The effect of In content on high-density InxGa1-xAs quantum dots
Data(s) |
2005
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Resumo |
We have successfully grown self-assembled InxGa1-xAs (x = 0.44, 0.47, 0.50) quantum dots (QDs) with high density (> 10(11)/cm(2)) by MBE. The effect of In content on the high-density QD is investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectra. It is found that sample with In-mole-fraction of 0.5 shows small size fluctuation and high PL intensity. The influence of growth temperature on high-density QD is also investigated in our experiment. (c) 2005 Elsevier B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Yu, LK; Xu, B; Wang, ZG; Jin, P; Zhao, C; Lei, W; Sun, J; Li, K; Hu, LJ; Liang, LY .The effect of In content on high-density InxGa1-xAs quantum dots ,JOURNAL OF CRYSTAL GROWTH,AUG 15 2005,282 (1-2):173-178 |
Palavras-Chave | #半导体材料 #high density |
Tipo |
期刊论文 |