Experimentally estimated dead space for GaAs and InP based planar Gunn diodes
Contribuinte(s) |
University of Aberdeen, Natural & Computing Sciences, Physics |
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Data(s) |
02/09/2016
02/09/2016
28/11/2014
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Resumo |
The authors would like to thank the staff of the James Watt Nanofabrication Centre at the University of Glasgow for help in fabricating the devices which is reported in this paper. ‘Part of this work was supported by ESPRC through EP/H011862/ 1, and EP/H012966/1. Peer reviewed Publisher PDF |
Formato |
5 |
Identificador |
Maricar , M I , Khalid , A , Cumming , D , Dunn , G & Oxley , C H 2014 , ' Experimentally estimated dead space for GaAs and InP based planar Gunn diodes ' Semiconductor Science and Technology , vol 30 , no. 1 , 114502 . , 10.1088/0268-1242/30/1/012001 0268-1242 PURE: 70015827 PURE UUID: 87ee3aba-204f-46f1-8678-f2643ee9ba83 |
Idioma(s) |
eng |
Relação |
Semiconductor Science and Technology |
Direitos |
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. https://creativecommons.org/licenses/by/4.0/ |
Palavras-Chave | #dead space #planar Gunn diode #GaAs material #InP material #TA Engineering (General). Civil engineering (General) #Engineering and Physical Sciences Research Council (EPSRC) #EP/H011862 #d EP/H012966/1 #TA |
Tipo |
Journal article |