Novel hybrid voltage controlled ring oscillators using single electron and MOS transistors

This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (VCO) using a single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. The novel SET/MOS hybrid VCO circuits possess the merits of both the SET circuit and the MOS circuit. The novel VCO circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. We use the SPICE compact macro model to describe the SET and simulate the performances of the SET/MOS hybrid VCO circuits by HSPICE simulator. Simulation results demonstrate that the hybrid circuits can operate well as a VCO at room temperature. The oscillation frequency of the VCO circuits could be as high as 1 GHz, with a -71 dBc/Hz phase noise at 1 MHz offset frequency. The power dissipations are lower than 2 uW. We studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits.

Surface plasmon modulated nano-aperture vertical-cavity surface-emitting laser

We have fabricated surface plasmon modulated nano-aperture vertical-cavity surface-emitting lasers (VCSELs) from common 850 nm VCSELs using focus ion beam etching with Ga+ ion source. The far-field output power is about 0.3 mW at a driving current of 15 mA with a sub-wavelength aperture surrounded by concentric periodic grooves. The enhancement of transmission intensity can be explained by diffraction and enhanced fields associated with surface plasmon. This structure also exhibits beaming properties.

Optimization of mechanically induced long-period fibre grating transmission spectrum

A new double-layer grating template is designed to reduce the out-of-band loss as much as 1.8dB when the loss of LP03 reaches 10.2 dB. Meanwhile, we propose a method to remove the sidelobes in the transmission spectra by the adjustment of the thickness of pressure plates. The plate-thickness-induced shift of resonant wavelength and the attenuation of loss peak intensity when removing sidelobes can be modified by the fibre distance and contact point on the pressure plates.

Systematic considerations for the patterning of photonic crystal devices by electron beam lithography

Photonic crystal devices with feature sizes of a few hundred nanometers are often fabricated by electron beam lithography. The proximity effect, stitching error and resist profiles have significant influence on the pattern quality, and therefore determine the optical properties of the devices. In this paper, detailed analyses and simple solutions to these problems are presented. The proximity effect is corrected by the introduction of a compensating dose. The influence of the stitching error is alleviated by replacing the original access waveguides with taper-added waveguides, and the taper parameters are also discussed to get the optimal choice. It is demonstrated experimentally that patterns exposed with different doses have almost the same edge-profiles in the resist for the same development time, and that optimized etching conditions can improve the wall angle of the holes in the substrate remarkably. (c) 2006 Elsevier B.V. All rights reserved.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.

Dissociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)

A dissociated screw dislocation parallel to the interface was found in the epitaxial layer of the Ge0.17Si0.83 Si(001) system. It is shown that this dissociated screw dislocation which consists of two 30 degrees partials can relieve misfit strain energy, and the relieved misfit energy is proportional to the width of the stacking fault between the two partials.

Advanced superconducting electron cyclotron resonance ion source SECRAL: Design, construction, and the first test result

Superconducting electron cyclotron resonance (ECR) ion source with advanced design in Lanzhou (SECRAL) is a next generation ECR ion source and aims for developing a very compact superconducting ECR ion source with a structure and high performances for highly charged ion-beam production. The ion source was designed to be operated at 18 GHz at initial operation and finally will be extended to 28 GHz. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. At full excitation, this magnet assembly can produce peak mirror fields on the axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. What is different from the traditional design, such as LBNL VENUS and LNS SERSE, is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. SECRAL may open the way for building a compact and high-performance 18-28 GHz superconducting ECR ion source. Very preliminary commissioning results are promising. Detailed design, construction issues and very preliminary test results of the ion source at 18 GHz are presented.

Can the nuclear symmetry potential at supra-saturation densities be negative?

In the framework of an isospin-dependent Boltzmann-Uehling-Uhlenbeck (IBUU) transport model, for the central Au-197 + Au-197 reaction at an incident beam energy of 400 MeV/nucleon, the effect of nuclear symmetry potential at supra-saturation densities on the preequilibrium clusters emission is studied. It is found that for the positive symmetry potential at supra-saturation densities the neutron-to-proton ratio of lighter clusters with mass number A less than or similar to 3 [(n/p)(A less than or similar to 3)] is larger than that of the heavier clusters with mass number A > 3 [(n/p)(A>3)], whereas for the negative symmetry potential at supra-saturation densities the (n/p)(A less than or similar to 3) is smaller than the (n/p)(A>3). This may be considered as a probe of the negative symmetry potential at supra-saturation densities.