Prevalência das injúrias orofaciais e uso de protetores bucais em uma população de atletas que praticam futebol e jiu-jitsu

Este estudo epidemiológico teve por objetivo investigar a prevalência de injúria orofacial em dois grupos de atletas. O primeiro grupo foi de atletas integrantes do Fluminense Futebol Clube, em Xerém, e o segundo de atletas praticantes do jiu-jitsu em diferentes academias ou que participaram do Campeonato Brasileiro em 2011, no Rio de Janeiro. Um examinador calibrado, auxiliado por um assistente, preencheu os questionários com todos os atletas, seguido do exame clínico de todos. Grupo I: 260 atletas do Fluminense Futebol Clube com idade média de 14,08 (DP 2,71) anos de idade, todos do gênero masculino. Grupo II: 315 atletas de diversas academias de jiu-jitsu com idade média de 26,86 (DP 8,99), dentre esses indivíduos, apenas 10 eram do gênero feminino. A prevalência de injúrias orofaciais encontrada para o Grupo I foi de 47% (n=122; IC 95% 40,94% a 52,99%) e no Grupo II de 74,6% (n=235; IC 95% 69,52% a 79,09%). Considerando-se a prevalência de trauma apenas no elemento dentário, a prevalência diminuiu de 147 injúrias para 57 traumas dentais no futebol e de 289 injúrias para 93 traumas dentais no jiu-jitsu. Foi observada uma menor prevalência de injúria orofacial nos goleiros quando comparados aos outros jogadores de futebol. A maior parte das injúrias ocorreu durante o período do treino (n=42; IC 95% 26,59% a 43,22%) e apenas 4 desses atletas usavam protetor bucal. Por outro lado, no jiu-jitsu, a prevalência de injúria variou de acordo com a cor da faixa do uniforme do atleta. Os atletas da faixa preta exibiram mais injúrias (n=83). Atletas que treinavam de 7 a 15 horas por semana, sofreram mais injúria (n=109). A maioria das injúrias ocorreu durante o treino. Somente 28,57% dos atletas (IC 95% 23,86% a 33,79%) usavam protetor bucal. Nos dois esportes, a maioria dos atletas sofreu apenas uma injúria, sendo o tipo mais frequente em tecido mole. O dente mais atingido foi o incisivo central superior. Estes dados ressaltam a importância de incentivar o uso de protetores bucais em esportes de contato como o futebol e o jiu-jitsu, onde o seu uso não é obrigatório, apesar da prevalência de injúria orofacial ser alta.

River Bray fisheries survey 1978-80

This is the River Bray fisheries survey 1978-80 report produced by South West Water Authority in 1981. This report aims to assess the possible effects of new abstraction conditions at Leahamford on the fish communities of the River Bray, surveys have been carried out in 1978, 197S and 1980. Field work was done in August and September each; year. Abstraction began in summer 1979. On the River Bray one site upstream and three downstream of Leahamford were chosen. One site on the River Mole was surveyed and is considered as a control site, being not directly affected by abstraction. The sketch map shows these sites in relation to Leahamford.

Modelagem Numérica da Construção de Aterro Instrumentado na Baixada Fluminense, Rio de Janeiro.

A complexidade na previsão do comportamento de aterros sobre solos compressíveis representa um desafio para os engenheiros geotécnicos, mesmo os mais experientes. As limitações das teorias de análise e a dificuldade na seleção de parâmetros muitas vezes acarretam em estimativas de recalque incoerentes com a observação de campo. O presente trabalho tem como objetivo reproduzir a seqüência construtiva de extenso aterro, instrumentado, executado na Baixada Fluminense, Rio de Janeiro, para implantação da indústria Rio Polímeros, utilizando o programa PLAXIS. Os parâmetros geotécnicos foram definidos a partir de ensaios oedométricos, tendo sido realizado um estudo prévio sobre a qualidade das amostras. Estes parâmetros foram confrontados com a experiência local, que resume mais de 30 anos de investigações na argila mole da Baixada Fluminense, no Rio de Janeiro. Apesar da distância entre os locais de investigações, não houve diferenças significativas entre os parâmetros geotécnicos. As análises numéricas foram realizadas considerando-se diferentes hipóteses para o coeficiente de permeabilidade, de forma a reproduzir adequadamente as leituras de placa de recalque e poropressão registradas no campo. Este parâmetro teve grande influência na resposta da modelagem numérica, tendo sido obtidos bons resultados com valores de permeabilidade variando em função da profundidade.

Binding of radio-iodinated gonadotropin to the ovary of exotic carp (Cyprinus carpio Lin.)

Heterologous murrel gonadotropic hormone (m-GtH) binds to common carp oocyte plasma membrane and enhances steroid secretion. With increasing concentration of radio-labelled hormone the receptor binding is also found to increase linearly up to a certain concentration and then decrease. The [¹²⁵I] murrel GtH binding characteristics to a preparation of common carp ovarian plasma membrane shows saturability with high affinity. Scat chard plot analysis gave dissociation constant (Kd) of 0.81 X 10(super -9) M and maximum binding capacity (MBC) of 22.05 f mole/mg protein.

Characterization and molecular cloning of dabocetin, a potent antiplatelet C-type lectin-like protein from Daboia russellii siamensis venom

A novel C-type lectin-like protein, dabocetin, was purified from Daboia russellii siamensis venom. On SDS-polyacrylamide gel electrophoresis, it showed a single band with an apparent molecular weight of 28 kDa and two distinct bands with the apparent mole

Evolution and biogeography of talpid moles from continental East Asia and the Japanese islands inferred from mitochondrial and nuclear gene sequences

We sequenced the cytochrome b gene from two little-studied mammal species from the highlands of Southwest China, the long-tailed mole Scaptonyx fusicaudus and the gracile shrew-like mole Uropsilus gracilis. This data was used to examine the phylogenetic r

KARYOTYPE EVOLUTION OF SHREW MOLES (SORICOMORPHA: TALPIDAE)

The Chinese long-tailed mole (Scaptonyx fusicaudus) closely resembles American (Neurotrichus gibbsii) and Japanese (Dymecodon pilirostris and Urotrichus talpoides) shrew moles in size, appearance, and ecological habits, yet it has traditionally been classified either together with (viz subfamily Urotrichinae) or separately (tribe Scaptonychini) from the latter genera (tribe Urotrichini sensu lato). We explored the merit of these competing hypotheses by comparing the differentially stained karyotypes of S.fusicaudus and N. gibbsii with those previously reported for both Japanese taxa. With few exceptions, diploid chromosome number (2n = 34), fundamental autosomal number (FNa = 64), relative size, and G-banding pattern of S. fusicaudus were indistinguishable from those of D. pilirostris and U. talpoides. In fact, only chromosome 15 differed significantly between these species, being acrocentric in D. pilirostris, subtelocentric in U. talpoides, and metacentric in S. fusicaudus. This striking similarity is difficult to envisage except in light of a shared common ancestry, and is indicative of an exceptionally low rate of chromosomal evolution among these genera. Conversely, the karyotype of N. gibbsii deviates markedly in diploid chromosome and fundamental autosomal number (2n = 38 and FNa = 72, respectively), morphology, and G-banding pattern from those of Scaptonyx and the Japanese shrew moles. These differences cannot be explained by simple chromosomal rearrangements, and Suggest that rapid chromosomal reorganization Occurred ill the karyotype evolution of this species, possibly due to founder or bottleneck events.

基于从头算的缬氨酸两性离子和水分子的相互作用势

首先用从头算方法计算缬氨酸两性离子同处于160种不同位置的水分子的相互作用能, 计算 时采用最小基组并进行了基组重叠修正, 最后对计算得的相互作用能Slater-Kirkwood 公式作色散能修正; 然后进行势函数的拟合, 即舍弃12个相互作用能大于5Kcal/mole或原子间距离小于1.68A的布点, 对其余148个布点进行拟合。拟合结果的标准偏差为SD=0.48Kcal/mole。图1表3参13

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.

CO2-gasification of a lignite coal in the presence of an iron-based oxygen carrier for chemical-looping combustion

Chemical-looping combustion (CLC) has the inherent property of separating the product CO2 from flue gases. Instead of air, it uses an oxygen carrier, usually in the form of a metal oxide, to provide oxygen for combustion. All techniques so far proposed for chemical looping with solid fuels involve initially the gasification of the solid fuel in order for the gaseous products to react with the oxygen carrier. Here, the rates of gasification of coal were compared when gasification was undertaken in a fluidised bed of either (i) an active Fe-based oxygen carrier used for chemical looping or (ii) inert sand. This enabled an examination of the ability of chemical looping materials to enhance the rate of gasification of solid fuels. Batch gasification and chemical-looping combustion experiments with a German lignite and its char are reported, using an electrically-heated fluidised bed reactor at temperatures from 1073 to 1223 K. The fluidising gas was CO2 in nitrogen. The kinetics of the gasification were found to be significantly faster in the presence of the oxygen carrier, especially at temperatures above 1123 K. A numerical model was developed to account for external and internal mass transfer and for the effect of the looping agent. The model also included the effects of the evolution of the pore structure at different conversions. The presence of Fe2O3 led to an increase in the rate of gasification because of the rapid oxidation of CO by the oxygen carrier to CO2. This resulted in the removal of CO and maintained a higher mole fraction of CO2 in the mixture of gas around the particle of char, i.e. within the mass transfer boundary layer surrounding the particle. This effect was most prominent at about 20% conversion when (i) the surface area for reaction was at its maximum and (ii) because of the accompanying increase in porosity and pore size, intraparticle resistance to gas mass transfer within the particle of char had fallen, compared with that in the initial particle. Excellent agreement was observed between the rates predicted by the numerical model and those observed experimentally. ©2013 Elsevier Ltd. All rights reserved.

Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

We have investigated the optical properties of AlGaN grown on sapphire. It is found that two main luminescence peaks occur in the cathodoluminescence (CL) spectra of AlGaN films, and their energy separation increases with the increase of Al source flux during the growth. Spatially resolved CL investigations have shown that the line splitting is a result of variation of AlN mole fraction within the layer. The Al composition varies in both lateral and vertical direction. It is suggested that the difference in the surface mobility of Al and Ga atoms, especially, its strong influence on the initial island coalescence process and the formation of island-like regions on the uneven film surface, is responsible for the Al composition inhomogeneity. (C) 2008 Elsevier B.V. All rights reserved.

Investigations on V-defects in quaternary AlInGaN epilayers

The characteristics of V-defects in quaternary AlInGaN epilayers and their correlation with fluctuations of the In distribution are investigated. The geometric size of the V-defects is found to depend on the In composition of the alloy. The V-defects are nucleated within the AlInGaN layer and associated with threading dislocations. Line scan cathodoluminescence (CL) shows a redshift of the emission peak and an increase of the half width of the CL spectra as the electron beam approaches the apex of the V-defect. The total redshift decreases with decreasing In mole fraction in the alloy samples. Although the strain reduction may partially contribute to the CL redshift, indium segregation is suggested to be responsible for the V-defect formation and has a main influence on the respective optical properties. (C) 2004 American Institute Of Physics.

Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer

The influences of a high-temperature (HT) AlN interlayer (IL) on the phase separation in crack-free AlGaN grown on GaN have been studied. The depth-dependent cathodoluminescence (CL) spectra indicate a relatively uniform Al distribution in the growth direction, but the monochromatic CL images and the CL spectra obtained by line scan measurements reveal a lateral phase separation in AlGaN grown on relatively thick HT-AlN ILs. Moreover, when increasing the thickness of HT-AlN IL, the domain-like distribution of the AlN mole fraction in AlGaN layers is significantly enhanced through a great reduction of the domain size. The morphology of mesa-like small islands separated by V trenches in the HT-AlN IL, and the grain template formed by the coalescence of these islands during the subsequent AlGaN lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the AlGaN layer. (c) 2005 American Institute of Physics.

The effect of In content on high-density InxGa1-xAs quantum dots

We have successfully grown self-assembled InxGa1-xAs (x = 0.44, 0.47, 0.50) quantum dots (QDs) with high density (> 10(11)/cm(2)) by MBE. The effect of In content on the high-density QD is investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectra. It is found that sample with In-mole-fraction of 0.5 shows small size fluctuation and high PL intensity. The influence of growth temperature on high-density QD is also investigated in our experiment. (c) 2005 Elsevier B.V. All rights reserved.