Two-photon asymmetric color-locking second-order stochastic correlation of attosecond polarization beats

Based on the phase-conjugation polarization interference between two two-photon processes, we theoretically investigated the attosecond scale asymmetry sum-frequency polarization beat in four-level system (FASPB). The field correlation has weak influence on the FASPB signal when the laser has narrow bandwidth. Conversely, when the laser has broadband linewidth, the FASPB signal shows resonance-nonresonance cross correlation. The two-photon signal exhibits hybrid radiation-matter detuning terahertz; damping oscillation, i.e., when the laser frequency is off resonance from the two-photon transition, the signal exhibits damping oscillation and the profile of the two-photon self-correlation signal also exhibits zero time-delay asymmetry of the maxima. We have also investigated the asymmetry of attosecond polarization beat caused by the shift of the two-photon self-correlation zero time-delay phenomenon, in which the maxima of the two two-photon signals are shifted from zero time-delay point to opposite directions. As an attosecond ultrafast modulation process, FASPB can be intrinsically extended to any level-summation systems of two dipolar forbidden excited states.

侵蚀环境人工刺槐林土壤水稳性团聚体演变及其养分效应

采用时空互代法,以典型侵蚀环境纸坊沟流域生态恢复过程中不同年限的人工刺槐林为研究对象,选取坡耕地和天然侧柏林为参照,分析了植被恢复过程中土壤水稳性团聚体变化规律及其与土壤养分状况之间的相互关系。结果表明,侵蚀环境下的坡耕地由于人为耕作干扰,土壤水稳性团聚体含量低下,抗蚀性能较差。营造刺槐林前5 a土壤水稳性团聚体含量较坡耕地显著快速增加,随后增幅变缓,成对数增长,恢复25 a后土壤水稳性团聚体含量已经达到天然侧柏林水平。在植被恢复过程中土壤小粒径的水稳性团聚体逐渐聚集转变形成大粒径的团聚体。相关性分析和回归分析表明,植被恢复过程中>0.25 mm土壤水稳性团聚体与有机碳、全氮、碱解氮、速效钾、容重等相关性达到显著(p<0.05)或极显著水平(p<0.01),与全磷和速效磷相关性较弱。坡耕地退耕营造刺槐林后可以减少人为干扰,增加碳素和氮素供给,提高水稳性团聚体含量,使土壤抗蚀性能提高。

Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs

Cd in GaAs is an acceptor atom and has the largest atomic diameter among the four commonly-used group-II shallow acceptor impurities (Be, Mg, Zn and Cd). The activation energy of Cd (34.7 meV) is also the largest one in the above four impurities, When Cd is doped by ion implantation, the effects of lattice distortion are expected to be apparently different from those samples ion-implanted by acceptor impurities with smaller atomic diameter. In order to compensate the lattice expansion and simultaneously to adjust the crystal stoichiometry, dual incorporation of Cd and nitrogen (N) was carried out into GaAs, Ion implantation of Cd was made at room temperature, using three energies (400 keV, 210 keV, 110 keV) to establish a flat distribution, The spatial profile of N atoms was adjusted so as to match that of Cd ones, The concentration of Cd and N atoms, [Cd] and [N] varied between 1 x 10(16) cm(-3) and 1 x 10(20) cm(-3). Two type of samples, i.e., solely Cd+ ion-implanted and dually (Cd+ + N+) ion-implanted with [Cd] = [N] were prepared, For characterization, Hall effects and photoluminescence (PL) measurements were performed at room temperature and 2 K, respectively. Hall effects measurements revealed that for dually ion-implanted samples, the highest activation efficiency was similar to 40% for [Cd] (= [N])= 1 x 10(18) cm(-3). PL measurements indicated that [g-g] and [g-g](i) (i = 2, 3, alpha, beta,...), the emissions due to the multiple energy levels of acceptor-acceptor pairs are significantly suppressed by the incorporation of N atoms, For [Cd] = [N] greater than or equal to 1 x 10(19) cm(-3), a moderately deep emission denoted by (Cd, N) is formed at around 1.45-1.41 eV. PL measurements using a Ge detector indicated that (Cd, N) is increasingly red-shifted in energy and its intensity is enhanced with increasing [Cd] = [N], (Cd, N) becomes a dominant emission for [Cd] = [N] = 1 x 10(20) cm(-3). The steep reduction of net hole carrier concentration observed for [Cd]/[N] less than or equal to 1 was ascribed to the formation of (Cd, N) which is presumed to be a novel radiative complex center between acceptor and isoelectronic atoms in GaAs.

Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H films.

长白山地区近50年气候变化及其预估

收集长白山地区15个气象站1953-2007年气温、降水、蒸发、日照时数和水汽压观测数据和国家气候中心整理的2001-2099年的 气温、降水预估资料，利用数理统计方法，系统分析长白山地区气候现状、变化及其预估，为气候变化对人类生存环境影响研究并制定适应对策提供依据。主要结论如下： 1.长白山地区气温、降水日数、日照时数和不同界限温度（≥0℃、≥5℃、≥10℃和<0℃）积温均有显著趋势。年极端最低、年平均、平均最高/最低气温和气温日/年较差在1984、1992、1995、1985、1972和1979年发生突变。所有最高/最低气温与日照百分率有显著负相关关系，一定程度是温室效应结果；最高、最低气温变化不同步造成气温日较差和年较差的非对称性。 2.长白山地区生长季节合计降水量和降水强度日际变化较大。降水以7月30日为界，呈现前升后降极显著的线性趋势，且发生均值突变。降水强度以6月27日和9月3日为分界点，分为三个阶段。降水集中度、集中期和集中时段时空非均一性分布明显。 3.在SRES A1B、SRES A2和SRES B1三种情景下年平均气温均为上升趋势，年内变化一致为冬季升温最迅速，夏季则相对缓慢；而年降水强度总体增加，年内变化比较一致：冬季增加最为明显，而夏季变化不大。 4.未来长白山地区各站≥0℃、≥5℃和≥10℃的积温均有不同程度增加，持续时间延长。负积温增加，持续时间缩短，开始日期推迟，而结束时间提前。