丙型肝炎病毒(HCV)株的全基因组序列测定: 完成HCV 基因型6 全套17 个亚型基因组的测序

丙型肝炎病毒（Hepatitis C virus, HCV）的全基因组序列测定，曾经由于许多方面 的条件限制而难于完成。但是，其对于研究HCV 分子病毒学、流行病学、进化和致 病性却至关重要，特别是在临床应用中，不同序列的基因型决定α-干扰素治疗的不同 效果。在本研究完成之前，HCV 基因型6 仅有6 个亚型有其全基因组序列。因此， 本研究的主要目的在于，测定HCV 变异株代表基因型6 其余的11 个亚型和新亚型的 全基因组序列，并深入分析。 本研究从样品分别来自于中国、泰国，和在美国及加拿大生活的东南亚国家移民 的HCV 感染者。因为样品有限，改良传统的PCR 方法，摸索出“桥”和“岛”DNA 全序列扩增法，从每例样品100μl 血清或从100μl 血清中获得的cDNA 中测定了13 个HCV 全基因组核苷酸序列。 以来源于Genbank 的已知基因型6 的七个全长序列为参考对所测定的13 个亚型 全序列进行共同分析显示，这些全基因组核苷酸的两两比较相似率变化范围为 71.9%--82.7%，著地， 这四对序列间的相同率高于标准定义的HCV 基因亚型之间的 范围值75%-80%。为了进一步理解和证实这些亚型间的遗传相似性，本研究还测定 了代表这4 对亚型的病毒原型株的全基因序列，结果显示了相同的核苷酸水平上的变 异范围，这为HCV 基因亚型的分类提供了新的认识，亦强调了全长序列对于分类的 重要性。 从系统发育方面的分析证实，本研究所测得的13 个分离株都属于基因型6。在系 统发育树上，每个病毒株代表一个独立的枝。并形成了高度分化的HCV 基因型6 分 枝，从而清楚显示，各亚型的独立分布。本研究至此完成了基因型6 中17 个亚型的 全序列测定，而km41 和gz52557 因缺乏其临床上和流行病学上的多个感染病例的证 实，而继续保留其亚型未命名状态。结合来源于Los Alamos HCV database 的基因型6 的已知部分序列的变异株进一步分析，发现各相近亚型变异株均来自东南亚或东南亚国家移民，这提示了这些HCV 的相同感染源。 为了探讨HCV 夫妻间传播的可能性，本研究还测定了来自于泰国的两位感染 HCV 的献血员及其感染HCV 的配偶。这4 个基因序列C-0044 和C-0046 之间核苷 酸相同率为98.1%，而C-0185 和 C-0192 之间为97.8%。文献研究感染HCV 的夫妇 间的部分亚基因序列的相同率为96.3%至100%，本研究结果与此范围相符，并第一 次用全基因组序列提示了HCV 在夫妻间传播的可能性。 本研究还测定了基因型6 的另一个变异株的全基因组序列：HK6554，香港的某患 者，与上文中的GX004 一起，均为静脉吸毒者，并共同感染了HCV 和HIV-1。分析 结果还表明了一种趋势，即是在中国南方，基因亚型6e 有从以前的地方性传播方式 转为现有的流行性传播方式。这种转变可能由于静脉吸毒感染HCV 的人群的网络传 播而加快。 综上，本研究用传统PCR、简并引物结合链特异引物的方法有效地测定了共21 个病毒株的全基因序列。该方法也可用于其它分子流行病学的研究，特别在测定珍贵 的病毒序列然而样品量又受限时。本研究所测定的全基因组序列代表HCV 中最古老、 分化最多、地方性传播、又可能动物源性的基因型6 的全套17 个亚型。这有助于进 一步理解HCV 基因亚型的分类意义、更准确评价HCV 的进化和起源，亦有助于发 现HCV 新的变异株和提高临床诊断、治疗，为将来HCV 的流行及公众健康的预测、 预防和疫苗的制备奠定了坚实的分子遗传学基础。

Role of the evanescent states in the electron transport in quantum waveguides

Recognizing the computational difficulty due to the exponential behavior of the evanescent states in the calculations of the electron transmission in waveguide structures, the authors propose two transfer matrix methods and apply them to investigate the influence of the evanescent states on the electron wave propagation. The study shows that the effect of the evanescent states on the electron transport is obvious when the electron energy is close to the subband minima. The results show that the calculated transmissions are much enhanced if the evanescent states are omitted in the calculations. For the multiple-stub structures, it is found that the connecting channel length has a critical effect on the electron transmission depending on it larger or smaller than the attenuation lengths of evanescent states. Based on the study of the evanescent states, a new kind of waveguide structures which exhibit quantum modulated transistor action is proposed. (C) 1997 American Institute of Physics.

Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well

The magnetotransport properties of the two-dimensional (2D) electron gas confined in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well structure were studied at temperatures down to 0.35 K in magnetic fields up to 7.5 T. Well resolved 2D Shubnikovde Haas (SdH) oscillations were observed, although the conductivity of the sample in the as grown state was dominated by a bulk parallel conduction layer. After removing most of the parallel conduction layer by wet chemical etching the amplitude and number of SdH oscillations increased. From the temperature dependence of the amplitude the effective mass of the electrons was estimated as 0.17 m(0). Copyright (C) 1996 Published by Elsevier Science Ltd

纳米硅(nc-Si:H )/晶体硅(c-Si)异质结太阳电池的数值模拟分析

运用美国宾州大学发展的AMPS程序模拟分析了n-型纳米硅(n+-nc-Si:H)/p-型晶体硅(p-c-Si)异质结太阳电池的光伏特性.分析表明,界面缺陷态是决定电池性能的关键因素,显著影响电池的开路电压(VOC)和填充因子(FF),而电池的光谱响应或短路电流密度(JSC)对缓冲层的厚度较为敏感.对不同能带补偿(bandgap offset)的情况所进行的模拟分析表明,随着ΔEc的增大,由于界面态所带来的开路电压和填充因子的减小逐渐被消除,当ΔEc达到0.5eV左右时界面态的影响几乎完全被掩盖.界面层的其他能带结构特征对器件性能的影响还有待进一步研究.最后计算得到了这种电池理想情况下(无界面态、有背面场、正背面反射率分别为0和1)的理论极限效率ηmax=31.17% (AM1.5,100mW/cm2,0.40-1.10μm波段).

电化学C-V法研究磁性GaMnSb/GaSb单晶的载流子浓度纵向分布

采用电化学C-V方法和Tiron电解液研究了GaMnSb/GaSb单晶载流子浓度的纵向分布，所得结果与Hall测量结果和X射线衍射分析结果一致。研究结果表明GaMnSb单晶中的Mn原子替代了GaSb中部分Ga原子的位置，并在GaSb中形成了浅受主能级。

Electrical Transport Properties of Annealed Undoped InP

The electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage (I-V) measurements for semiconducting and semi-insulating samples, receptively. Defect band conduction in annealed semiconducting InP can be observed from TDH measurement, which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation. The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown. Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.

Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively.

UASB反应器处理维生素C生产废水研究

维生素C生产废水有机物浓度高、成分复杂、排放量大，是一种亟待处理的典型工业废水。本研究分别采用实验室规模和中试规模的升流式厌氧颗粒污泥床反应器（UASB）对该制药工业废水的厌氧生物处理工艺进行了较为深入的研究。同时采用两种不依赖于纯培养的分子生物学手段—变性梯度凝胶电泳（DGGE）和扩增核糖体DNA限制性分析（ARDRA）技术揭示了UASB反应器不同运行阶段污泥中微生物群落多样性组成及变化。此外，首次研究了零价铁（Fe0）在厌氧消化过程中对反应器运行及微生物群落结构的影响。 采用城市污水处理厂厌氧消化池絮状污泥和处理啤酒废水的颗粒污泥混合接种，小试中温（35±1℃）UASB反应器在其运行的第65天启动成功。反应器稳定运行阶段，在进水COD浓度为9000mg/L、水力停留时间为12h、容积负荷为13.6 kgCOD/m3.d条件下，其COD去除率稳定在85~90%之间，沼气产率达到4.5 m3/m3.d，沼气甲烷含量平均为72%。中试UASB反应器的接种污泥为厌氧消化污泥，其启动时间相对较长，为90天。在稳定运行期，反应器的进水COD浓度为8000~10000mg/L，水力停留时间和容积负荷分别保持在12~16h和10.6~14.2 kgCOD/m3.d范围，该阶段反应器的平均COD去除率稳定在85%左右，沼气产率平均为5.2m3/m3.d，沼气中甲烷含量为69%。上述结果表明中温UASB工艺用于维生素C生产废水处理是高效、可行的。 与对照反应器相比，添加Fe0的小试UASB反应器的COD去除率和沼气产量分别提高了6.5%和10.2%。同时，磷酸盐平均去除率为79%，比对照提高了64%，目前尚未见类似研究报道。在中试规模的UASB反应器中补充一定量的Fe0可缩短反应器启动时间，促进颗粒污泥的形成，该结果可能具有重要的应用价值。培养试验进一步表明，Fe0可以作为产甲烷菌还原CO2生成甲烷的电子供体。培养实验还表明，当系统中存在硝酸盐（0.40 mM）和硫酸盐（0.26 mM）时，Fe0促产甲烷过程受到一定程度的抑制。 采用细菌通用引物968F/1401R和341F/907R获得的PCR-DGGE指纹图谱均表明UASB反应器不同运行阶段细菌种群结构变化明显。小试和中试稳定期污泥的微生物多样性均高于各自初始接种污泥。产甲烷菌通用引物340F/519R的PCR-DGGE结果显示，虽然接种污泥中产甲烷菌的丰富度系数略低于稳定期，但总体而言，反应器运行期间产甲烷菌的种群组成相对稳定。 通过构建不同处理和不同运行阶段污泥样品的16S rRNA基因文库并对克隆基因进行限制性内切酶消化、测序分析。结果表明，稳定期两个反应器微生物群落结构相似，但与各自接种污泥差异明显。小试UASB反应器接种污泥中细菌的优势菌群分别为变形菌纲的δ亚纲（28.7%）和β亚纲（17.4%），至稳定运行期则演替为革兰氏阳性低GC菌群（21.9%）和变形菌纲的δ亚纲（14.0%）。中试反应器接种污泥Green non-sulfer bacteria（25.9%）和变形菌纲的δ亚纲（16.4%）类群占优势，而稳定期Green non-sulfer bacteria类群（17.9%）、革兰氏阳性低GC菌群（16.2%）和变形菌纲的δ亚纲（15.4%）为优势菌群。 产甲烷菌的优势克隆为SRJ 230、SRJ 26和SRJ 583，前两者分别与Methanosaeta concilii和未培养的Methanobacteria-like克隆Gran7M4的同源性达到97%和98%，后者与Methanomethylovorans. sp同源性为99%。接种污泥中上述类群占总克隆数量的比例较低。小试、中试接种污泥中产甲烷菌分别占7.8%和3.0%，但稳定运行期，该比例明显增加，分别达到21.9%和18.8%。上述结果表明启动期与稳定期污泥产甲烷菌种群组成相对稳定，但各类群数量明显增加。 添加Fe0的UASB反应器稳定运行期污泥中产甲烷菌比例（31.2%）高于对照反应器（24.2%）, 革兰氏阳性低GC类群、变形菌纲的δ亚纲比例差异不明显，而变形菌纲β亚纲（6.0%）和Green non-sulfer bacteria（9.2%）的比例均分别低于对照反应器（13.1%和17.1%）。该结果表明，添加Fe0使反应器内微生物群落多样性发生了显著变化。 此外，在添加Fe0的UASB反应器中检测到特异性的克隆SRJ 341和SRJ 320，两者分别同磷酸盐去除和铁氧化有关的克隆子Orbal D41和Clone195的序列相似性达95%和96%。这两个类群可能分别与磷酸盐去除及铁促产甲烷作用密切相关。这一结果尚未见报道。

不同施肥制度下土壤微生物体C、N量季节变化及其在土壤N素供给中的作用

本文利用改进的“氯仿薰蒸天菌法”比较了两种不同施肥制度下土壤微生物体C.N量及其季节变化，估算土壤生物量的周转速度和在土壤N素供给中的作用。循环处理土壤的基础呼吸较非循环处理高出14%。N矿化强度高出20%。土壤生物量平均增长11%。表明循环处理分解有机物料和供给养分的能力较非循环处理强。并且随着土壤有机肥料的循环回田。土壤生物量的周转速度加快。年矿化量增加。成为土壤供N中不可忽视的N源之一。同时耕层土壤微生物体生物具有明显的季节变化。全年呈春秋低，夏季高的变化趋势。据1988年偏低的估算，土壤生物量年变化幅度为±15%（非循环）和±17%（循环）。周转速度为37%（非循环）和48%（循环），年矿化量占土壤供N总量的10%（非循环）和13%（循环）。

Numerical investigation of particle velocity distributions in aeolian sand transport

Particle velocity distribution in a blowing sand cloud is a reflection of saltation movement of many particles. Numerical analysis is performed for particle velocity distribution with a discrete particle model. The probability distributions of resultant particle velocity in the impact-entrainment process, particle horizontal and vertical velocities at different heights and the vertical velocity of ascending particles are analyzed. The probability distributions of resultant impact and lift-off velocities of saltating particles can be expressed by a log-normal function, and that of impact angle comply with an exponential function. The probability distribution of particle horizontal and vertical velocities at different heights shows a typical single-peak pattern. In the lower part of saltation layer, the particle horizontal velocity distribution is positively skewed. Further analysis shows that the probability density function of the vertical velocity of ascending particles is similar to the right-hand part of a normal distribution function, and a general equation is acquired for the probability density function of non-dimensional vertical velocity of ascending particles which is independent of diameter of saltating particles, wind strength and height. These distributions in the present numerical analysis are consistent with reported experimental results. The present investigation is important for understanding the saltation state in wind-blown sand movement. (C) 2009 Elsevier B.V. All rights reserved.