Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)
Data(s) |
2006
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Resumo |
Structural and electrical properties of Eu2O3 films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity Eu1−xO phase, which has been removed upon annealing in O2 ambient. Film’s morphology comprises uniform spherical mounds (40–60 nm). Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of −1.5×1011 to −6.0×1010 cm−2 and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/43023/1/Structural_and_electrical.pdf Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N (2006) Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100). In: Applied Physics Letters, 89 (20). 201901 -201901. |
Publicador |
American Institute of Physics |
Relação |
http://apl.aip.org/resource/1/applab/v89/i20/p201901_s1 http://eprints.iisc.ernet.in/43023/ |
Palavras-Chave | #Materials Research Centre #Electrical Communication Engineering |
Tipo |
Journal Article PeerReviewed |