estroid hormones in January in both male and female sexes could bedue totheir stimulating role in in spermatophre and egg lying in the mating season (In January). Most of the ovaries followed the asynchoronous growth pattern. Also the testes presented asynchoronous growth pattern in autumn.

云南墨江药用蜈蚣分布及活动规律研究

对墨江蜈蚣的分布、生活环境、生活习性做了初步研究。指出墨江蜈蚣的生 活期是3月中旬 至10月中下旬, 此期间的温度在18—23℃, 湿度75—85%, 降雨 量为50—280mm, 日照射数225—115h。蒸发量200—100mm。图1

武汉莲花湖微囊藻毒素含量变化特征及其影响因素的研究

采用现场采样及室内测试方法,研究了武汉莲花湖水华消亡过程中微囊藻毒素和环境生态因子的变化规律,并探讨了环境生态因子对微囊藻毒素产生的影响。结果表明,莲花湖微囊藻毒素含量以MC-LR为主,在水华消亡时大量释放到水体中,且较高的藻毒素含量能持续数天。对环境因子的相关分析表明,水体中的微囊藻毒素含量与铵氮、总磷显著正相关,与氮磷比显著负相关(P<0.05)。根据多元逐步回归统计进一步分析,筛选出相对重要的影响因子及合并共线形因子。经显著性检验,逐步回归统计结果为MC=13.62+5.77×NH4+-0.48×T

Differentiable neural substrates for learned and described value and risk.

Studies of human decision making emerge from two dominant traditions: learning theorists [1-3] study choices in which options are evaluated on the basis of experience, whereas behavioral economists and financial decision theorists study choices in which the key decision variables are explicitly stated. Growing behavioral evidence suggests that valuation based on these different classes of information involves separable mechanisms [4-8], but the relevant neuronal substrates are unknown. This is important for understanding the all-too-common situation in which choices must be made between alternatives that involve one or another kind of information. We studied behavior and brain activity while subjects made decisions between risky financial options, in which the associated utilities were either learned or explicitly described. We show a characteristic effect in subjects' behavior when comparing information acquired from experience with that acquired from description, suggesting that these kinds of information are treated differently. This behavioral effect was reflected neurally, and we show differential sensitivity to learned and described value and risk in brain regions commonly associated with reward processing. Our data indicate that, during decision making under risk, both behavior and the neural encoding of key decision variables are strongly influenced by the manner in which value information is presented.

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

SOI-based 16x16 thermo-optic waveguide switch matrix

A 16 x 16 thermo-optic wavelenght switch matrix has been designed and febricated on silicon-on-insulator wafer. For reducing device lenght, blocking switch matrix configuration is chosen. The building block of a matix is a 2 x 2 cell with Mach-Zehnder interferometer configuration, where a multi-mode interferometer serves as splitters/combiners. Spot size converters and isolating grooves are integrated on the same chip to reduce loss and power consumption. Average power consumption of the switch cell is 220 mW. The switching time of a switch cell is less than 3 mu s.

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. (C) 2001 American Institute of Physics.

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection

Homoepitaxial growth of 4H-SiC p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H-2. The surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. The UV photodetectors fabricated on 4H-SiC p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the UV range.

Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

Micro-raman investigation of defects in a 4H-SiC homoepilayer

Three types of defects, namely defect I, defect 11, defect 111, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect 11 and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect 11 was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.