Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

Thickness dependence of structure and optical properties of silver films deposited by magnetron sputtering

A series of silver films with different thickness were prepared under identical conditions by direct current magnetron sputtering. The optical properties of the silver films were measured using spectrophotometric techniques and the optical constants were calculated from reflection and transmission measurements made at near normal incidence. The results show that the optical properties and constants are affected by films' thickness. Below the critical thickness of 17 nm at which Ag film forms a continuous film, the optical properties and constants vary significantly as the thickness of films increases and then tends to a stable value which is reached at 41 nm. X-ray diffraction measurements were carried out to examine the structure and stress evolution of the Ag films as a function of films' thickness. It was found that the interplanar distance of (111) orientation decreases when the film thickness increases and tends to be close to that of bulk material. The compressive strains also decrease with increasing thickness. (C) 2007 Published by Elsevier B.V.

Efficiency improvement of organic light-emitting diodes using 8-hydroxy-quinolinato lithium as an electron injection layer

Organic light-emitting diodes (OLEDs) using tris-(8-hydroxy-quinolinato) aluminum (Alq(3)) as an emitter, 8-hydroxy-quinolinato lithium (Liq) as an electron injection layer, were prepared. Experimental results show that the efficiency of device with Liq is three times higher than that without Liq. The device using Liq as an injection layer is less sensitive in efficiency to the Liq thickness than that using LiF. In addition to the Alq3 based devices, Liq is also very effective as an electron injection layer for 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl based blue OLED and poly (2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene) based orange polymer OLED. (c) 2004 Elsevier B.V. All rights reserved.

Boundary-layer suction system design for laminar-flying-wing aircraft

The present study aims to provide insight into the parameters affecting practical laminar-flow-control suction power requirements for a commercial laminar-flying-wing transport aircraft. It is shown that there is a minimum power requirement independent of the suction system design, associated with the stagnation pressure loss in the boundary layer. This requirement increases with aerofoil section thickness, but depends only weakly on Mach number and (for a thick, lightly loaded laminar flying wing) lift coefficient. Deviation from the optimal suction distribution, due to a practical chamber-based architecture, is found to have very little effect on the overall suction coefficient; hence, to a good approximation, the power penalty is given by the product of the optimal suction flow rate coefficient and the average skin pressure drop. In the spanwise direction, through suitable choice of chamber depth, the pressure drop due to frictional and inertial effects may be rendered negligible. Finally, if there are fewer pumps than chambers, the average pressure drop from the aerofoil surface to the pump collector ducts, rather than to the chambers, determines the power penalty. For the representative laminar-flying-wing aircraft parameters considered here, the minimum power associated with boundary-layer losses alone contributes some 80-90% of the total power requirement. © 2011 by the American Institute of Aeronautics and Astronautics, Inc.

Robust airfoil design with respect to boundary layer transition

In order to disign an airfoil of which maximum lift coefficient (CL max) is not sensitive to location of forced top boundary layer transition. Taking maximizing mean value of CL max and minimizing standard deviation as biobjective, leading edge radius, manximum thickness and its location, maximum camber and its location as deterministic design variables, location of forced top boundary layer transition as stochastic variable, XFOIL as deterministic CFD solver, non-intrusive polynomial chaos as substitute of Monte Carlo method, we completed a robust airfoil design problem. Results demonstrate performance of initial airfoil is enhanced through reducing standard deviation of CL max. Besides, we also know maximum thickness has the most dominating effect on mean value of CL max, location of maximum thickness has the most dominating effect on standard deviation of CL max, maximum camber has a little effect on both mean value and standard deviation, and maximum camber is the only element of which increase can lead increase of mean value and standard deviation at the same time. Copyright © 2009 by the American Institute of Aeronautics and Astronautics, Inc.

Raman spectroscopy of shear and layer breathing modes in multilayer MoS2

We study by Raman scattering the shear and layer breathing modes in multilayer MoS2. These are identified by polarization measurements and symmetry analysis. Their positions change significantly with the number of layers, with different scaling for odd and even layers. A chain model can explain the results, with general applicability to any layered material, allowing a reliable diagnostic of their thickness. © 2013 American Physical Society.

Cortical thickness estimation of the proximal femur from multi-view Dual-Energy X-ray Absorptiometry (DXA)

Hip fracture is the leading cause of acute orthopaedic hospital admission amongst the elderly, with around a third of patients not surviving one year post-fracture. Although various preventative therapies are available, patient selection is difficult. The current state-of-the-art risk assessment tool (FRAX) ignores focal structural defects, such as cortical bone thinning, a critical component in characterizing hip fragility. Cortical thickness can be measured using CT, but this is expensive and involves a significant radiation dose. Instead, Dual-Energy X-ray Absorptiometry (DXA) is currently the preferred imaging modality for assessing hip fracture risk and is used routinely in clinical practice. Our ambition is to develop a tool to measure cortical thickness using multi-view DXA instead of CT. In this initial study, we work with digitally reconstructed radiographs (DRRs) derived from CT data as a surrogate for DXA scans: this enables us to compare directly the thickness estimates with the gold standard CT results. Our approach involves a model-based femoral shape reconstruction followed by a data-driven algorithm to extract numerous cortical thickness point estimates. In a series of experiments on the shaft and trochanteric regions of 48 proximal femurs, we validated our algorithm and established its performance limits using 20 views in the range 0°-171°: estimation errors were 0:19 ± 0:53mm (mean +/- one standard deviation). In a more clinically viable protocol using four views in the range 0°-51°, where no other bony structures obstruct the projection of the femur, measurement errors were -0:07 ± 0:79 mm. © 2013 SPIE.

Flow physics of a normal-hole bled supersonic turbulent boundary layer

An experimental study on normal hole bleed in a supersonic turbulent boundary layer has been conducted. A combination of LDV, Schlieren imagery and oil flow visualization were used to provide a better understanding of the three-dimensional flow field surrounding a supersonic bleed array. Experiments were performed at Mach numbers of 1.8 and 2.5, while previously published results at Mach numbers of 1.3 and 1.5 were also incorporated. The bleed system was capable of removing up to approximately 10% of the incoming boundary layer through a tunnel-spanning array of discrete holes with diameters the same order of magnitude of boundary layer displacement thickness. Inspection of boundary layer profiles downstream of the bleed region indicates that vorticity generated by the discrete holes can have a substantial influence on changes to the boundary layer shape factor and skin friction coefficient, through modification of the lower 20% of the boundary layer. This vorticity was visualized through oil-flow visualization, and LDV measurements, showing the development of two vortices off each bleed hole, and corresponding upwash and downwash regions with far-reaching three dimensional effects. © 2013 by J. M. Oorebeek and H. Babinsky.

Global linear stability of the boundary-layer flow over a rotating sphere

We consider the linear global stability of the boundary-layer flow over a rotating sphere. Our results suggest that a self-excited linear global mode can exist when the sphere rotates sufficiently fast, with properties fixed by the flow at latitudes between approximately 55°-65° from the pole (depending on the rotation rate). A neutral curve for global linear instabilities is presented with critical Reynolds number consistent with existing experimentally measured values for the appearance of turbulence. The existence of an unstable linear global mode is in contrast to the literature on the rotating disk, where it is expected that nonlinearity is required to prompt the transition to turbulence. Despite both being susceptible to local absolute instabilities, we conclude that the transition mechanism for the rotating-sphere flow may be different to that for the rotating disk. © 2014 Elsevier Masson SAS. All rights reserved.

Excitation energy dependent raman signatures of ABA- and ABC-stacked few-layer graphene

The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81â €...eV were used. The position and the line shape of the Raman 2D, G*, N, M, and other combination modes show dependence on the excitation energy as well as the stacking order and the thickness. One can unambiguously determine the stacking order and the thickness by comparing the 2D band spectra measured with 2 different excitation energies or by carefully comparing weaker combination Raman modes such as N, M, or LOLA modes. The criteria for unambiguous determination of the stacking order and the number of layers up to 5 layers are established.

Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier y(c) is exceeded. Our calculations also show that the critical AlN content of the second barrier y(c) will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN).

Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures

We report on optimizing the GaAs capping layer growth of 1.3 mu m InAs quantum dots (QDs) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. The initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees C, which is the same for the growth of both the QDs and a 5-nm-thick In0.15Ga0.85As strain-reducing capping layer on the QDs, while the remaining part is grown at a higher temperature of 560 degrees C after a rapid temperature rise and subsequent annealing period at this temperature. The capping layer is deposited at the low temperatures (<= 560 degrees C) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the QDs. We demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the QDs. This significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers. (C) 2008 Elsevier B.V. All rights reserved.

Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy

ZnO film of 8 mu m thickness was grown on a sapphire (0 0 1) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 0 2) and (1 0 2) omega-scan rocking curves are 119 and 202 arcsec, corresponding a high crystal quality. The status of the strain in ZnO thick film was particularly analyzed by X-ray diffraction (XRD) omega-20 scanning. The results show that the strain in ZnO film is compressive, which is also supported by Raman scattering spectroscopy. The compressive strain can solve the cracking problem in the quick growth of ZnO thick film. (c) 2008 Elsevier Ltd. All rights reserved.

Polarization effects simulation of AlGaN/GaN heterojunction by using a symbolistic delta-doping layer

Polarization effects in AlGaN/GaN heterojunction are simulated based on a traditional semiconductor device simulator. A delta doping layer is purposely inserted at the interface of the heterojunction in the simulation, so the ionized donors or acceptors can represent polarization-induced positive or negative fixed charges. The free electron distribution of single AlGaN/GaN heterostructures with Ga-face and N-face growth is compared, and the results of the simulation show that carrier confinement takes place only in the former structure. The dependence of sheet density of free electrons at the interface of Ga-face growth AlGaN/GaN on Al composition and the thickness of AlGaN is also investigated. The consistency of simulation results with the experiments and calculations reported by other researchers shows that this method can be effectively used to deal with the polarization effects in the simulation of GaN-based heterojunction devices. (C) 2004 Elsevier Ltd. All rights reserved.