Magnetoexciton polaritons in planar semiconductor microcavities

We study the magnetoexciton polaritons in planar semiconductors microcavities by a quantum approach developed in the strong and weak magnetic-field limits. Ht is shown that the vacuum Rabi splittings with different Landau level indices are close to each other and tend to be proportional to B at sufficiently large values of the magnetic field. Also, we show that the calculated results are in good agreement with the experimental observations. [S0163-1829(99)10215-7].

Metamorphosis of self-organized quantum dots into quantum wires

Spontaneous formation of InAs quantum wires in InAlAs on InP(001) via sequential chain-like coalescence of quantum dots along [1 (1) over bar 0] is realized. Theoretical calculations based on the energetics of interacting steps provide a qualitative explanation for the experimental results. Sequential coalescence of initially isolated dots reduces the total free energy strikingly. Thus the wire-like structure is energetically favorable. (C) 1998 Elsevier Science B.V.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.

Color center conversion by femtosecond pulse laser irradiation in LiF : F-2 crystals

We report the observation of intense spontaneous emission of green light from LiF:F-2:F-3(+) centers in active channel waveguides generated in lithium fluoride crystals by near-infrared femtosecond laser radiation. While irradiating the crystal at room temperature with 405 nm light from a laser diode, yellow and green emission was seen by the naked eye. Stripe waveguides were fabricated by translating the crystal along the irradiated laser pulse, and their guiding properties and fluorescence spectra at 540 nm demonstrated. This single-step process inducing a waveguide structure offers a good prospect for the development of a waveguide laser in bulk LiF crystals.

染料掺杂聚合物薄膜放大自发发射和受激发射的研究

随着有机／聚合物电致发光材料在有机发光二极管上的应用以及有机晶体管和有机太阳能电池的研制成功，有机／聚合物电致发光材料的优异的光电性能、低廉的生产成本、简单的加工工艺、宽广的选材范围和良好的机械性能等优点极大地吸引科学家们的研究兴趣，并开始了有机／聚合物发光薄膜的放大的自发发射和受激发射行为的研究。有机分子和聚合物的诸多如易得、廉价、结构多样、功能易调节、大的横截面积、高的荧光量子效率和低的自吸收等优点使其制成的激光器在未来光纤通讯领域中呈现了诱人的应用前景。新的有机激光材料不断涌现、器件结构不断推陈出新、新的激发原理不断提出并得到修正已经成为有机／聚合物固体激光研究领域的三大特点。本论文以研究有机材料的激光特性为目的，通过对有机染料DCJTB和三芳胺取代1，8-蔡酰亚胺齐聚物掺杂聚合物薄膜的放大的自发发射和受激发射特性的研究，探讨实现低闭值、高增益光泵浦有机聚合物激光的方法及影响器件性能的因素，阐明放大自发发射的工作机制，为进一步探讨电泵浦有机聚合物激光器提供材料体系和理论依据。1、研究了DCJTB掺杂聚合物薄膜的放大自发发射特性，分析了光泵浦条件下光谱窄化的放大自发发射机制，对ASE增益和损耗进行了讨论和数值拟合，并对增益方程进行了饱和修正。DCJTB：PS薄膜具有较低的闺值（0．16mJ·Pulse~(_1)·cm-2）、高的增益系数（40．72cm-1）、低的损耗值2．49cm一l和高的荧光量子效率（70．4％），其波导增益的波长分布呈明显的洛仑兹分布，增益饱和是均匀展宽的。与DCM比较发现，自由体积是决定材料性能的重要因素，大的自由体积有利于实现低闭值、高增益。我们的研究结果表明，DCJTB是非常好的激光介质材料。2、从ASE的发射波长、ASE闭值、增益和损耗四个技术指标出发，详细研究了激发光波长、聚合物基体、旋涂速度及基片等对DCJTB：PS薄膜放大自发发射（ASE）的影响，短的激发波长和合适的基体材料可以显著地降低闭值和提高增益，薄膜厚度和基片也对ASE性能有很大影响。利用琢lord镜面体系，研究了DCJTB染料掺杂相列向液晶体系的分布反馈激光特性，在电场作用下，可以有效地对TE、TM两种模式的输出强度进行调解。3、把电子传输／发光有机小分子材料Alq3掺杂到DCJTB和C545T掺杂聚合物薄膜，研究了它们的放大自发发射特性。通过在不同激发光波长激发下不同Alq3掺杂浓度对ASE性能影响的研究，发现掺杂Alq3显著地降低了闭值，增加了增益和减小了损耗。由于Alq3是一种良好的半导体有机发光材料，Alq3的引入对电泵浦有机聚合物激光器的研究具有重要的意义。4、研究了三种在4位氨基位置引入不同三芳胺功能基团的红光1，8-蔡酞亚胺齐聚物的放大自发发射特性，研究结果表明，三芳胺取代1，8蔡酞亚胺齐聚物具有低阂值、高增益和低损耗的特点，显示了较小的浓度淬灭效应，即使掺杂浓度高到60％仍可以观察到放大的自发发射现象，表明三芳胺取代1，8茶酞亚胺是一类非常有应用前景的有机半导体激光材料体系。

海南长臂猿(Nomascus hainanus)生境变化与潜在适宜生境研究

海南长臂猿(Nomascus hainanus)是世界上最濒危的灵长类之一，曾经广泛分 布于海南岛的低海拔地区，但现已濒临灭绝；生境变化被认为是它的主要致危因 素之一。为了探讨过去十多年中它们的生境变化原因和变化趋势，并在整个海南 岛内寻找它们的潜在生境，为制订保护计划提供帮助，我们利用遥感和地理信息 系统技术对海南长臂猿的生境状况进行了分析。海南长臂猿的高质量生境是成熟 的山地雨林和沟谷雨林，根据卫星遥感影像的识别能力，我们把成熟林定义为海 南长臂猿的适宜生境，通过对1991 年和2001 年拍摄的Landsat 卫星影像的解译， 我们分析比较了海南岛林地在这十年内的变化情况；通过这两个时期成熟林不同 大小斑块数量与面积的比较，以及成熟林平均斑块面积、斑块密度、斑块之间的 最近距离平均值、最大斑块所占面积等四个破碎化参数的计算，分析了海南长臂 猿高质量生境十年来的生境破碎化趋势；还对不同海拔带的人工林、天然林以及 成熟林的变化情况进行了比较；进而通过海南岛林地变化与社会和经济因素相关 性分析对海南长臂猿生境变化的原因进行了探讨。 结果显示，海南岛的成熟林面积由1991 年的157,927 hm2 减少到2001 年的 107,597 hm2，降低了32％；大小分别为10 hm2、25 hm2、50 hm2、100 hm2、200 hm2 的成熟林斑块的面积和数量都有所下降，并且自然保护区外的下降程度比自 然保护区内严重，省级自然保护区的下降程度比国家级自然保护区的严重。海南 岛现存最大的成熟林斑块位于鹦哥岭省级自然保护区。在这十年中，成熟林破碎 化程度加重，具体表现为平均斑块面积减少、斑块密度增加、斑块之间最近距离 平均值减小、最大斑块所占面积减少。在0-800 m 海拔带上，成熟林的下降比率 达到了36％，在这个海拔带上的人工林面积已远远大于天然林，在800-1400 m 海拔带上，成熟林的下降比率为23％，天然林的面积大于人工林。统计分析显 示当地的农业人口和农业总产值与成熟林的面积呈显著负相关(R =-0.534 P＜ 0.01；R =-0.512 P＜0.01)，同时农业人口与人工林和耕地面积呈显著正相关(R =0.611 P＜0.05；R =0.759, P＜0.05)，这说明成熟林下降与人口增长带来的耕地 扩张以及为了追求经济增长而大量种植人工林密切相关。而海南长臂猿曾经广泛分布在低海拔地区，这一带上大面积的生境丧失使它们的种群在短期内濒临灭 绝。 为了对未来海南长臂猿的生境保护和种群恢复提供帮助，我们利用地理信息 系统Arcgis 软件分析了海南长臂猿2001 年的生境空间分布格局，以成熟林的面 积和距离为指标预测了海南长臂猿的潜在适宜生境。结果显示，至2001 年，海 南岛除了白马岭、南高岭、抱龙、俄贤岭四个地方外，长臂猿的适宜生境多半分 布于自然保护区内；海南长臂猿目前唯一的分布地位于昌江县和白沙县交界的坝 王岭自然保护区，并且只活动于核心区内的一小块地区，此处有两段公路在使用 中，对海南长臂猿的保护不利。 根据上述研究结果，我们建议政府采取措施严格控制海南长臂猿潜在适宜生 境分布地的人口增长，切实执行天然林保护法，并设法恢复低海拔地带的天然植 被。建议在白马岭、南高岭、抱龙、俄贤岭建立四个新的自然保护区，把鹦哥岭 自然保护区从省级提升到国家级。在坝王岭自然保护区的低海拔地带种植本土速 生树种，将海南长臂猿活动区周围的小斑块与大斑块连接到一起，并设法消除该 保护区内两段公路对海南长臂猿的较大负面影响，提高海南长臂猿的生境质量并 扩大其活动范围。同时在自然保护区周边社区大力开展环境保护教育，努力使当 地人可以从生态系统保护中受益。

1. 大鼠海马-前额叶回路在学习记忆中的作用2. 芬克罗酮改善恒河猴空间工作记忆的谷氨酸机制

一、大鼠海马-前额叶回路在学习记忆中的作用 解剖学研究证实大鼠和猴的海马结构（hippocampal formation, HF；本文‘海马 (hippocampus, Hip)’一词即指海马结构）和前额叶 (prefrontal cortex, PFC) 之间存在一条单向、同侧和单突触的神经回路，即海马-前额叶回路（Hip-PFC回路）。Hip和PFC均参与学习记忆等多种认知功能，PFC是工作记忆的关键脑区，而Hip是空间参考记忆的关键脑区。虽然人们已经对PFC和Hip进行了广泛深入的研究，但对Hip-PFC回路参与哪些认知功能还知之甚少。本研究的目的就是通过暂时阻断Hip-PFC回路，探讨其在学习和记忆中的作用。 在大鼠，Hip-PFC回路中的纤维主要从Hip腹部 (ventral hippocampus, VH)发出，投射到PFC的前边缘皮质(prelimbic cortex, PLC)、下边缘皮质 (infralimbic cortex, ILC) 和外侧前额叶 (lateral prefrontal cortex) 等亚区，其中PLC是Hip-PFC主要投射的区域。我们通过给动物安装慢性导管向脑内注射GABAA受体激动剂muscimol (MU) 阻断Hip-PFC回路。注射位点包括 ①双侧PLC，②双侧VH，③一侧VH和对侧PLC (VH-PLC)。我们首先观察了在PLC或VH局部注射MU对自由活动大鼠PLC和VH脑电功率的影响，并以此确定在行为实验中所用蝇蕈醇的剂量。然后采用T-迷宫空间交互延缓作业 (spatial delayed alternation task) 测试Hip-PFC回路被阻断的动物的空间工作记忆功能；采用被动回避作业 (passive avoidance task) 测试其情绪相关记忆的能力（训练前给药；24 h后重测试）；采用Morris水迷宫作业 (Morris water maze task) 测试其空间参考记忆的能力（每天训练前给药；训练期（3 d）结束24 h后重测试）。结果表明：在大鼠PLC或VH局部注射0.5 μg/0.25μl MU后30 min显著抑制VH 和PLC的脑电功率 (VH, p < 0.01; PLC, p < 0.05 vs. PBS/baseline)。注射MU (0.5 μg/0.25μl) 到 ①双侧PLC、②双侧VH、③VH-PLC均显著降低动物在空间交互延缓作业 (All p < 0.001, vs. PBS) 和空间Morris水迷宫作业中的成绩 (All p < 0.05, vs. PBS)，表明Hip-PFC回路在空间工作记忆（空间短时记忆）和在空间参考记忆（空间长时记忆）中均起重要作用。在空间交互延缓作业中，双侧PLC被抑制的大鼠的成绩显著低于双侧VH或VH-PLC被抑制的动物，说明PFC在空间工作记忆功能中占有主导地位。在被动回避作业中，双侧VH被抑制动物的回避反应的潜伏期显著短于对照动物 (p < 0.05 vs. PBS)，说明双侧VH被抑制动物的情绪记忆受损；而双侧PLC或VH-PLC被抑制的动物其回避反应的潜伏期与对照动物无显著差异 (PLC, p > 0.9; VH-PLC, p > 0.3 vs. PBS)，表明双侧PLC或VH-PLC被抑制的动物情绪记忆正常。被动回避作业的结果说明VH参与情绪记忆的形成，但Hip-PFC回路在情绪记忆形成中不起重要作用。 以上结果表明，大鼠Hip-PFC回路参与空间工作记忆和空间参考记忆而不是情绪记忆功能。情绪记忆的关键脑结构是杏仁复合体 (amygdala complex, AMC)，VH与AMC有密切的纤维联系。VH被抑制的大鼠情绪记忆受损，说明情绪记忆可能与AMC-Hip回路有关。情绪记忆与空间记忆（参考记忆和工作记忆）在解剖上的分离说明，对于不同类型的记忆来说，其在脑内的信息加工过程是并行的。神经回路内部的信息加工过程则是串行的，回路上任何一个结构的破坏均可导致回路功能的损伤。本研究的结果为学习记忆的“多重记忆系统”理论和记忆信息加工的串行并行机制提供了新的实验证据。 二、芬克罗酮改善成年恒河猴空间工作记忆的谷氨酸机制 芬克罗酮是中科院昆明植物所郝小江等合成的取代吡咯烷酮类化合物。中科院昆明动物所蔡景霞等发现芬克罗酮能改善东莨菪碱、育亨宾等导致的多种动物的不同类型的学习记忆障碍，提高老年动物的学习记忆能力，尤其是老年猴的空间工作记忆。已证实芬克罗酮为部分钙激动剂，可使脑缺血沙土鼠脑内升高的谷氨酸降低，而使正常的沙土鼠海马胞外谷氨酸释放增加。那么芬克罗酮能否提高正常动物的学习记忆，其对正常动物学习记忆的提高是否与其增加谷氨酸的释放有关？本研究采用空间延缓反应作业和谷氨酸NMDA受体拮抗剂MK-801在正常成年猴恒河猴上探讨了以上问题。 结果表明，口服芬克罗酮可显著提高成年猴的空间工作记忆，其量效曲线呈倒‘U’形，符合许多促智药的量效特点。0.25 mg/kg和0.5 mg/kg为芬克罗酮的最佳有效剂量 (p < 0.05 vs. 安慰剂)。肌注MK-801 (0.1 mg/kg) 显著降低成年猴的空间工作记忆 (p < 0.01 vs. 安慰剂)，而口服2.0 mg/kg和4.0 mg/kg的芬克罗酮则显著改善MK-801导致的工作记忆障碍 (p < 0.05 vs. MK-801)。芬克罗酮的所有测试剂量不影响猴在作业中的反应时 (p > 0.05 vs. 安慰剂)，表明芬克罗酮在该剂量范围不影响动物的运动能力。 本研究结果提示，芬克罗酮可能通钙激动作用促进谷氨酸的释放，在一定剂量范围内提高胞外谷氨酸水平，提高正常动物的空间工作记忆等认知功能。 关键词：芬克罗酮，恒河猴，空间工作记忆，空间延缓反应作业，谷氨酸，MK-801

Deviation from the stoichiometric composition of single-crystal 'Er2Co17'

The deviation from the stoichiometric composition of single-crystal 'Er2Co17' has been determined by theoretical analysis. It is found that the composition of this single-crystal 'Er2Co17' is rich in cobalt, and its real composition is suggested to be Er2-deltaCo17+2 delta (delta = 0.14) on the basis of a comparison of calculations based on the single-ion model with a series of experiments. The values of the Er-Co exchange field H-ex and the crystalline-electric-field (CEF) parameters A(n)(m) at the rare-earth (R) site in the 'Er2Co17' compound are also evaluated at the same time. The experiments provide the following data: the temperature dependence of the spontaneous magnetization of the compounds and the normalized magnetic moment of the Er ion, the magnetization curves dong the crystallographic axes at 4.2 K and 200 K, and the temperature dependence of the magnetization along the crystallographic axes in a field of 4 T.

Far-field and beam characteristics of vertical-cavity surface-emitting lasers

We have determined the far-field patterns and beam parameters of vertical-cavity surface-emitting lasers (VCSELs) with different structures. The results show that the window diameter and the active-layer aperture of VCSELs strongly influence laser far-field distributions and beam characteristics; for VCSELs with small window omega=5 mu m, only one dominant lobe has been observed in the far-field profiles, even though injected current was increased up to 2 Ith; and the smaller the ratio of the window diameter to the active-layer aperture, the larger is the far-field divergence. The laser structure dependence of the K factor has also been studied. (C) 1996 American Institute of Physics.

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

Photoluminescence measurements on erbium-doped silicon

Erbium-implanted silicones were treated by lamp-heating rapid thermal annealing (RTA). Two types of erbium-related photoluminescence spectra appear under different anneal temperatures. 750 degrees C annealing optimizes the luminescence intensity, which does not change with anneal time. Exciton-mediated energy transfer model in erbium-doped silicon was presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er3+ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium-bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6.6 meV and 47.4 meV respectively.