A low power consumption thermo-optic variable optical attenuator based on SOI material

A SOI thenno-optic variable optical attenuator with U-grooves based on a multimode interference coupler principle is fabricated. The dynamic attenuation range is 0 to 29 dB; at the wavelength range between 1510 nm and 1610nm, and the maximum power consumption is only l30mW. Compared to the variable optical attenuator without U-groove, the maximum power consumption decreases more than 230mW

The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices

During the packaging of optoelectrome device, a problem always met is the instability of output power. The main effect causing this problem, Fabry-Perot interference, is discussed in this paper. Both theoretical analysis and experimental test are carried out and in good agreement. As an example of avoiding the disadvantage of Fabry-Perot interference, the packaging process of Silicon-on-Insulator (SOI) based Variable Optical Attenuator(VOA) is shown at last.

Improved diphasic nc-si/a-si : H I-layer materials using PECVD

Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( LT) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (AM 1.5, 100 mW/cm(2)).

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

Quality ZnO films were successfully grown on Si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of ZnO films were characterized by X-ray diffraction, optical refection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.

A novel low-power input-independent MOS AC/DC charge pump

This paper presents a novel fully integrated MOS AC to DC charge pump with low power dissipation and stable output for RFID applications. To improve the input sensitivity, we replaced Schottky-diodes in conventional charge pumps with MOS diodes with zero threshold, which has less process defects and is thus more compatible with other circuits. The charge pump in a RFID transponder is implemented in a 0.35um CMOS technology with 0.24 sq mm die size. The analytical model of the charge pump and the simulation results are presented.

An Accurate and Fast Behavioral Model for PLL Frequency Synthesizer Phase Noise/Spurs Prediction

This paper presents a behavior model for PLL Frequency Synthesizer. All the noise sources are modeled with noise voltages or currents in time-domain. An accurate VCO noise model is introduced, including both thermal noise and 1/f noise. The behavioral model can be co-simulated with transistor level circuits with fast speed and provides more accurate phase noise and spurs prediction. Comparison shows that simulation results match very well with measurement results.

An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags

An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. In the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. An ultra low power 192-bit memory with a register array is implemented in a 0.18 mu M standard CMOS process. The measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780KHz, the current consumption of the memory is 1.8 mu A (3.6 mu A) at the read (write) rate of 1.3Mb/s (0.8Kb/s).

A Smart Frequency Presetting Technique for Fast Lock-in LC-PLL Frequency Synthesizer

This paper proposes a smart frequency presetting technique for fast lock-in LC-PLL frequency synthesizer. The technique accurately presets the frequency of VCO with small initial frequency error and greatly reduces the lock-in time. It can automatically compensate preset frequency variation with process and temperature. A 2.4GHz synthesizer with 1MHz reference input was implemented in 0.35 mu m CMOS process. The chip core area is 0.4mm(2). Output frequency of VCO ranges from 2390 to 2600MHz. The measured results show that the typical lock-in time is 3 mu s. The phase noise is -112dBc/Hz at 600KHz offset from center frequency. The test chip consumes current of 22mA that includes the consumption of the I/O buffers.

The design structure system - A method for managing the design of complex systems

Systems design involves the determination of interdependent variables. Thus the precedence ordering for the tasks of determining these variables involves circuits. Circuits require planning decisions abut how to iterate and where to use estimates. Conventional planning techniques, such as critical path, do not deal with these problems. Techniques are shown in this paper which acknowledge these circuits in the design of systems. These techniques can be used to develop an effective engineering plan, showing where estimates are to be used, how design iterations and reviews are handled, and how information flows during the design work.

基因电路研究综述

基因网络相关的研究是生物信息学的重要研究领域．基因电路方法是目前基因网络研究的一种重要方法，本文从以下角度介绍基因电路研究的进展情况及相关研究成果；构成基因电路的基本模块；基因电路的设计与实现；人工基因电路的应用．

Steady-state bright-dark vector spatial solitons in biased photorefractive-photovoltaic crystals

We show that bright-dark vector solitons are possible in biased photorefractive-photovoltaic crystals under steady-state conditions, which result from both the bulk photovoltaic effect and the spatially nonuniform screening of the external bias field. The analytical solutions of these vector solitons can be obtained in the case of \sigma\ much less than 1, where sigma is the parameter controlling the intensities of the two optical beams. In the limit of -1 < sigma much less than 1, these vector solitons can also be determined by use of simple numerical integration procedures. When the bulk photovoltaic effect is neglectable, these vector solitons are bright-dark vector screening solitons studied previously in the \sigma\ much less than 1 regime, and predict bright-dark vector screening solitons in the -1 < sigma less than or equal to 1 regime. When the external bias field is absent, these vector solitons predict bright-dark vector photovoltaic solitons in closed and open circuits. (C) 2002 Elsevier Science B.V. All rights reserved.

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.

Grey screening-photovoltaic soliton-induced waveguides

This paper shows that waveguides induced by grey screening-photovoltaic solitons are always single mode for all intensity ratios, which are the ratio between the peak intensity of the soliton and the dark irradiance. It finds that the confined energy near the centre of the grey soliton and the propagation constant of the guided mode increase monotonically with increasing intensity ratio. On the other hand, when the soliton greyness increases, the confined energy near the centre of the grey soliton and the propagation constant of the guided mode reduce monotonically. When the bulk photovoltaic effect is neglected for short circuits, these waveguides become waveguides induced by grey screening solitons. When the external bias field is absent, these waveguides become waveguides induced by grey photovoltaic solitons.

1. 大鼠海马-前额叶回路在学习记忆中的作用2. 芬克罗酮改善恒河猴空间工作记忆的谷氨酸机制

一、大鼠海马-前额叶回路在学习记忆中的作用 解剖学研究证实大鼠和猴的海马结构（hippocampal formation, HF；本文‘海马 (hippocampus, Hip)’一词即指海马结构）和前额叶 (prefrontal cortex, PFC) 之间存在一条单向、同侧和单突触的神经回路，即海马-前额叶回路（Hip-PFC回路）。Hip和PFC均参与学习记忆等多种认知功能，PFC是工作记忆的关键脑区，而Hip是空间参考记忆的关键脑区。虽然人们已经对PFC和Hip进行了广泛深入的研究，但对Hip-PFC回路参与哪些认知功能还知之甚少。本研究的目的就是通过暂时阻断Hip-PFC回路，探讨其在学习和记忆中的作用。 在大鼠，Hip-PFC回路中的纤维主要从Hip腹部 (ventral hippocampus, VH)发出，投射到PFC的前边缘皮质(prelimbic cortex, PLC)、下边缘皮质 (infralimbic cortex, ILC) 和外侧前额叶 (lateral prefrontal cortex) 等亚区，其中PLC是Hip-PFC主要投射的区域。我们通过给动物安装慢性导管向脑内注射GABAA受体激动剂muscimol (MU) 阻断Hip-PFC回路。注射位点包括 ①双侧PLC，②双侧VH，③一侧VH和对侧PLC (VH-PLC)。我们首先观察了在PLC或VH局部注射MU对自由活动大鼠PLC和VH脑电功率的影响，并以此确定在行为实验中所用蝇蕈醇的剂量。然后采用T-迷宫空间交互延缓作业 (spatial delayed alternation task) 测试Hip-PFC回路被阻断的动物的空间工作记忆功能；采用被动回避作业 (passive avoidance task) 测试其情绪相关记忆的能力（训练前给药；24 h后重测试）；采用Morris水迷宫作业 (Morris water maze task) 测试其空间参考记忆的能力（每天训练前给药；训练期（3 d）结束24 h后重测试）。结果表明：在大鼠PLC或VH局部注射0.5 μg/0.25μl MU后30 min显著抑制VH 和PLC的脑电功率 (VH, p < 0.01; PLC, p < 0.05 vs. PBS/baseline)。注射MU (0.5 μg/0.25μl) 到 ①双侧PLC、②双侧VH、③VH-PLC均显著降低动物在空间交互延缓作业 (All p < 0.001, vs. PBS) 和空间Morris水迷宫作业中的成绩 (All p < 0.05, vs. PBS)，表明Hip-PFC回路在空间工作记忆（空间短时记忆）和在空间参考记忆（空间长时记忆）中均起重要作用。在空间交互延缓作业中，双侧PLC被抑制的大鼠的成绩显著低于双侧VH或VH-PLC被抑制的动物，说明PFC在空间工作记忆功能中占有主导地位。在被动回避作业中，双侧VH被抑制动物的回避反应的潜伏期显著短于对照动物 (p < 0.05 vs. PBS)，说明双侧VH被抑制动物的情绪记忆受损；而双侧PLC或VH-PLC被抑制的动物其回避反应的潜伏期与对照动物无显著差异 (PLC, p > 0.9; VH-PLC, p > 0.3 vs. PBS)，表明双侧PLC或VH-PLC被抑制的动物情绪记忆正常。被动回避作业的结果说明VH参与情绪记忆的形成，但Hip-PFC回路在情绪记忆形成中不起重要作用。 以上结果表明，大鼠Hip-PFC回路参与空间工作记忆和空间参考记忆而不是情绪记忆功能。情绪记忆的关键脑结构是杏仁复合体 (amygdala complex, AMC)，VH与AMC有密切的纤维联系。VH被抑制的大鼠情绪记忆受损，说明情绪记忆可能与AMC-Hip回路有关。情绪记忆与空间记忆（参考记忆和工作记忆）在解剖上的分离说明，对于不同类型的记忆来说，其在脑内的信息加工过程是并行的。神经回路内部的信息加工过程则是串行的，回路上任何一个结构的破坏均可导致回路功能的损伤。本研究的结果为学习记忆的“多重记忆系统”理论和记忆信息加工的串行并行机制提供了新的实验证据。 二、芬克罗酮改善成年恒河猴空间工作记忆的谷氨酸机制 芬克罗酮是中科院昆明植物所郝小江等合成的取代吡咯烷酮类化合物。中科院昆明动物所蔡景霞等发现芬克罗酮能改善东莨菪碱、育亨宾等导致的多种动物的不同类型的学习记忆障碍，提高老年动物的学习记忆能力，尤其是老年猴的空间工作记忆。已证实芬克罗酮为部分钙激动剂，可使脑缺血沙土鼠脑内升高的谷氨酸降低，而使正常的沙土鼠海马胞外谷氨酸释放增加。那么芬克罗酮能否提高正常动物的学习记忆，其对正常动物学习记忆的提高是否与其增加谷氨酸的释放有关？本研究采用空间延缓反应作业和谷氨酸NMDA受体拮抗剂MK-801在正常成年猴恒河猴上探讨了以上问题。 结果表明，口服芬克罗酮可显著提高成年猴的空间工作记忆，其量效曲线呈倒‘U’形，符合许多促智药的量效特点。0.25 mg/kg和0.5 mg/kg为芬克罗酮的最佳有效剂量 (p < 0.05 vs. 安慰剂)。肌注MK-801 (0.1 mg/kg) 显著降低成年猴的空间工作记忆 (p < 0.01 vs. 安慰剂)，而口服2.0 mg/kg和4.0 mg/kg的芬克罗酮则显著改善MK-801导致的工作记忆障碍 (p < 0.05 vs. MK-801)。芬克罗酮的所有测试剂量不影响猴在作业中的反应时 (p > 0.05 vs. 安慰剂)，表明芬克罗酮在该剂量范围不影响动物的运动能力。 本研究结果提示，芬克罗酮可能通钙激动作用促进谷氨酸的释放，在一定剂量范围内提高胞外谷氨酸水平，提高正常动物的空间工作记忆等认知功能。 关键词：芬克罗酮，恒河猴，空间工作记忆，空间延缓反应作业，谷氨酸，MK-801