986 resultados para IMPEDANCE MEASUREMENTS
Resumo:
This paper describes an interactive system for quickly modelling 3D body shapes from a single image. It provides the user with a convenient way to obtain their 3D body shapes so as to try on virtual garments online. For the ease of use, we first introduce a novel interface for users to conveniently extract anthropometric measurements from a single photo, while using readily available scene cues for automatic image rectification. Then, we propose a unified probabilistic framework using Gaussian processes, which predict the body parameters from input measurements while correcting the aspect ratio ambiguity resulting from photo rectification. Extensive experiments and user studies have supported the efficacy of our system. This system is now being exploited commercially online1. © 2011. The copyright of this document resides with its authors.
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A new method is presented for the extraction of single-chain form factors and interchain interference functions from a range of small-angle neutron scattering (SANS) experiments on bimodal homopolymer blends. The method requires a minimum of three blends, made up of hydrogenated and deuterated components with matched degree of polymerization at two different chain lengths, but with carefully varying deuteration levels. The method is validated through an experimental study on polystyrene homopolymer bimodal blends with M A≈1/2MB. By fitting Debye functions to the structure factors, it is shown that there is good agreement between the molar mass of the components obtained from SANS and from chromatography. The extraction method also enables, for the first time, interchain scattering functions to be produced for scattering between chains of different lengths. © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Flames are often stabilised on bluff-bodies, yet their surface temperatures are rarely measured. This paper presents temperature measurements for the bluff body surface of the Cambridge/Sandia Stratified Swirl Burner. The flame is stabilized by a bluff body, designed to provide a series of turbulent premixed and stratified methane/air flames with a variable degree of swirl and stratification. Recently, modellers have raised concerns about the role of surface temperature on the resulting gas temperatures and the overall heat loss of the burner. Laser-induced phosphorescence is used to measure surface temperatures, with Mg4GeO6F:Mn as the excitation phosphor, creating a spatially resolved temperature map. Results show that the temperature of the bluff body is in the range 550-900 K for different operating conditions. The temperature distribution is strongly correlated with the degree of swirl and local equivalence ratio, reflecting the temperature distribution obtained in the gas phase. The overall heat loss represents only a small fraction (<0.5%) of the total heat load, yet the local surface temperature may affect the local heat transfer and gas temperatures. © 2014 The Combustion Institute.
Resumo:
© 2014 by ASME. This paper, the second of two parts, presents a new setup for the two-stage two-spool facility located at the Institute for Thermal Turbomachinery and Machine Dynamics (ITTM) of Graz University of Technology. The rig was designed to reproduce the flow behavior of a transonic turbine followed by a counter-rotating low pressure stage such as those in high bypass aero-engines. The meridional flow path of the machine is characterized by a diffusing S-shaped duct between the two rotors. The role of wide chord vanes placed into the mid turbine frame is to lead the flow towards the low pressure (LP) rotor with appropriate swirl. Experimental and numerical investigations performed on this setup showed that the wide chord struts induce large wakes and extended secondary flows at the LP inlet flow. Moreover, large deterministic fluctuations of pressure, which may cause noise and blade vibrations, were observed downstream of the LP rotor. In order to minimize secondary vortices and to damp the unsteady interactions, the mid turbine frame was redesigned to locate two zero-lift splitters into each vane passage. While in the first part of the paper the design process of the splitters and the time-averaged flow field were presented, in this second part the measurements performed by means of a fast response probe will support the explanation of the time-resolved field. The discussion will focus on the comparison between the baseline case (without splitters) and the embedded design.
Resumo:
© 2014 by ASME. The paper presents a new setup for the two-stage two-spool facility located at the Institute for Thermal Turbomachinery and Machine Dynamics (ITTM) of Graz University of Technology. The rig was designed in order to simulate the flow behavior of a transonic turbine followed by a counter-rotating low pressure (LP) stage like the spools of a modern high bypass aeroengine. The meridional flow path of the machine is characterized by a diffusing S-shaped duct between the two rotors. The role of turning struts placed into the mid turbine frame is to lead the flow towards the LP rotor with appropriate swirl. Experimental and numerical investigations performed on the setup over the last years, which were used as baseline for this paper, showed that wide chord vanes induce large wakes and extended secondary flows at the LP rotor inlet flow. Moreover, unsteady interactions between the two turbines were observed downstream of the LP rotor. In order to increase the uniformity and to decrease the unsteady content of the flow at the inlet of the LP rotor, the mid turbine frame was redesigned with two zero-lifting splitters embedded into the strut passage. In this first part of the paper the design process of the splitters and its critical points are presented, while the time-averaged field is discussed by means of five-hole probe measurements and oil flow visualizations. The comparison between the baseline case and the embedded design configuration shows that the new design is able to reduce the flow gradients downstream of the turning struts, providing a more suitable inlet condition for the low pressure rotor. The improvement in the flow field uniformity is also observed downstream of the turbine and it is, consequently, reflected in an enhancement of the LP turbine performance. In the second part of this paper the influence of the embedded design on the time-resolved field is investigated.
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A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.
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We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs/GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (C) 2008 American Institute of Physics.
Resumo:
Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.
Resumo:
The admixture of linear and circular photogalvanic effects and (CPGEs) in AlxGa1-xN/GaN heterostructures has been investigated quantitatively by near-infrared irradiation at room temperature. The spin-based photocurrent that the authors have observed solidly indicates the sizable spin-orbital interaction of the two-dimensional electron gas in the heterostructures. Further analysis shows consistency between studies by optical and magnetic (Shubnikov de-Haas) measurements on the spin-orbital coupling effects among different AlxGa1-xN/GaN heterostructures, indicating that the CPGE measurement is a good way to investigate the spin splitting and the spin polarization in semiconductors. (C) 2007 American Institute of Physics.
Resumo:
Shubnikov-de Haas measurements were carried out for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures grown on GaAs substrates with different indium contents and/or different Si delta-doping concentrations. Zero-field (B-->0) spin splitting was found in samples with stronger conduction band bending in the InGaAs well. It was shown that the dominant spin splitting mechanism is attributed to the contribution by the Rashba term. We found that zero-field spin splitting not only occurs in the ground electron subband, but also in the first excited electron subband for a sample with Si delta-doping concentration of 6x10(12) cm(-2). We propose that this In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structure grown on GaAs may be a promising candidate spin-polarized field-effect transistors. (C) 2002 American Institute of Physics.
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An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.
Resumo:
In a search for the mechanism of the induced reduction reaction that occurred in X-ray photoelectron Spectroscopy (XPS) depth profiles measured experimentally on CeO2/Si epilayers grown by ion beam epitaxy (IBE), several possibilities have been checked. The first possibility, that the X-ray induces the reaction, has been ruled out by experimentation. Other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. The results proved that the main mechanism is the former, not the latter. (C) 1998 Elsevier Science Ltd. All rights reserved.
Resumo:
A 1GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed with the standard 0.35 mu m CMOS technique. The design of the photo-detector is analyzed and the CMOS trans-impedance amplifier is also analyzed in the paper. The integrating method is described too. The die photograph is also showed in the paper.