Novel Pentameric Structure of the Diarrhea-Inducing Region of the Rotavirus Enterotoxigenic Protein NSP4

A novel pentameric structure which differs from the previously reported tetrameric form of the diarrhea-inducing region of the rotavirus enterotoxin NSP4 is reported here. A significant feature of this pentameric form is the absence of the calcium ion located in the core region of the tetrameric structures. The lysis of cells, the crystallization of the region spanning residues 95 to 146 of NSP4 (NSP4(95-146)) of strain ST3 (ST3: NSP4(95-146)) at acidic pH, and comparative studies of the recombinant purified peptide under different conditions by size-exclusion chromatography (SEC) and of the crystal structures suggested pH-, Ca(2+)-, and protein concentration-dependent oligomeric transitions in the peptide. Since the NSP4(95-146) mutant lacks the N-terminal amphipathic domain (AD) and most of the C-terminal flexible region (FR), to demonstrate that the pentameric transition is not a consequence of the lack of the N- and C-terminal regions, glutaraldehyde cross-linking of the Delta N72 and Delta N94 mutant proteins, which contain or lack the AD, respectively, but possess the complete C-terminal FR, was carried out. The results indicate the presence of pentamers in preparations of these longer mutants. Detailed SEC analyses of Delta N94 prepared under different conditions, however, revealed protein concentration-dependent but metal ion-and pH-independent pentamer accumulation at high concentrations which dissociated into tetramers and lower oligomers at low protein concentrations. While calcium appeared to stabilize the tetramer, magnesium in particular stabilized the dimer. Delta N72 existed primarily in the multimeric form under all conditions. These findings of a calcium-free NSP4 pentamer and its concentration-dependent and largely calcium-independent oligomeric transitions open up a new dimension in an understanding of the structural basis of its multitude of functions.

Multilevel inverters for low-power application

Multilevel inverters are an attractive solution in the medium-voltage and high-power applications. However in the low-power range also it can be a better solution compared to two-level inverters, if MOSFETs are used as devices switching in the order of 100 kHz. The effect of clamping diodes in the diode-clamped multilevel inverters play an important role in determining its efficiency. Power loss introduced by the reverse recovery of MOSFET body diode prohibits the use of MOSFET in hard-switched inverter legs. A technique of avoiding reverse recovery loss of MOSFET body diode in a three-level neutral point clamped inverter is suggested. The use of multilevel inverters topology enables operation at high switching frequency without sacrificing efficiency. High switching frequency of operation reduces the output filter requirement, which in turn helps in reducing the size of the inverter. This study elaborates the trade-off analysis to quantify the suitability of multilevel inverters in the low-power applications. Advantages of using a MOSFET-based three-level diode-clamped inverter for a PM motor drive and UPS systems are discussed.

A Low ML-Decoding Complexity, Full-Diversity, Full-Rate MIMO Precoder

Precoding for multiple-input multiple-output (MIMO) antenna systems is considered with perfect channel knowledge available at both the transmitter and the receiver. For two transmit antennas and QAM constellations, a real-valued precoder which is approximately optimal (with respect to the minimum Euclidean distance between points in the received signal space) among real-valued precoders based on the singular value decomposition (SVD) of the channel is proposed. The proposed precoder is obtainable easily for arbitrary QAM constellations, unlike the known complex-valued optimal precoder by Collin et al. for two transmit antennas which is in existence for 4-QAM alone and is extremely hard to obtain for larger QAM constellations. The proposed precoding scheme is extended to higher number of transmit antennas on the lines of the E - d(min) precoder for 4-QAM by Vrigneau et al. which is an extension of the complex-valued optimal precoder for 4-QAM. The proposed precoder's ML-decoding complexity as a function of the constellation size M is only O(root M)while that of the E - d(min) precoder is O(M root M)(M = 4). Compared to the recently proposed X- and Y-precoders, the error performance of the proposed precoder is significantly better while being only marginally worse than that of the E - d(min) precoder for 4-QAM. It is argued that the proposed precoder provides full-diversity for QAM constellations and this is supported by simulation plots of the word error probability for 2 x 2, 4 x 4 and 8 x 8 systems.

A low cost approach for the fabrication of microwave phase shifter on laminates

This paper presents a simple and low cost fabrication approach using extended printed circuit board processing techniques for an electrostatically actuated phase shifter on a common microwave laminate. This approach uses 15 mu m thin copper foils for realizing the bridge structures as well as for a spacer. A polymeric thin film deposited by spin coating and patterned using lithographic process is used as a dielectric layer to improve the reliability of the device. The prototype of the phase shifter for X-band operation is fabricated and tested for electrical and electromechanical performance parameters. The realized devices have a figure of merit of 70 degrees/dB for a maximum applied bias potential of 85 V. Since these phase shifters can be conveniently fabricated directly on microwave substrates used for feed distribution networks of phased arrays, the overall addition in cost, dimensions and processing for including these phase shifters in these arrays is minimal.

Design of compact low pass filter with wide stop band using tri-section stepped impedance resonator

This paper reports the design of a compact low pass filter (LPF) with wide stop band region using trisection stepped impedance resonators in microstrip medium. Experimental results of a low pass filter designed at 1 GHz have been compared against the analytical and EM simulation results for the validation of the design. Results are satisfactorily matching each other. The maximum insertion of the measured filter is 0.2 dB and minimum return loss is 13.5 dB over the pass band. The stop band rejection is better than 20 dB from 1.5 GHz to 4.2 GHz and hence wide stop band performance is achieved. Overall size of the filter is 30 mm x 20 mm x 0.78 mm which is 0.1 lambda x 0.066 lambda. x 0.0026 lambda at 1 GHz. (C) 2011 Elsevier GmbH. All rights reserved.

Low oxygen potential boundary for the stability of YBA2Cu3O7−δ

On lowering the oxygen potential, the tetragonal phase of YBa2Cu3O7−δ was found to decompose into a mixture of Y2BaCuO5, BaCuO2 and BaCu2O2 in the temperature range 773–1173 K. The 123 compound was contained in a closed crucible of yttria-stabilized zirconia in the temperature range 773–1073 K. Oxygen was removed in small increments by coulometric titration through the solid electrolyte crucible at constant temperature. The oxygen potential was calculated from the open circuit e.m.f. of the solid state cell after successive titrations. Pure oxygen at a pressure of 1.01 × 105 Pa was used as the reference electrode. The decomposition of the 123 compound manifested as a plateau in oxygen potential. The decomposition products were identified by X-ray diffraction. At temperatures above 1073 K there was some evidence of reaction between the 123 compound, solid electrolyte crucible and platinum. For measurements above 1073 K, the 123 compound was contained in a magnesia crucible placed in a closed outer silica tube. The oxygen potential in the gas phase above the 123 compound was controlled and measured by a solid state cell based on yttria-stabilized zirconia which served both as a pump and sensor. The lower oxygen potential limit for the stability of the 123 compound is given by View the MathML source The oxygen non-stoichiometric parameter δ for the 123 compound has a value of 0.98 (View the MathML source) at dissociation.

Low‐voltage varistors based on zinc antimony spinel Zn7Sb2O12

It is possible to prepare low‐voltage varistors from the zinc antimony spinel Zn7Sb2O12 with breakdown voltages in the range of 3–20 V and nonlinearity coefficient α=7–15. The varistor property is due to the formation of high ohmic potential barriers at the grain boundary regions on low‐ohmic n‐type grain interiors of the polycrystalline samples. The method of preparation of the spinel, synthesized by coprecipitation followed by annealing under restricted partial pressures of oxygen, controls the mixed valence states for antimony, namely, Sb3+ and Sb5+. This is critical in attaining high nonlinearity and lower breakdown voltages.

A mostly-digital analog scan-out chain for low bandwidth voltage measurement for analog IP test

A method of precise measurement of on-chip analog voltages in a mostly-digital manner, with minimal overhead, is presented. A pair of clock signals is routed to the node of an analog voltage. This analog voltage controls the delay between this pair of clock signals, which is then measured in an all-digital manner using the technique of sub-sampling. This sub-sampling technique, having measurement time and accuracy trade-off, is well suited for low bandwidth signals. This concept is validated by designing delay cells, using current starved inverters in UMC 130nm CMOS process. Sub-mV accuracy is demonstrated for a measurement time of few seconds.

Low ML Decoding Complexity STBCs via Codes Over the Klein Group

In this paper, we give a new framework for constructing low ML decoding complexity space-time block codes (STBCs) using codes over the Klein group K. Almost all known low ML decoding complexity STBCs can be obtained via this approach. New full- diversity STBCs with low ML decoding complexity and cubic shaping property are constructed, via codes over K, for number of transmit antennas N = 2(m), m >= 1, and rates R > 1 complex symbols per channel use. When R = N, the new STBCs are information- lossless as well. The new class of STBCs have the least knownML decoding complexity among all the codes available in the literature for a large set of (N, R) pairs.

Low loss and frequency (1 kHz–1 MHz) independent dielectric characteristics of 3BaO–3TiO2–B2O3 glasses

X-ray powder diffraction along with differential thermal analysis carried out on the as-quenched samples in the 3BaO–3TiO2–B2O3 system confirmed their amorphous and glassy nature, respectively. The dielectric constants in the 1 kHz–1 MHz frequency range were measured as a function of temperature (323–748 K). The dielectric constant and loss were found to be frequency independent in the 323–473 K temperature range. The temperature coefficient of dielectric constant was estimated using Havinga’s formula and found to be 16 ppm K−1. The electrical relaxation was rationalized using the electric modulus formalism. The dielectric constant and loss were 17±0.5 and 0.005±0.001, respectively at 323 K in the 1 kHz–1 MHz frequency range which may be of considerable interest to capacitor industry.

Dielectric response of BaZrO3/BaTiO3 and SrTiO3/BaZrO3 superlattices

Dielectric materials with high tunability, low loss, and desired range of permittivity are an attractive class of materials for a variety of applications in microwave components such as tunable filters, phase shifters, antennas, etc. In this article, we have investigated the low frequency dielectric properties of BaZrO3/BaTiO3 and SrTiO3/BaZrO3 superlattices of varying modulation periods for the potential application toward electrically tunable devices. The dielectric response of the superlattices as a function of temperature revealed remarkable stability for both types of superlattices, with no observed dielectric anomalies within that range. Dielectric losses were also nominally low with minimal variation within the measured temperature range. Sufficiently high tunability of ∼ 40% was observed for the BaZrO3/BaTiO3 superlattices at the lowest individual layer thicknesses. In comparison, the SrTiO3/BaZrO3 superlattices showed a minimum tunability for lowest period structures. It showed maximum tunability of ∼ 20% at 10 kHz and room temperature at an intermediate dimension of 3.85 nm periodicity superlattice. The tunability value degraded with increasing as well as decreasing periodicities for the SrTiO3/BaZrO3 superlattices. The dielectric response has been explained on the basis of size effects, interlayer coupling between dissimilar materials, domain contribution, and depolarizing electric fields.

Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)

Structural and electrical properties of Eu2O3 films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity Eu1−xO phase, which has been removed upon annealing in O2 ambient. Film’s morphology comprises uniform spherical mounds (40–60 nm). Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of −1.5×1011 to −6.0×1010 cm−2 and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed.

Elerctron Transport Coefficients in N2 in Crossed Fields at Low E/p

The numerical solutions of Boltzmann transpott equation for the energy distribution of electrons moving in crossed fields in nitrogen have been obtained for 100 ÿ E/p ÿ 1000 V M-1 Torr-1 and for 0ÿ B/p ÿ 0.02 Tesla Torr-1 using the concept of energy dependent effective field intensity. From the derived distribution functions the electron mean energy, the tranaverse and perpendicular drift velocities and the averaged effective field intensity (Eavef) which signifies the average field intensity experienced by electron swarms in E àB field have been derived. The maximum difference between the electron mean energy for a given E ÃÂB field and that corresponding to Eavef/p (p is the gas pressure) is found to be within ñ3.5%.

Low Voltage Firing Characteristics of a Simple Triggered Vacuum Gap

The firing characteristics of the simple triggered vacuum gap (TVG) using lead zirconate titanate as dielectric material in the triggered gap are described. This TVG has a long life of about 2000 firings without appreciable deterioration of the electrical properties for main discharge currents upto 3 kA and is much superior to these made with Supramica (Mycalex Corporation of America) and silicon carbide as used in our earlier investigations. The effects of the variation of trigger voltage, trigger curcit, trigger pulse duration, trigger pulse energy, main gap voltage, main gap separation and main circuit energy on the firing characteristics have been studied. Trigger resistance progressively decreases with the number of firings of the trigger gap and as well as of the main gap. This decrease in the trigger resistance is more pronounced for main discharge currents exceeding 10 kA. The minimum trigger current required for reliable firing decreases with increase of trigger voltage upto a threshold value of 1.2 kV and there-onwards saturates at 3.0 A. This value is less than that obtained with Supramica as dielectric material. One hundred percent firing probability of the TVG at main gap voltages as low as 50 V is possible and this low voltage breakdown of the main gap appears to be similar to the breakdown at low pressures between moving plasma by other workers. and the cold electrodes immersed in it, as reported.