低分子有机酸对辣椒生长发育及叶片活性氧代谢的影响

采用盆栽试验与室内分析相结合的方法,研究了6种低分子有机酸和一种有机酸盐对辣椒生长发育和叶片活性氧代谢的影响。结果表明:柠檬酸、乙酰丙酸和有机酸钾处理不仅可显著提高辣椒根系干质量,增加辣椒vC含量,而且提高了辣椒的产量。甲酸、柠檬酸、乙酰丙酸和有机酸钾处理使根系活力比对照分别提高83%、93.8%、96.75%和99.5%。柠檬酸、乙酰丙酸和有机酸钾处理提高了辣椒叶片的SOD和POD活性,降低了膜脂过氧化产物MDA含量,延缓了叶片衰老。但是低分子有机酸处理对CAT活性的影响较小。

氮、磷、钾对膜荚黄芪生长发育及有效成分的影响

目的:研究氮、磷、钾及其配比对膜荚黄芪生长发育及有效成分的影响。方法:通过田间试验,采用氮、磷、钾3因素2次D-饱和最优设计,研究氮、磷、钾及其配比对膜荚黄芪生长及有效成分的影响。结果:施肥促进了膜荚黄芪幼苗的生长,从而为生育后期膜荚黄芪根生长、产量形成及有效成分的累积提供充足的营养基础。氮、磷、钾各元素及其配比明显促进了茎叶及根干物质积累,氮、磷、钾对膜荚黄芪干物质累积总量的影响程度依次为氮>钾>磷;对膜荚黄芪茎叶干物质累积量的影响程度依次为氮>磷>钾;对根干物质累积量的影响程度依次为氮>钾>磷。施肥明显提高了膜荚黄芪根产量,氮、磷、钾对根产量影响程度依次为氮>钾>磷。氮、磷、钾各元素及其配比使黄芪多糖、黄芪甲苷含量明显增加,对总黄酮含量影响不明显。氮、磷、钾对黄芪多糖含量影响程度依次为钾>磷>氮;对黄芪甲苷含量的影响程度依次为氮>钾>磷。结论:氮、钾对膜荚黄芪生长发育,产量形成及多糖,黄芪甲苷含量有重要的影响。根类中药材黄芪的栽培过程中应该注重氮、钾肥的施用,并注意氮、磷、钾的配合施用。

FET ACTIVE SLOTLINE NOTCH ANTENNAS FOR QUASI-OPTICAL POWER COMBINING

A new active antenna structure with applications in quasi-optical power combining is described. The active antenna combines a slotline FET oscillator with a notch antenna. The new structure was successfully used to create both E-plane and H-plane linear arrays as well as a 2-D array. Preliminary results of radiation patterns and the power combining efficiencies of the arrays are discussed.

A NEW RESULT IN TRANSIENT CURRENT EXPERIMENT ON A-SI-H P/I/N AND N/I/N DEVICES

The transient current response of a-Si:H in both p/i/n and n/i/n structures has been measured as a function of pulse intermittence and pulse amplitude. The results are consistent with the picture that in p/i/n samples the peculiar current response is caused by the competing contributions of electrons and holes which show themselves in different time scales.

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics.

DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS/ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight subbands in the well with well width of 50 Angstrom. Among them, five levels and the other three remainders are determined by using the large longitudinal electron effective mass m(1)(1.1m(0)) and transverse electron effective mass m(t)(0.19m(0)) at X valley, respectively. Two subbands with the height energies were hardly detectable and the other six ones with lower energies are active in the present DLTS study. Because these six subbands are close to each other, we divided them into three groups. Experimentally, we observed three signals induced from the three groups. A good agreement between the calculation and experiment was obtained. (C) 1995 American Institute of Physics.

A multi-standard active-RC filter with accurate tuning system

A low-power, highly linear, multi-standard, active-RC filter with an accurate and novel tuning architec-ture is presented. It exhibits 1EEE 802. 11a/b/g (9.5 MHz) and DVB-H (3 MHz, 4 MHz) application. The filter exploits digitally-controlled polysilicon resistor banks and a phase lock loop type automatic tuning system. The novel and complex automatic frequency calibration scheme provides better than 4 comer frequency accuracy, and it can be powered down after calibration to save power and avoid digital signal interference. The filter achieves OIP3 of 26 dBm and the measured group delay variation of the receiver filter is 50 ns (WLAN mode). Its dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from a 2.85 V supply. The dissipation of calibration consumes 2 mA. The circuit has been fabricated in a 0.35μm 47 GHz SiGe BiCMOS technology; the receiver and transmitter filter occupy 0.21 mm~2 and 0.11 mm~2 (calibration circuit excluded), respectively.

High-performance electroabsorption modulator

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

Influence of a tilted cavity on quantum-dot optoelectronic active devices

Quantum-dot laser diodes (QD-LDs) with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design.A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots.

Study of intensity-dependent nonlinear optical coefficients of GaP optical crystal at 800 nm by femtosecond pump-probe experiment

The intensity-dependent two-photon absorption and nonlinear refraction coefficients of GaP optical crystal at 800 nm were measured with time-resolved femtosecond pump-probe technique. A nonlinear refraction coefficient of 1.7*10^(-17) m2/W and a two-photon absorption coefficient of 1.5*10^(-12) m/W of GaP crystal were obtained at a pump intensity of 3.5*10^(12) W/m2. The nonlinear refraction coefficient saturates at 3.5*10^(12) W/m2, while the two-photon absorption coefficient keeps linear increase at 6*10^(12) W/m2. Furthermore, fifth-order nonlinear refraction of the GaP optical crystal was revealed to occur above pump intensity of 3.5*10^(12) W/m2.