Particle transfer and fusion cross-section for super-heavy nuclei in dinuclear system

Within the dinuclear system (DNS) conception, instead of solving the Fokker-Planck equation (FPE) analytically, the master equation is solved numerically to calculate the fusion probability of super-heavy nuclei, so that the harmonic oscillator approximation to the potential energy of the DNS is avoided. The relative motion concerning the energy, the angular momentum and the fragment deformation relaxations is explicitly treated to couple with the diffusion process. The nucleon transition probabilities, which are derived microscopically, are related with the energy dissipation of the relative motion. Thus they are time dependent. Comparing with the analytical solution of FPE at the equilibrium, our time-dependent results preserve more dynamical effects. The calculated evaporation residue cross-sections for one-neutron emission channel of Pb-based reactions are basically in agreement with the known experimental data within one order of magnitude.

Three-body force rearrangement effect on single particle properties in neutron-rich nuclear matter

We extend the Brueckner-Hartree-Fock (BHF) approach to include the three-body force (TBF) rearrangement contribution in calculating the neutron and proton single particle (s.p.) properties in isospin asymmetric nuclear matter. We investigate the TBF rearrangement effect on the momentum-dependence of neutron and proton s.p. potentials, the isospin splitting and especially its density dependence of the neutron and proton effective masses, and the isospin symmetry potential in neutron-rich nuclear matter by adopting the realistic Argonne V-18 two-body nucleon-nucleon interaction supplemented with a microscopic TBF. We find that at low densities, the TBF rearrangement effect is fairly weak, whereas the TBF induces a significant rearrangement effect on the s.p. properties at high densities and large momenta. The TBF rearrangement contribution to s.p. potential is shown to be repulsive, and it reduces considerably the attraction of the BHF s.p. potential. The repulsion from the TBF rearrangement turns out to be strongly momentum dependent at high densities and high momenta. As a consequence, it enhances remarkably the momentum dependence of the proton and neutron s.p. potentials and reduces the neutron and proton effective masses. At low densities, the TBF rearrangement effect on symmetry potential is almost negligible, while at high densities, it enlarges sizably the symmetry potential. At high enough densities, it may even change the high-momentum behavior of symmetry potential. In both cases, with and without including the TBF rearrangement contribution, the predicted neutron effective mass is larger than the proton one in neutron-rich matter within the BHF framework; i.e., the predicted isospin splitting of the proton and neutron effective masses in neutron-rich matter is such that m(n)(*)>= m(p)(*), in agreement with the recent Dirac-BHF predictions. The TBF rearrangement contribution reduces remarkably the magnitude of the proton-neutron effective mass splitting at high densities. At high enough densities, inclusion of the TBF rearrangement contribution even suppresses almost completely the effective mass splitting.

X-ray spectra induced in highly charged Ar-40(q+) interacting with Au surface

By use of optical spectrum technology, the spectra of X-ray induced by highly charged Ar-40(q+) ions interacting with Au surface have been studied. The results show that the argon K alpha X-ray were emitted from the hollow atoms formed below the surface. There is a process of multi-electron exciting in neutralization of the Ar16+ ion, with electronic configuration 1s(2) in its ground state below the solid surface. The yield of the projectile K alpha X-ray is related to its initial electronic configuration, and the yield of the target X-ray is related to the projectile kinetic energy.

X-ray spectroscopy of hollow argon atoms formed on a beryllium surface

The X-rays induced during interaction of highly charged argon ions with a beryllium surface are reported. It is found that the K shell X-ray yield of single particle during interaction of hydrogen-like argon ions was 3.6 x 10(-3), which is five orders more than that of heliumlike argon ions. Moreover, due to the screening the 2s electron, no K X-ray was emitted during interaction of lithium-like argon ions with the beryllium surface. It is also found that the X-ray spectrum induced by Ar17+ interacting with residual gases is very different from that induced by Ar17+ interacting with the surfaces, that provided an experimental evidence for the existence of the hollow atoms below the surface.

Electron emission induced by the interaction of highly charged ions Pb-207(q+) (24 <= q <= 36) with solid surface of Si(110)

The electron emission induced by highly charged ions Pb-207(q+) (24 <= q <= 36) interacting with Si(110) surface is reported. The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q, incidence angle psi and impact energy E. In fitting the experimental data we found a nearly 1/tan psi dependence of Y. Theoretical analysis shows that these processes are closely related to the process of potential electron emission based on the classical over-the-barrier model.

An online monitor ionization chamber used in particle therapy

The clinical trials of tumor therapy using heavy ions beam C-12 are now in progress at Institute of Modem Physics in Lanzhou. In order to achieve the precise radiotherapy with the high energy C-12 beam in active pencil beam scanning mode, we have developed an ionization chamber(IC) as an online monitor for beam intensity and also a dosimeter after calibration. Through the choosing of working gas and voltage, optimizing of the electrics and the read-out system, calibrating the linearity, the detector system provide us one of the simple and highly reliable way to monitoring the beam during the active pencil beam scanning treatments. The measurement results of this detector system show that it could work well under the condition of high energy C-12 beam in active pencil beam scanning mode.

Intense beam production of highly charged heavy ions by the superconducting electron cyclotron resonance ion source SECRAL (invited)

There has been increasing demand to provide higher beam intensity and high enough beam energy for heavy ion accelerator and some other applications, which has driven electron cyclotron resonance (ECR) ion source to produce higher charge state ions with higher beam intensity. One of development trends for highly charged ECR ion source is to build new generation ECR sources by utilization of superconducting magnet technology. SECRAL (superconducting ECR ion source with advanced design in Lanzhou) was successfully built to produce intense beams of highly charged ion for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28 GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. An innovative design of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. For 28 GHz operation, the magnet assembly can produce peak mirror fields on axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. During the commissioning phase at 18 GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.5 kW by two 18 GHz rf generators. It demonstrates the performance is very promising. Some record ion beam intensities have been produced, for instance, 810 e mu A of O7+, 505 e mu A of Xe20+ 306 e mu A of Xe27+, and so on. The effect of the magnetic field configuration on the ion source performance has been studied experimentally. SECRAL has been put into operation to provide highly charged ion beams for HIRFL facility since May 2007.

用于粒子探测器的CMOS FET采样保持电路的设计与仿真(英文)；Design and Simulation of Track/Hold Circuit with CMOS FET for Particle Detector

介绍了一个峰保持电路。该电路适用于silicon strip,Si(Li),CdZn Te and CsI等探测器,实现采样-保持功能。已成功进行了基于CMOSFET的采样-保持电路的设计和仿真,通过使用Proteus的PSPICE仿真器和BSIMV3.3模型参数完成了电路性能的仿真。同时,实现了采样时间可在60ns到4.44s范围内进行选择,该电路具有较好的线性。

粒子微束辐射生物学效应研究进展；Advances in Radiobiological Effect Studies Using a Particle Microbeam

粒子微束能够将单个或精确数目的粒子定点、定位射入靶目标,使得辐射生物学效应的研究由定性走向了定量。本文介绍了辐射目标靶研究,以及低剂量辐射生物学效应、低剂量辐射旁效应和重离子微束辐射生物学效应的研究进展。现代精确粒子微束的建立,有助于进一步研究低剂量辐射和空间辐射等生物学效应。

Theoretical study on electron impact excitation of highly charged Ne-like ions

The electron impact excitation (EIE) cross sections from the ground state to all of the 2s(2)2p(5)3l and 2s2p(6)3l(l=s, p, d) states along the Ne-like isoelectronic sequence of ions (Z = 50-57) have been calculated by using the multiconfiguration Dirac-Fock package GRASP92 and the fully relativistic distorted-wave program REIE06. In the calculations, the relativistic effects and electron correlation effects are considered systematically. Based on those calculations, the EIE cross sections along the Ne-like isoelectronic sequence of ions for different incident electron energies are discussed, and some important conclusions are drawn. We also study the influence of the correlation effects on the values of the 3C/3D line-intensity ratio [3C: (2p(1/2)3d(3/2))(1) -> 2s(2)2p(6) S-1(0), 3D: (2p(3/2)3d(5/2))(1) -> 2s(2)2p(6) S-1(0)] along the Ne-like sequence. A comparison is made between the present results and previous theoretical calculations and experimental results for the EIE cross sections in Ba-46 (+) ions, and a good agreement is obtained.

Slow highly charged ions induced electron emission from clean Si surfaces

The electron emission yields from the interaction of slow highly charged ions (SHCI) He2+, O2+ and Ne2+ with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E-p/M-p, ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O2+ and Ne2+) than for light ion (He2+). For O2+ and Ne2+, gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O2+ and Ne2+ between lower and higher projectile kinetic energy.

反冲原子对低速离子轰击Si表面时电子发射产额的影响；Slow highly charged ions induced electron emission from clean Si surfaces

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)>γ(Ne)>γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.

低速高电荷态重离子在C_(60)薄膜中引起的势效应研究；Studies of Slow Highly-charged Ion Irradiated C_(60) Films

为了研究低速高电荷态离子在C60薄膜中引起的势效应,用能量为200keV的高电荷态Xen+(n=3,10,13,15,17,20,22,23)离子辐照了C60薄膜。用原子力显微镜(AFM)和Raman散射技术分析了辐照过程中高电荷态Xen+离子所储存势能在C60薄膜中引起的效应,即势效应。AFM分析结果表明,辐照C60薄膜的表面粗糙度随辐照Xen+离子电荷态(即势能)的增加而减小,揭示了势效应的存在。而Raman分析结果表明,由于Xe离子的动能远大于其所储存的势能,因此,尽管有表面势效应的影响,但在Raman分析的深度范围内,弹性碰撞还是主导了C60薄膜的损伤过程。

X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究；X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.