~(12)C~(6+)离子辐射对细胞存活增殖及模拟失重和辐射对家蚕卵发育的影响

目的:观察重离子辐射后人骨肉瘤细胞MG-63、人胚胎皮肤成纤维细胞ESF-1和人胚胎肝正常细胞HEL-1的生存和增殖情况,及重离子辐射和模拟失重环境处理后家蚕卵的孵化和发育情况,初步探讨重离子辐射对细胞及复合环境对家蚕卵的一些生物学效应.方法:利用超导磁体模拟失重环境,利用重离子加速器产生12C6+离子,用不同剂量辐射细胞和家蚕卵,检测在重离子辐射后细胞的存活和克隆形成能力及复合条件下家蚕卵的发育情况.结果:HEL-1细胞在0.1Gy时存活率已经开始降低,且随辐射剂量的增大这种影响也增加,到1.5Gy时存活率降低50%.ESF-1细胞在1.5Gy时存活率下降约20%,但辐射对骨肉瘤MG-63细胞的存活率影响不大.HEL-1和ESF-1细胞受到0.1Gy的辐射后克隆形成能力就明显降低90.2%和79.1%,而MG-63细胞一直保持较高的克隆形成率,直到1.5Gy时迅速降低75%.家蚕的出蚁率随辐射剂量的增大而降低,到30Gy时出蚁率降到2.22%.当辐射剂量为0～10Gy时,家蚕卵在两种不同重力条件下的孵化率没有明显差异.但当辐射剂量增加到15,20和30Gy时,失重环境明显促进了家蚕卵的孵化.另外,失重环境下家蚕卵的孵化时间比正常条件下缩短约3d左右.同时,高剂量的辐射处理会延迟家蚕幼虫的生长.结论:重离子辐射降低了细胞的存活和增殖能力,同时影响了家蚕从受精卵到幼虫的发育,降低了出蚁率.失重环境可以缩短家蚕卵的孵化时间.

~(17)B的晕结构特征

实验利用束流衰减法测量了43.7AMeV丰中子核17B与C靶反应的总截面σR=(1724±93)mb.用零程Glauber计算,假定17B具有核芯15B和两个价中子结构,输入GG和GO密度分布,计算的激发函数曲线与该实验数据很好符合,输入描述稳定核双参数Fermi密度分布,不能得到与实验数据符合的结果,表明17B是核芯15B+2n的假定是合理的.并且中子密度分布表现较大空间扩展-晕结构特征.

丰中子奇异核~(17)B的实验研究

在兰州重离子加速器国家实验室(HIRFL)放射性次级束流线(RIBLL)上,用束流透射法测量了丰中子奇异核17B与C靶反应的总截面.假定17B具有15B(核芯)+2n结构,采用Gauss+HO形式的密度分布和零力程Glauber模型进行计算的结果可以很好地拟合实验数据,并得出17B的密度分布有一个很大的弥散,表明17B是双中子晕核.

~(12)C~(6+)离子辐照小鼠全脑对其空间记忆的影响

为了研究12C6+离子辐照昆明小鼠全脑对其空间记忆的影响,采用0、0.5、1和2Gy的12C6+离子束辐照昆明小鼠全脑,用八臂迷宫测试小鼠在迷宫中的觅食速度,以及其空间记忆的变化。结果发现,辐照使小鼠的觅食速度降低,但随着训练次数的增加,受辐照组与对照组的觅食速度都提高,到训练第17天,辐照组与对照组觅食能力基本相同;辐照使小鼠的空间记忆能力短期下降,但随着时间的增加,辐照组小鼠的空间记忆能力恢复到了对照水平。以上结果提示,在0～2Gy的碳离子辐照的剂量水平,辐照在短期内影响小鼠的记忆,在一定时间后,这种影响得到恢复。

Columnar aerosol optical properties at AERONET sites in central eastern Asia and aerosol transport to the tropical mid-Pacific

IEECAS SKLLQG

F同位素的反应总截面测量和~(17)F可能的质子皮结构

应用透射法对中能区F同位素与C靶的反应总截面进行了测量 .发现17F的反应总截面比其邻近同位素的反应总截面稍有增强 .用Glauber模型和BUU模型对F同位素进行了差异因子d的分析 .17F的差异因子d比其附近同位素稍有增强 .分析结果表明17F可能存在质子皮结构 .

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Measurement of the inelastic branch of the O-14(alpha, p)F-17 reaction: Implications for explosive burning in novae and x-ray bursters

A measurement of the inelastic component of the key astrophysical resonance in the 14O(α,p)17F reaction for burning and breakout from hot carbon-nitrogen-oxygen (CNO) cycles is reported. The inelastic component is found to be comparable to the ground-state branch and will enhance the 14O(α,p)17F reaction rate. The current results for the reaction rate confirm that the 14O(α,p)17F reaction is unlikely to contribute substantially to burning and breakout from the CNO cycles under novae conditions. The reaction can, however, contribute strongly to the breakout from the hot CNO cycles under the more extreme conditions found in x-ray bursters.

The properties of halo structure for B-17

The total reaction cross section (1724 +/- 93 mb) of B-17 at the energy of 43.7 A MeV on C target has been measured by using the transmission method at the Radioactive Ion Beam Line in Lanzhou (RIBLL). Assuming B-17 consists of a core B-15 plus two halo neutrons, the total cross section of B-17 on C target was calculated with the zero-range Glauber model, where double Gaussian density distributions and Gaussian plus HO density distributions were used. It can fit the experimental data very well. The characteristic of halo structure for B-17 was found with a large diffusion of the neutrons density distribution.

Configuration of the valence neutrons of B-17

The reaction cross section of B-17 on C-12 target at (43.7 +/- 2.4) MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou (RIBLL). The root-mean-square matter radius (R-rms) was deduced to be (2.92 +/- 0.10) fm, while the R-rms of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively. Assuming a "core plus 2n" structure in B-17, the mixed configuration of (2s(1/2)) and (1d(5/2)) of the valence neutrons is studied and the s-wave spectroscopic factor is found to be (80 +/- 21)%.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed.