Numerical simulation of quantum directional couplers

A numerical analysis of a quantum directional coupler based on Pi-shaped electron waveguides is presented with use of the scattering-matrix method. After the optimization of the device parameters, uniform output for the two output ports and high directivity are obtained within a wide range of the electron momenta. The electron transfer in the device is found more efficient than that in the previously proposed structures. The study of the shape-dependence of transmission for the device shows that the device structure with smooth boundaries exhibits a much better performance.

Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers

We numerically investigate four-wave-mixing (FWM) based multichannel wavelength conversion for amplitude-modulated signals, phase-modulated signals, together with mixed amplitude and phase modulated signals. This paper also discusses the influence of stimulated Brillouin scattering (SBS) effects on high-efficiency FWM-based wavelength conversion applications. Our simulation results show that DPSK signals are more suitable for FWM-based multichannel wavelength conversion because the OOK signals will suffer from the inevitable datapattern-dependent pump depletion. In future applications, when the modulation format is partially upgraded from OOK to DPSK, the influence of OOK signals on the updated DPSK signals must be considered when using multichannel wavelength conversion. This influence becomes severe with the increase of OOK channel number. It can be concluded that DPSK signals are more appropriate for both transmission and multichannel wavelength conversion,especially in long haul and high bit-rate system.

A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy

We report a new method for calculating transmission coefficients across arbitrary potential barriers based on the Runge-Kutta method. A numerical solution of the Schrodinger equation is calculated using the Runge-Kutta method,and a new model is established to analyze the numerical results to find the transmission coefficient. This technique is applied to various cases, such as parabolic potential barrier and double-barrier structures. Transmission probability with high precision is obtained and discussed. The tunnelling current density through a MOS structure is also explored and the result coincides with the Fowler-Nordheim model,which indicates the applicability of our method.

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

Numerical Analysis of Steady Current and Temper ature Distributions and Characteristics of Transverse Mode in VCSEL

国家自然科学基金

Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT

A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of InAlAs/InGaAs HEMT are discussed.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.