Experimentally estimated dead space for GaAs and InP based planar Gunn diodes


Autoria(s): Maricar, Mohamed Ismaeel; Khalid, A; Cumming, D.; Dunn, G; Oxley, C. H.
Contribuinte(s)

University of Aberdeen, Natural & Computing Sciences, Physics

Data(s)

02/09/2016

02/09/2016

28/11/2014

Resumo

The authors would like to thank the staff of the James Watt Nanofabrication Centre at the University of Glasgow for help in fabricating the devices which is reported in this paper. ‘Part of this work was supported by ESPRC through EP/H011862/ 1, and EP/H012966/1.

Peer reviewed

Publisher PDF

Formato

5

Identificador

Maricar , M I , Khalid , A , Cumming , D , Dunn , G & Oxley , C H 2014 , ' Experimentally estimated dead space for GaAs and InP based planar Gunn diodes ' Semiconductor Science and Technology , vol 30 , no. 1 , 114502 . , 10.1088/0268-1242/30/1/012001

0268-1242

PURE: 70015827

PURE UUID: 87ee3aba-204f-46f1-8678-f2643ee9ba83

http://hdl.handle.net/2164/7436

http://dx.doi.org/10.1088/0268-1242/30/1/012001

Idioma(s)

eng

Relação

Semiconductor Science and Technology

Direitos

Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. https://creativecommons.org/licenses/by/4.0/

Palavras-Chave #dead space #planar Gunn diode #GaAs material #InP material #TA Engineering (General). Civil engineering (General) #Engineering and Physical Sciences Research Council (EPSRC) #EP/H011862 #d EP/H012966/1 #TA
Tipo

Journal article