Solution processable quinoxaline based molecular materials for organic field effect transistors

Three new solution processable quinoxaline based donor-acceptor-donor (D-A-D) type molecules have been synthesized for application in field effect transistors. These molecules were characterized by UV-visible spectroscopy, thermal gravimetric analysis, differential scanning calorimetry and cyclic voltammetry. DFT calculation gives deeper insight into the electronic structure of these molecules. The crystallinity and morphology features of thin film were investigated using X-ray diffraction. These molecules show liquid crystalline phase confirmed by DSC and optical polarizing microscopy. Investigation of their field effect transistor performance indicated that these molecules exhibited p-type mobility up to 9.7 x 10 (4) cm(2) V (1) s (1) and on/off ratio of 10(4). (C) 2012 Elsevier B.V. All rights reserved.

Cyclopentac]thiophene oligomers based solution processable D-A copolymers and their application as FET materials

Two new solution processable, low band gap donor-acceptor (D-A) copolymers (P1 and P2) comprising a cyclopentac] thiophene (CPT) based oligomers as donors and benzoc]1,2,5] selenadiazole (BDS) and 2-dodecyl1,2,3]-benzotriazole (BTAz) as acceptors were synthesized and characterized and their field effect transistor properties were studied. The internal charge transfer interaction between the electron-donating CPT based oligothiophene and the electron-accepting BDS or BTAz unit effectively reduces the band gap in polymers to 1.3 and 1.66 eV with low lying highest occupied molecular orbital (HOMO). The absorption spectrum of P1 was found to be more red shifted than that of P2 because of incorporation of the more electron-withdrawing BDS unit. The color of neutral P1 was found to be green in both solution and film states with two major bands in the absorption spectra; however, neutral P2 revealed one dominant absorption exhibiting red color in both solution and film state which could be attributed to the less electron-withdrawing effect of the BTAz unit. The polymers were further characterized by GPC, TGA, DSC and cyclic voltammetry. P1 and P2 exhibited charge carrier mobilities as high as 9 x 10(-3) cm(2) V-1 s(-1) and 2.56 x 10(-3) cm 2 V-1 s(-1), respectively with the current on/off ratio (I-on/I-off) in the order of 10(2).

Mass of highly magnetized white dwarfs exceeding the Chandrasekhar limit: An analytical view

In recent years a number of white dwarfs have been observed with very high surface magnetic fields. We can expect that the magnetic field in the core of these stars would be much higher (similar to 10(14) G). In this paper, we analytically study the effect of high magnetic field on relativistic cold electron, and hence its effect on the stability and the mass-radius relation of a magnetic white dwarf. In strong magnetic fields, the equation of state of the Fermi gas is modified and Landau quantization comes into play. For relatively very high magnetic fields (with respect to the average energy density of matter) the number of Landau levels is restricted to one or two. We analyze the equation of states for magnetized electron degenerate gas analytically and attempt to understand the conditions in which transitions from the zeroth Landau level to first Landau level occurs. We also find the effect of the strong magnetic field on the star collapsing to a white dwarf, and the mass-radius relation of the resulting star. We obtain an interesting theoretical result that it is possible to have white dwarfs with mass more than the mass set by Chandrasekhar limit.

On the solution of bivariate population balance equations for aggregation: Pivotwise expansion of solution domain

The solution of a bivariate population balance equation (PBE) for aggregation of particles necessitates a large 2-d domain to be covered. A correspondingly large number of discretized equations for particle populations on pivots (representative sizes for bins) are solved, although at the end only a relatively small number of pivots are found to participate in the evolution process. In the present work, we initiate solution of the governing PBE on a small set of pivots that can represent the initial size distribution. New pivots are added to expand the computational domain in directions in which the evolving size distribution advances. A self-sufficient set of rules is developed to automate the addition of pivots, taken from an underlying X-grid formed by intersection of the lines of constant composition and constant particle mass. In order to test the robustness of the rule-set, simulations carried out with pivotwise expansion of X-grid are compared with those obtained using sufficiently large fixed X-grids for a number of composition independent and composition dependent aggregation kernels and initial conditions. The two techniques lead to identical predictions, with the former requiring only a fraction of the computational effort. The rule-set automatically reduces aggregation of particles of same composition to a 1-d problem. A midway change in the direction of expansion of domain, effected by the addition of particles of different mean composition, is captured correctly by the rule-set. The evolving shape of a computational domain carries with it the signature of the aggregation process, which can be insightful in complex and time dependent aggregation conditions. (c) 2012 Elsevier Ltd. All rights reserved.

Robust solver based on modified particle swarm optimization for improved solution of diffusion transport through containment facilities

Accurate estimation of mass transport parameters is necessary for overall design and evaluation processes of the waste disposal facilities. The mass transport parameters, such as effective diffusion coefficient, retardation factor and diffusion accessible porosity, are estimated from observed diffusion data by inverse analysis. Recently, particle swarm optimization (PSO) algorithm has been used to develop inverse model for estimating these parameters that alleviated existing limitations in the inverse analysis. However, PSO solver yields different solutions in successive runs because of the stochastic nature of the algorithm and also because of the presence of multiple optimum solutions. Thus the estimated mean solution from independent runs is significantly different from the best solution. In this paper, two variants of the PSO algorithms are proposed to improve the performance of the inverse analysis. The proposed algorithms use perturbation equation for the gbest particle to gain information around gbest region on the search space and catfish particles in alternative iterations to improve exploration capabilities. Performance comparison of developed solvers on synthetic test data for two different diffusion problems reveals that one of the proposed solvers, CPPSO, significantly improves overall performance with improved best, worst and mean fitness values. The developed solver is further used to estimate transport parameters from 12 sets of experimentally observed diffusion data obtained from three diffusion problems and compared with published values from the literature. The proposed solver is quick, simple and robust on different diffusion problems. (C) 2012 Elsevier Ltd. All rights reserved.

Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Vacancy wind effect on interdiffusion in a dilute Cu(Sn) solid solution

A study has been conducted on a Cu(Sn) solid solution to examine the role of the vacancy wind effect on interdiffusion. First, the interdiffusion and the intrinsic diffusion coefficients are calculated. The trend of the interdiffusion coefficients is explained with the help of the driving force. Following this, the tracer diffusion coefficients of the species are calculated with and without consideration of the vacancy wind effect. We found that the role of the vacancy wind is negligible on the minor element in a dilute solid solution, which is the faster diffusing species in this system and controls the interdiffusion process. However, consideration of this effect is important to understand the diffusion rate of the major element, which is the slower diffusing species in this system.

Quantum capacitance in bilayer graphene nanoribbon

We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved.

Solution Combustion Synthesis of Nanosized Copper Chromite and Its Use as a Burn Rate Modifier in Solid Propellants

Nano sized copper chromite, which is used as a burn rate accelerator for solid propellants, was synthesized by the solution combustion process using citric acid and glycine as fuel. Pure spinel phase copper chromite (CuCr2O4) was synthesized, and the effect of different ratios of Cu-Cr ions in the initial reactant and various calcination temperatures on the final properties of the material were examined. The reaction time for the synthesis with glycine was lower compared to that with citric acid. The synthesized samples from both fuel cycles were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), BET surface area analysis, and scanning electron microscope (SEM). Commercial copper chromite that is currently used in solid propellant formulation was also characterized by the same techniques. XRD analysis shows that the pure spinel phase compound is formed by calcination at 700 degrees C for glycine fuel cycle and between 750 and 800 degrees C for citric acid cycle. XPS results indicate the variation of the oxidation state of copper in the final compound with a change in the Cu-Cr mole ratio. SEM images confirm the formation of nano size spherical shape particles. The variation of BET surface area with calcination temperature was studied for the solution combusted catalyst. Burn rate evaluation of synthesized catalyst was carried out and compared with the commercial catalyst. The comparison between BET surface area and the burn rate depicts that surface area difference caused the variation in burn rate between samples. The reason behind the reduction in surface area and the required modifications in the process are also described.

Synthesis, luminescence and EPR studies on CaSiO 3: Pb, Mn-nano phosphors synthesized by the solution combustion method

Nano-ceramic phosphor CaSiO 3 doped with Pb and Mn was synthesized by the low temperature solution combustion method. The materials were characterized by Powder X-Ray Diffraction (XRD), Thermo-gravimetric and Differential Thermal Analysis (TG-DTA), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The Electron Paramagnetic Resonance (EPR) spectrum of the investigated sample exhibits a broad resonance signal centered at g=1.994. The number of spins participating in resonance (N) and its paramagnetic susceptibility (�) have been evaluated. Photoluminescence of doped CaSiO 3 was investigated when excited by UV radiation of 256 nm. The phosphor exhibits an emission peak at 353 nm in the UV range due to Pb 2+. Further, a broad emission peak in the visible range 550-625 nm can be attributed to 4T 1� 6A 1 transition of Mn 2+ ions. The investigation reveals that doping perovskite nano-ceramics with transition metal ions leads to excellent phosphor materials for potential applications. © 2012 Elsevier Ltd and Techna Group S.r.l.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.