Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures
| Data(s) |
2007
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| Resumo |
The admixture of linear and circular photogalvanic effects and (CPGEs) in AlxGa1-xN/GaN heterostructures has been investigated quantitatively by near-infrared irradiation at room temperature. The spin-based photocurrent that the authors have observed solidly indicates the sizable spin-orbital interaction of the two-dimensional electron gas in the heterostructures. Further analysis shows consistency between studies by optical and magnetic (Shubnikov de-Haas) measurements on the spin-orbital coupling effects among different AlxGa1-xN/GaN heterostructures, indicating that the CPGE measurement is a good way to investigate the spin splitting and the spin polarization in semiconductors. (C) 2007 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Tang, YQ (Tang, Y. Q.); Shen, B (Shen, B.); He, XW (He, X. W.); Han, K (Han, K.); Tang, N (Tang, N.); Chen, WH (Chen, W. H.); Yang, ZJ (Yang, Z. J.); Zhang, GY (Zhang, G. Y.); Chen, YH (Chen, Y. H.); Tang, CG (Tang, C. G.); Wang, ZG (Wang, Z. G.); Cho, KS (Cho, K. S.); Chen, YF (Chen, Y. F.) .Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures ,APPLIED PHYSICS LETTERS,AUG 13 2007,91 (7):Art.No.071920 |
| Palavras-Chave | #半导体材料 #POLARIZATION |
| Tipo |
期刊论文 |
