Structural, electrical, and optical analysis of ion implanted semi-insulating InP

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. (C) 2004 American Institute of Physics.

Suppression of spatiotemporal chaos in the oscillatory CO oxidation on Pt(110) by focused laser light

Chemical turbulence in the oscillatory catalytic CO oxidation on Pt(110) is suppressed by means of focused laser light. The laser locally heats the platinum surface which leads to a local increase of the oscillation frequency, and to the formation of a pacemaker which emits target waves. These waves slowly entrain the medium and suppress the spatiotemporal chaos present in the absence of laser light. Our experimental results are confirmed by a detailed numerical analysis of one- and two-dimensional media using the Krischer-Eiswirth-Ertl model for CO oxidation on Pt110. Different control regimes are identified and the dispersion relation of the system is determined using the pacemaker as an externally tunable wave source.

Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated. © 2006 IEEE.

Phase synchronization of a two-channel phase-sensitive amplifier based on optical injection-locking of InP quantum-dash mode-locked lasers

A synchronization scheme for a two-channel phase sensitive amplifier is implemented based on the injection-locking of single InP quantum-dash mode-locked laser. Error free performance with penalty <1 dB is demonstrated for both channels. © 2011 Optical Society of America.

Propene combustion over a model Pt/Al2O3/NiAl{110} catalyst

The genesis of a catalytically active model Pt/Al2O3/NiAl{110} oxidation catalyst is described. An ultrathin, crystalline γ-Al2O3 film was prepared via direct oxidation of a NiAl{110} single-crystal substrate. The room-temperature deposition of Pt clusters over the γ-Al2O3 film was characterised by LEED, AES and CO titration and follows a Stranski–Krastanov growth mode. Surface sulfation was attempted via SO2/O2 adsorption and thermal processing over bare and Pt promoted Al2O3/NiAl{110}. Platinum greatly enhances the saturation SOx coverage over that of bare alumina. Over clean Pt/γ-Al2O3 surfaces some adsorbed propene desorbs molecularly [similar]250 K while the remainder decomposes liberating hydrogen. Coadsorbed oxygen or sulfate promote propene combustion, with adsorbed sulfoxy species the most efficient oxidant. The chemistry of these alumina-supported Pt clusters shows a general evolution from small polycrystalline clusters to larger clusters with properties akin to low-index, Pt single-crystal surfaces.

Progress toward 100-G digital coherent pluggables using InP-based photonics

A new generation of high-capacity WDM systems with extremely robust performance has been enabled by coherent transmission and digital signal processing. To facilitate widespread deployment of this technology, particularly in the metro space, new photonic components and subsystems are being developed to support cost-effective, compact, and scalable transceivers. We briefly review the recent progress in InP-based photonic components, and report numerical simulation results of an InP-based transceiver comprising a dual-polarization I/Q modulator and a commercial DSP ASIC. Predicted performance penalties due to the nonlinear response, lower bandwidth, and finite extinction ratio of these transceivers are less than 1 and 2 dB for 100-G PM-QPSK and 200-G PM-16QAM, respectively. Using the well-established Gaussian-Noise model, estimated system reach of 100-G PM-QPSK is greater than 600 km for typical ROADM-based metro-regional systems with internode losses up to 20 dB. © 1983-2012 IEEE.

InP-based active and passive components for communication systems at 2 μm

Progress on advanced active and passive photonic components that are required for high-speed optical communications over hollow-core photonic bandgap fiber at wavelengths around 2 μm is described in this paper. Single-frequency lasers capable of operating at 10 Gb/s and covering a wide spectral range are realized. A comparison is made between waveguide and surface normal photodiodes with the latter showing good sensitivity up to 15 Gb/s. Passive waveguides, 90° optical hybrids, and arrayed waveguide grating with 100-GHz channel spacing are demonstrated on a large spot-size waveguide platform. Finally, a strong electro-optic effect using the quantum confined Stark effect in strain-balanced multiple quantum wells is demonstrated and used in a Mach-Zehnder modulator capable of operating at 10 Gb/s.

Efecto de la fuente y nivel de zinc en el comportamiento productivo de machos no castrados (40-110 kg) y su relación con el comportamiento sexual

El uso de fuentes de Zn (orgánicas e inorgánicas) en el pienso de cerdos prepúberes se ha mostrado indispensable, ya que este mineral ha evidenciado beneficios relacionados con aspectos reproductivos, respuesta inmunitaria, estado de salud, ganancia de peso, consumo de pienso. Los primeros estudios que identificaron al Zn como componente fundamental en la reproducción fueron en la década de los 40´s, en donde se estableció la importancia de este mineral en el desarrollo de las células de Leydig, a partir de estos descubrimientos se recomienda la utilización del mineral en el pienso de los cerdos. Sin embargo, las recomendaciones que se han hecho para apoyar el efecto del Zn en la reproducción, fueron identificadas hace 30 años, y poco se ha estudiado desde entonces con respecto al nivel de Zn que habría que incluir en el pienso. Por otra parte, la industria alimenticia animal ha desarrollado fuentes minerales con mayor biodisponibilidad, por un lado para que el organismo pueda utilizarlo más rápida y eficientemente (>biodisponibilidad) y por otra parte para evitar que el mineral consumido por el animal, se pierda a través de las deyecciones, asegurando con ello no solo la reducción de las pérdidas económicas, sino la minimización del impacto ambiental que el Zn ejerce negativamente. De esta manera, se decidió realizar una investigación que proporcionara información sobre el efecto de las fuentes y niveles de Zn, en la eficiencia de crecimiento y desarrollo de cerdos prepúberes y verracos jóvenes, en el desarrollo de los testículos y sus estructuras celulares, así como en el comportamiento sexual de los verracos jóvenes. Para lo anterior se utilizaron 50 cerdos de la línea genética York x Landrace, con un peso medio inicial de 35±1.25, estos animales se distribuyeron en siete tratamientos, los cuales correspondieron a dietas formuladas con y sin la adición de fuente de Zn (ZnSO4, ZnO, ZnMet) , y a dos niveles (150ppm y 200ppm de Zn). La dieta base fue formulada utilizando la tabla de necesidades nutritivas del FEDNA (2006). Todos los cerdos fueron colocados en jaulas individuales, con comedero y bebedero individual. Se les dio un periodo de adaptación de 15 días, posteriormente se inició la fase experimental en la que se midió el consumo de pienso (CDP), conversión alimenticia (CA), ganancia de peso (GDP), al finalizar el periodo de crianza (Crecimiento, Desarrollo y Finalización) y los cerdos llegaron a un peso mayor a 100Kg, se sacrificaron tres cerdos, de los cuales se obtuvieron los testículos, epidídimos, bazo, páncreas, hueso (fémur), hígado y riñones, para analizar a través de Espectrofotometría de Absorción Atómica la concentración de Zn...

Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

The authors would like to thank the staff of the James Watt Nanofabrication Centre at the University of Glasgow for help in fabricating the devices which is reported in this paper. ‘Part of this work was supported by ESPRC through EP/H011862/ 1, and EP/H012966/1.

An investigation by AFM and TEM of the mechanism of anodic formation of nanoporosity in n-InP in KOH

The early stages of nanoporous layer formation, under anodic conditions in the absence of light, were investigated for n-type InP with a carrier concentration of ∼3× 1018 cm-3 in 5 mol dm-3 KOH and a mechanism for the process is proposed. At potentials less than ∼0.35 V, spectroscopic ellipsometry and transmission electron microscopy (TEM) showed a thin oxide film on the surface. Atomic force microscopy (AFM) of electrode surfaces showed no pitting below ∼0.35 V but clearly showed etch pit formation in the range 0.4-0.53 V. The density of surface pits increased with time in both linear potential sweep and constant potential reaching a constant value at a time corresponding approximately to the current peak in linear sweep voltammograms and current-time curves at constant potential. TEM clearly showed individual nanoporous domains separated from the surface by a dense ∼40 nm InP layer. It is concluded that each domain develops as a result of directionally preferential pore propagation from an individual surface pit which forms a channel through this near-surface layer. As they grow larger, domains meet, and the merging of multiple domains eventually leads to a continuous nanoporous sub-surface region.

Anodic formation and characterization of nanoporous InP in aqueous KOH electrolytes

The anodic behavior of highly doped (> 1018 cm-3) n-InP in aqueous KOH was investigated. Electrodes anodized in the absence of light in 2- 5 mol dm-3 KOH at a constant potential of 0.5- 0.75 V (SCE), or subjected to linear potential sweeps to potentials in this range, were shown to exhibit the formation of a nanoporous subsurface region. Both linear sweep voltammograms and current-time curves at constant potential showed a characteristic anodic peak, corresponding to formation of the nanoporous region. No porous region was formed during anodization in 1 mol dm-3 KOH. The nanoporous region was examined using transmission electron microscopy and found to have a thickness of some 1- 3 μm depending on the anodization conditions and to be located beneath a thin (typically ∼40 nm), dense, near-surface layer. The pores varied in width from 25 to 75 nm and both the pore width and porous region thickness were found to decrease with increasing KOH concentration. The porosity was approximately 35%. The porous layer structure is shown to form by the localized penetration of surface pits into the InP, and the dense, near-surface layer is consistent with the effect of electron depletion at the surface of the semiconductor.

Nanoporous InP: anodic formation and growth mechanism in aqueous electrolytes

Porous layers can be formed electrochemically on (100) oriented n-InP substrates in aqueous KOH. A nanoporous layer is obtained underneath a dense near-surface layer and the pores appear to propagate from holes through the near-surface layer. In the early stages of the anodization transmission electron microscopy (TEM) clearly shows individual porous domains that appear to have a square-based pyramidal shape. Each domain appears to develop from an individual surface pit which forms a channel through this near-surface layer. We suggest that the pyramidal structure arises as a result of preferential pore propagation along the <100> directions. AFM measurements show that the density of surface pits increases with time. Each of these pits acts as a source for a pyramidal porous domain. When the domains grow, the current density increases correspondingly. Eventually the domains meet, forming a continuous porous layer, the interface between the porous and bulk InP becomes relatively flat and its total effective surface area decreases resulting in a decrease in the current density. Current-time curves at constant potential exhibit a peak and porous layers are observed to form beneath the electrode surface. The density of pits formed on the surface increases with time and approaches a plateau value. Porous layers are also observed in highly doped InP but are not observed in wafers with doping densities below ~5 × 1017 cm-3. Numerical models of this process have been developed invoking a mechanism of directional selectivity of pore growth preferentially along the <100> lattice directions. Manipulation of the parameters controlling these curves shows that the fall-off in current is controlled by the rate of diffusion of electrolyte through the pore structure with the final decline in current being caused by the termination of growth at the pore tips through the formation of passivating films or some other irreversible modification of the pore tips.

Simultaneous observation of current oscillations and porous film growth during anodization of InP

The observation of spontaneous oscillations in current during the anodization of InP in relatively high concentrations of KOH electrolytes is reported. Oscillations were observed under potential sweep and constant potential conditions. Well-defined oscillations are observed during linear potential sweeps of InP in 5 mol dm-3 KOH to potentials above ∼1.7 V (SCE) at scan rates in the range of 50 to 500 mV s-1. The oscillations observed exhibit an asymmetrical current versus potential profile, and the charge per cycle was found to increase linearly with potential. More complex oscillatory behavior was observed under constant potential conditions. Periodic damped oscillations are observed in high concentrations of electrolyte whereas undamped sinusoidal oscillations are observed in relatively lower concentrations. In both cases, the anodization of InP results in porous InP formation, and the current in the oscillatory region corresponds to the cyclical effective area changes due to pitting dissolution of the InP surface with the coincidental growth of a thick porous In2O3 film.

Anodic behavior of InP: film growth, porous structures and current oscillations.

We review our recent work on the anodization of InP in KOH electrolytes. The anodic oxidation processes are shown to be remarkably different in different concentrations of KOH. Anodization in 2 - 5 mol dm-3 KOH electrolytes results in the formation of porous InP layers but, under similar conditions in a 1 mol dm-3 KOH, no porous structure is evident. Rather, the InP electrode is covered with a thin, compact surface film at lower potentials and, at higher potentials, a highly porous surface film is formed which cracks on drying. Anodization of electrodes in 2 - 5 mol dm-3 KOH results in the formation of porous InP under both potential sweep and constant potential conditions. The porosity is estimated at ~65%. A thin layer (~ 30 nm) close to the surface appears to be unmodified. It is observed that this dense, near-surface layer is penetrated by a low density of pores which appear to connected it to the electrolyte. Well-defined oscillations are observed when InP is anodized in both the KOH and (NH4)2S. The charge per cycle remains constant at 0.32 C cm-2 in (NH4)2S but increases linearly with potential in KOH. Although the characteristics of the oscillations in the two systems differ, both show reproducible and well-behaved values of charge per cycle.

Pitting and porous layer formation on n-InP anodes

Surface pitting occurs when InP electrodes are anodized in KOH electrolytes at concentrations in the range 2 - 5 mol dm-3. The process has been investigated using atomic force microscopy (AFM) and the results correlated with cross-sectional transmission electron microscopy (TEM) and electroanalytical measurements. AFM measurements show that pitting of the surface occurs and the density of pits is observed to increase with time under both potentiodynamic and potentiostatic conditions. This indicates a progressive pit nucleation process and implies that the development of porous domains beneath the surface is also progressive in nature. Evidence for this is seen in plan view TEM images in which individual domains are seen to be at different stages of development. Analysis of the cyclic voltammograms of InP electrodes in 5 mol dm-3 KOH indicates that, above a critical potential for pit formation, the anodic current is predominantly time dependent and there is little differential dependence of the current on potential. Thus, pores continue to grow with time when the potential is high enough to maintain depletion layer breakdown conditions.