Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films

The effects of oxygen partial pressure on the structure and photoluminescence (PL) of ZnO films were studied. The films were prepared by direct current (DC) reactive magnetron sputtering with various oxygen concentrations at room temperature. With increasing oxygen ratio, the structure of films changes from zinc and zinc oxide phases, single-phase ZnO, to the (002) orientation, and the mechanical stresses exhibit from tensile stress to compressive stress. Films deposited at higher oxygen pressure show weaker emission intensities, which may result from the decrease of the oxygen vacancies and zinc interstitials in the film. This indicates that the emission in ZnO film originates from the oxygen vacancy and zinc interstitial-related defects. From optical transmittance spectra of ZnO films, the plasma edge shifts towards the shorter wavelength with the improvement of film stoichiometry. (C) 2004 Elsevier B.V. All rights reserved.

Influences of CO2 laser irradiation on the structure and photoluminescence of zinc oxide thin films

CO2 laser irradiation experiments on ZnO thin films are reported. The structural, optical, luminescent and vibrational properties of the samples were investigated by X-ray diffraction (XRD), transmittance, photoluminescence (PL) and Raman measurements. XRD results show that the crystalline of the irradiated films was improved. The (002) peaks of irradiated ZnO films shift to. higher 20 angles due to the stress relaxation in the case of laser beam irradiation. From optical transmittance spectra, all films exhibit high transmittance in the visible range, the optical band edge of irradiated films showed a redshift compared with that of as-grown films. Compared with the as-grown films, the photoluminescence emission (in particular the relative intensities of visible emissions) intensities of irradiated samples enhanced. In the Raman scattering spectral both the A I. and E modes exhibited slight Raman blueshift. (c) 2005 Elsevier B.V. All rights reserved.

ZnO : Zn phosphor thin films prepared by face-to-face annealing

ZnO:Zn phosphor thin films were prepared by face-to-face annealing at 450 degrees C in air. The effects of the face-to-face annealing on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. Measurement results showed that the crystal quality of ZnO films was improved by face-to-face annealing. Both UV light emission and visible light emission were enhanced compared to those of open annealing films. The UV emission peak was observed to have a blueshift towards higher energy. The optical band-gap edge of as-annealed films shifted towards longer wavelength. (c) 2005 Elsevier B.V.. All rights reserved.

Effects of oxygen partial pressure on packing density and laser damage threshold of TiO2 thin films

TiO2 films are deposited by electron beam evaporation as a function of oxygen partial pressure. The packing density, refractive index, and extinction coefficient all decrease with the increase of pressure, which also induces the change of the film's microstructure, such as the increase of voids and H2O concentration in the film. The laser-induced damage threshold (LIDT) of the film increases monotonically with the rise of pressure in this experiment. The porous structure and low nonstoichiometric defects absorption contribute to the film's high LIDT. The films prepared at the lowest and the highest pressure show nonstoichiometric and surface-defects-induced damage features, respectively.(C) 2007 American Institute of Physics.

Optical and electrical properties of TiOx thin films deposited by electron beam evaporation

The TiOx thin films were prepared by electron beam evaporation using TiO as the starting material. The effect of the annealing temperature on the optical and electrical properties was investigated. The spectra of X-ray photoelectron spectroscopy reveal that Ti in the films mainly exist in the forms of Ti2+ and Ti3+ below 400 degrees C 24h annealing. The charge transfer between different titanium ion contribute greatly to the color, absorption, and electrical resistance of the films. (c) 2006 Elsevier Ltd. All rights reserved.

Effects of annealing on microstructure and optical properties of TiO2 sculptured thin films

The evolution of microstructure and optical properties of TiO2 sculptured thin films under thermal annealing is reported. XRD, field emission SEM, UV-Vis-NIR spectra are employed to characterize the microstructural and optical properties. It is found that the optimum annealing temperature for linear birefringence is 500 degrees C. The maximum of transmission difference for linear birefringence is up to 18%, which is more than twice of that in as-deposited thin films. In addition, the sample annealed at 500 degrees C has a minimum of column angle about 12 degrees C. The competitive process between the microstructural and optical properties is discussed in detail. Post-annealing is a useful method to improve the linear birefringence in sculptured thin films for practical applications.

Influence of ytterbia content on residual stress and microstructure of Y2O3-ZrO2 thin films prepared by EB-PVD

Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 molar contents (0, 3, 7, and 12 mol%) are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on residual stresses and structures of YSZ thin films are studied. Residual stresses are investigated by means of two different techniques: the curvature measurement and x- ray diffraction method. It is found that the evolution of residual stresses of YSZ thin films by the two different methods is consistent. Residual stresses of films transform from compressive stress into tensile stress and the tensile stress increases monotonically with the increase of Y2O3 content. At the same time, the structures of these films change from the mixture of amorphous and monoclinic phases into high temperature cubic phase. The variations of residual stress correspond to the evolution of structures induced by adding of Y2O3 content.

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Structure and optical properties of Nb<inf>2inf>O<inf>5inf> sculptured thin films by glancing angle deposition

Nb2O5 sculptured thin. films deposited by electron beam evaporation with glancing angle deposition were prepared. Nb2O5 sculptured thin. films with tilted columns are optical anisotropy. XRD, SEM, UV-vis-NIR spectra are employed to characterize the microstructure and optical properties. The maximum of birefringence (Delta n) is up to 0.045 at alpha = 70 degrees with packing density of 0.487. With increasing the deposition angle, refractive index and packing density of Nb2O5 STF are decreasing. The relationship among deposition parameter, microstructure and optical properties was investigated in detail. (C) 2008 Elsevier B. V. All rights reserved.

Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films

HfO2 is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm(2), but it is increased to 8.98 J/cm(2) after annealing under temperature of 200 degrees C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (C) 2008 Elsevier B.V. All rights reserved.

Er3+-doped glass-polymer composite thin films fabricated using combinatorial pulsed laser deposition

Siloxane Polymer exhibits low loss in the 800-1500 nm range which varies between 0.01 and 0.66 dB cm1. It is for such low loss the material is one of the most promising candidates in the application of engineering passive and active optical devices [1, 2]. However, current polymer fabrication techniques do not provide a methodology which allows high structurally solubility of Er3+ ions in siloxane matrix. To address this problem, Yang et al.[3] demonstrated a channel waveguide amplifier with Nd 3+-complex doped polymer, whilst Wong and co-workers[4] employed Yb3+ and Er3+ co-doped polymer hosts for increasing the gain. In some recent research we demonstrated pulsed laser deposition of Er-doped tellurite glass thin films on siloxane polymer coated silica substrates[5]. Here an alternative methodology for multilayer polymer-glass composite thin films using Er3+ - Yb3+ co-doped phosphate modified tellurite (PT) glass and siloxane polymer is proposed by adopting combinatorial pulsed laser deposition (PLD). © 2011 IEEE.

Bundles of polytwins as meta-elastic domains in the thin polycrystalline simple multi-ferroic system PZT.

We used enhanced piezo-response force microscopy (E-PFM) to investigate both ferroelastic and ferroelectric nanodomains in thin films of the simple multi-ferroic system PbZr(0.3)Ti(0.7)O(3) (PZT). We show how the grains are organized into a new type of elastic domain bundles of the well-known periodic elastic twins. Here we present these bundle domains and discuss their stability and origin. Moreover, we show that they can arrange in such a way as to release strain in a more effective way than simple twinning. Finally, we show that these bundle domains can arrange to form the macroscopic ferroelectric domains that constitute the basis of ferroelectric-based memory devices.