Spin and charge currents through a quantum dot connected to ferromagnetic leads

We investigate the spin polarized current through a quantum dot connected to ferromagnetic leads in the presence of a finite spin-dependent chemical potential. The effects of the spin polarization of the leads p and the external magnetic field B are studied. It is found that both the magnitude and the symmetry of the current are dependent on the spin polarization of the leads. When the two ferromagnetic leads are in parallel configuration, the spin polarization p has an insignificant effect on the spin current, and an accompanying charge current appears with the increase of p. When the leads are in antiparallel configuration, however, the effect of p is distinct. The charge current is always zero regardless of the variation of p in the absence of B. The peaks appearing in the pure spin current are greatly suppressed and become asymmetric as p is increased. The applied magnetic field B results in an accompanying charge current in both the parallel and antiparallel configurations of the leads. The characteristics of the currents are explained in terms of the density of states of the quantum dot.

Spin-polarized transport through an Aharonov-Bohm interferometer with Rashba spin-orbit interaction

We study electron transport through an Aharonov-Bohm (AB) interferometer with a noninteracting quantum dot in each of its arms. Both a magnetic flux phi threading through the AB ring and the Rashba spin-orbit (SO) interaction inside the two dots are taken into account. Due to the existence of the SO interaction, the electrons flowing through different arms of the AB ring will acquire a spin-dependent phase factor in the tunnel-coupling strengths. This phase factor, as well as the influence of the magnetic flux, will induce various interesting interference phenomena. We show that the conductance and the local density of states can become spin polarized by tuning the magnetic flux and the Rashba interaction strength. Under certain circumstances, a pure spin-up or spin-down conductance can be obtained when a spin-unpolarized current is injected from the external leads. Therefore, the electron spin can be manipulated by adjusting the Rashba spin-orbit strength and the structure parameters. (c) 2006 American Institute of Physics.

Quantum trajectory analysis for electrical detection of single-electron spin resonance

A Monte Carlo simulation on the basis of quantum trajectory approach is carried out for the measurement dynamics of a single-electron spin resonance. The measured electron, which is confined in either a quantum dot or a defect trap, is tunnel coupled to a side reservoir and continuously monitored by a mesoscopic detector. The simulation not only recovers the observed telegraphic signal of detector current, but also predicts unique features in the output power spectrum which are associated with electron dynamics in different regimes.

Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

We demonstrate tunnel magnetoresistance junctions based on a trilayer system consisting of an epitaxial NiMnSb, an aluminum oxide, and a CoFe trilayer. The junctions show a tunneling magnetoresistance of Delta R/R of 8.7% at room temperature which increases to 14.7% at 4.2 K. The layers show a clear separate switching and a small ferromagnetic coupling. A uniaxial in-plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications. (c) 2006 American Institute of Physics.

Study on the reverse characteristics of Ti/6H-SiC Schottky contacts

The reverse I(V) measurement and analytic calculation of the electron transport across a Ti/6H-SiC Schottky barrier are presented. Based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across Ti/SiC interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a WKB calculation of the tunneling probability through a reverse biased Schottky barrier. This model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. The fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. It is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a SiC Schottky contacts in a normal working condition.

Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure

When an intersubband relaxation is involved in vertical transport in a tunneling heterostructure, the magnetic suppression of the intersubband LO or LA phonon scattering may also give rise to a noticeable depression of the resonant tunneling current, unrelated to the Coulomb correlation effect. The slowdown of the intersubband scattering rate makes fewer electrons able to tunnel resonantly between two adjacent quantum wells (QWs) in a three-barrier, two-well heterostructure. The influence of the magnetic field on the intersubband relaxation can be studied in an explicit way by a physical model based on the dynamics of carrier populations in the ground and excited subbands of the incident QW. (C) 1998 American Institute of Physics. [S0003-6951(98)00925-5].

Photoluminescence from Ge clusters embedded in porous silicon

Visible photoluminescence (PL) and Raman spectra of Ge clusters embedded in porous silicon (PS) have been studied. The as-prepared sample shows redshifted and enhanced room temperature PL relative to reference PS. This result can be explained by the quantum confinement effect on excitons in Ge clusters and tunnel of excitons from Si units of the PS skeleton to Ge clusters. One year storage in dry air results in a pronounced decrease in PL intensity but blue-shifted in contrast to reference PS. This phenomenon correlates to the size decrease of macerated Ce clusters and occurrence of "quantum depletion" in Ge clusters. Consequently, only excitons in Si units contribute to PL. (C) 1998 American Institute of Physics.

The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells

Tandem amorphous silicon solar cells have attracted extensive interest because of better performance than single junction counterpart. As n/p junctions play an important role in the current transportation of tandem solar cells, it is important to design and fabricate good n/p junctions.The properties of the n/p junction of amorphous silicon (a-Si) were studied. We investigate the effect of interposing a nanocrystalline p(+) layer between n (top cell) and p (bottom cell) layers of a tandem solar cell. The crystalline volume fraction, the band gap, the conductivity and the grain size of the nanocrystalline silicon (nc-Si) p(+) layer could be modulated by changing the deposition parameters.Current transport in a-Si based n/p ("tunnel") junctions was investigated by current-voltage measurements. The voltage dependence on the resistance (V/J) of the tandem cells was examined to see if n/p junction was ohmic contact. To study the affection of different doping concentration to the properties of the nc-Si p(+) layers which varied the properties of the tunnel junctions, three nc-Si p(+) film samples were grown, measured and analyzed.

马蹄形过水断面临界水深的直接计算法

马蹄形过水断面是无压隧洞较常采用的断面形式之一,水力计算中临界水深的求解无显函数公式,传统的试算法或查图法不仅计算过程繁琐复杂,而且计算精度不高。该文通过对马蹄形断面临界流方程的数学变换,并对本文引入的无量纲参数与相对临界水深的关系分析及数值计算,应用逐步优化拟合原理,得到标准Ⅰ、Ⅱ型马蹄形断面临界水深的直接计算式。实例计算及误差分析表明:在工程实用范围内该公式最大相对误差仅为0.8%,且该式物理概念清晰明确、公式形式简捷,为工程设计及水工设计手册的编制提供有益的参考。

NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

高焓风洞中带翼钝锥体尾流电子密度的测量与分析

报道了在爆轰驱动高焓激波风洞中开展带尾翼钝锥体电子密度测试的相关研究工作进展.试验气流为4km/s,密度为0.001kg/m3.诊断尾翼对尾流的影响时,为不影响流场并获得足够的空间分辨率采用针状静电探针;实验结果给出带尾翼模型对尾流电子密度影响的定量结果及受影响的空间区域

Design Study of a Heavily Loaded Ice Class Propeller Using an Advance Panel Method

A design and optimization procedure developed and used for a propeller installed on a twin-semitunnel-hull ship navigating in very shallow and icy water under heavy load conditions is presented. The base propeller for this vessel was first determined using classic design routines under open-water condition with existing model test data. In the optimization process, a panel method code (PROPELLA) was used to vary the pitch values and distributions and take into account the inflow wake distribution, tunnel gap, and cavitation effects. The optimized propeller was able to improve a ship speed of 0.02 knots higher than the desired speed and 0.06 knots higher than the classic B-series propeller. The analysis of the effect of inflow wake, hull tunnel, cavitation, and blade rake angle on propulsive performance is the focus of this paper.

Controlling parameter for wave types of long flexible riser undergoing vortex-induced vibration

Submerged floating tunnel (SFT) is a popular concept of crossing waterways. The failure of the cable may occur due to vortex-induced-vibration (VIV), and the stability of the cable is crucial to the safety of the entire tunnel. Investigation results in recent years show that the vortex-induced vibration of the flexible cables with large aspect ratio reveals some new phenomena, for example, the vortex-induced wave, multi-mode competition, wide band random vibration, which have brought new challenges to the study of vortex-induced vibration of long flexible cables. In this paper, the dimensionless parameter controlling the wave types of dynamic response of slender cables undergoing vortex-induced vibration is investigated by means of dimensional analysis and finite element numerical simulations. Our results indicate that there are three types of response for a slender cable, i.e. standing wave vibration, traveling wave vibration and intermediate state. Based on dimensional analysis the controlling parameter is found to be related to the system damping including fluid damping and structural damping, order number of the locked-in modes and the aspect ratio of cable. Furthermore through numerical simulations and parameter regression, the expression and the critical value of controlling parameter is presented. At last the physical meaning of the parameter is analyzed and discussed.