BaFBr:Eu（2＋）的高温热释发光

于2010-11-23批量导入

MOCVD生长的II-VI族化合物固溶体组分的热力学分析.2.Hg（1-x）CdxTe体系

对MOCVD生长Hg_(1-x)Cd_xTe进行了热力学分析.所用的起始原材料为Hg、DM-Cd和R_2Te.计算结果一方面表明CdTe优先并入倾向使得在通常的DAG工艺中x值非常不易控制.另一方表明即使在Hg存在的情况下,也可以沉积几平纯的CdTe,这对实现IMP工艺非常有利,计算结果还表明II/VI比对HgCdTe的组分控制起着关键性的作用.在DAG工艺中,较低的II/VI比可以改善对x值的控制能力,LMP-DAG工艺是降低II/VI比的较好途径.还计算了生长温度和反应室压力对固相组分的影响以及LMP-DAG工艺中生长温度与HgCdTe组分对最低汞分压的影响.

Photoemission evidence for dilute k-doped phase KxC（60） with x<0.2

于2010-11-23批量导入

能量转换效率达10.2%的非晶硅单结太阳能电池

于2010-11-23批量导入

2 x 2 electrooptical switch in silicon-on-insulator waveguide

A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7dB and crosstalk of 4.8dB has been observed.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing

The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650degreesC and 900degreesC. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Terahertz Quantum Cascade Laser Operating at 2.94 THz

The development of quantum cascade laser at 2.94 THz is reported. The laser structure is based on a bound-to-continuum active region and a semi-insulating surface-plasmon waveguide. Lasing is observed up to a heat-sink temperature of 70 K in pulsed mode with light power of 4.75 mW at 10 K and 1 mW at 70 K. A threshold current density of 296.5 A/cm(2) and an internal quantum efficiency of 1.57 x 10(-2) per cascade period are also observed at 10 K. The characteristic temperature of this laser is extracted to be T-0 = 57.5 K.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

不同水分管理下稻田CH<,4>和N<,2>O的排放及其微生物学过程

大量研究表明，农田水分状况发生变化对CH<,4>排放有重大影响，水稻生长期的晒田处理不仅有利于植株生长而且能增加CH<,4>氧化，减少CH<,4>生成.但近年来注意到有利于控制CH<,4>排放的水分管理措施往往会促进N<,2>O排放，而其机理及对大气净温室效应的影响报道甚少.该文对不同水分管理下CH<,4>和N<,2>O的排放进行了定量分析并对温室效应的贡献进行了估算;同时对二种气体排放的微生物学过程进行了研究，观测了相关微生物菌群数量及田间环境因子的变化，并对不同水分处理期间的土壤理化性质对CH<,4>和N<,2>O排放及微生物数量的影响作了进一步分析，为制定综合控制稻田CH<,4>和N<,2>O的排放措施提供了科学依据.

林木及林下土壤N<,2>O排放的研究

N<,2>O是一种重要的温室气体.该研究以中国长白山典型的森林生态系统——阔叶红松林为研究对象，采用空气样品同步采样法和封闭罩法首次对几种主要树木——水曲柳、红松、赤杨（阳生树木）和椴树（阴生树木）的N<,2>O释放进行了较为系统的研究，同时对林下土壤N<,2>O排放进行了实验室模拟实验.获得以下主要研究结果：1.首次确证在自然状态下，林木是森林生态系统中除土壤外的另一重要N<,2>O排放源.2.首次发现光照对阴生树木与阳生树木N<,2>O释放的调节作用不同.3.首次在野外自然条件下，对林木的N<,2>O排放通量进行了测定，并估算了其年排放总量.4.发现在一定条件下，土壤N<,2>O排放和CH<,4>吸收与土壤pH和温度呈正相关.

IL-2基因的突变及其与肠毒素融合基因的克隆和表达

由金黄色葡萄球菌分泌到胞外的单亚基蛋白中有肠毒素A和B。近年来两种毒素在肿瘤治疗研究方面取得了很大进展。白介素-2作为靶向分子，在抗肿瘤的药物中很有应用前景。本文分别对肠毒素A、肠毒素B和白介素-2进行了克隆和表达，并将白介素-2（125Ala）分别与肠毒素A227AI。肠毒素B进行了融合表达。从筛选到的天然金黄色葡萄球菌STSw的基因组中，通过PCR方法扩增出seb基因，同时突变了该基因两端几个稀有密码子。并将其克隆到7ZTS载体上进行表达，表达量占细胞总蛋白的33.5％。以seam基因为模板，通过重叠PCR将其227位天冬氨酸突变为丙氨酸，以降低其毒性。该突变基因重组到7ZTS载体中，并在JM109（DE3）中表达，表达量占细胞总蛋白的51.5％。通过重叠PCR法，对人的IL-2基因进行定点突变。共突变60个碱基，涉及51个氨基酸，其中第125位的半肤氨酸被突变为丙氨酸。该基因在大肠杆菌中表达量占总蛋白的30％。分别对上述三个工程菌的表达条件进行了探索。先制备出融合基因，再对融合基因进行表达，得到两种融合蛋白。它们是以6个甘氨酸和1个苏氨酸为链，将IL一2（125Ala）与肠毒素A227（Ala）、B分别连接起来，即IL-2（125Ala）-SEA227（Ala）和IL-2（125Ala）-SEB二者在大肠杆菌中表达量分别占总蛋白的10％和12％。以上实验结果为将几种蛋白开发成抗肿瘤靶向药物奠定了坚实基础。