Cubic InGaN grown by MOCVD

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by Xray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

Ge related defect energy and microcavity effect in GaN epitaxial layer

Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photoluminescence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

GaN epilayers on sapphire (0001) substrates were grown by the gas source molecular beam epitaxy (GSMBE) method using ammonia (NH,) gas as the nitrogen source. Properties of gallium nitride (GaN) epilayers grown under various growth conditions were investigated. The growth rate is up to 0.6 mu m/h in our experiments. Cathodoluminescence, photoluminescence and Hall measurements were used to characterize the films. It was shown that the growth parameters have a significant influence on the GaN properties. The yellow luminescence was enhanced at higher growth temperature. And a blue emission which maybe related to defects or impurity was observed. Although the emission at 3.31 eV can be suppressed by a low-temperature buffer layer, a high-quality GaN epilayer can be obtained without the buffer layer. (C) 1998 Elsevier Science B.V. All rights reserved.

Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K

AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition system (MOCVD). High temperature A1N (HT-A1N) interlayer was inserted between AlxGa1-xN layer and GaN template to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-A1N interlayer was much improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much reduced for AlGaN layer with HT-A1N interlayer.

Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer

Hexagonal GaN films (similar to 3 mu m) were grown on 3c-SiC/Si(111) and carbonized Si(111) substrates using a thick AlN buffer Cracks are observed on the surface of the GaN film grown on the carbonized Si(111), while no cracks are visible on the 3c-SiC/Si(111). XRD exhibits polycrystalline nature of the GaN film grown on the carbonized Si(111) due to poorer crystalline quality of this substrate. Raman spectra reveal that all GaN layers are under tensile stress, and the GaN layer grown on 3c-SiC/Si(111) shows a very low stress value of sigma(xx) = 0.65 Gpa. In low-temperature Photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of Si impurities from the decomposition of SiC.

Structure and visible luminescence of ZnO nanoparticles

ZnO nanoparticles were synthesized in ethanolic solution using a sol-gel method. The structural and optical properties were investigated by X-ray diffraction, transmission electron microscopy, UV absorption, and photoluminescence. After annealing at 200 degrees C, the particle size is increased and the peak of defect luminescence in the visible region is changed. A yellow emission was observed in the as-prepared sample and a green emission in the annealed sample. The change of the visible emission is related to oxygen defects. Annealing in the absence of oxygen would increase oxygen vacancies. (c) 2006 Elsevier Ltd. All rights reserved.

Color center conversion by femtosecond pulse laser irradiation in LiF : F-2 crystals

We report the observation of intense spontaneous emission of green light from LiF:F-2:F-3(+) centers in active channel waveguides generated in lithium fluoride crystals by near-infrared femtosecond laser radiation. While irradiating the crystal at room temperature with 405 nm light from a laser diode, yellow and green emission was seen by the naked eye. Stripe waveguides were fabricated by translating the crystal along the irradiated laser pulse, and their guiding properties and fluorescence spectra at 540 nm demonstrated. This single-step process inducing a waveguide structure offers a good prospect for the development of a waveguide laser in bulk LiF crystals.

近60年我国土壤侵蚀科学研究进展

在系统总结我国近60年土壤侵蚀科学研究取得的成就的基础上,通过分析与整合,重点介绍全国土壤侵蚀时空特征与动态变化、土壤侵蚀过程及其调控机制、黄河泥沙来源与粗泥沙集中来源区的界定、风力侵蚀机制及沙漠化防治、侵蚀环境演变与调控等5个对土壤侵蚀学科发展有重大意义的进展,提出了我国土壤侵蚀学科亟待加强的3个领域。

工程建设弃土弃渣水土流失过程试验研究

弃土弃渣是工程建设产生的最主要地面组成物质之一。采用野外放水冲刷试验方法,对黄河班多水电站工程区弃土弃渣水土流失过程进行了研究。(1)不同供水流量下,产流率随供水过程的动态变化整体呈增长趋势,可用幂函数方程描述,开始产流后的5 min内产流过程的变化幅度较大,随后较为平缓,并趋于基本稳定;(2)不同供水流量下,产沙率随供水历时的增长而减少,可用对数相关方程描述,小流量下变化过程波动较小,大流量下变化幅度较大;(3)不同供水流量下,含沙量随着供水历时的增长而减少,可用对数相关方程描述。各流量下的变化趋势基本一致;(4)次产流深、次产沙模数皆随供水流量的增大而增加,增加趋势基本相同,皆可用对数相关方程描述。平均含沙量随供水流量的增大先增加后减小,临界值为7.17 L/min,可用抛物线相关方程描述;(5)次产沙模数随次产流深的增大而增加,表现为很好的正相关关系,可用对数相关方程来描述。

不同最小控制时段约束下黄河天然径流量变化阶段性

阶段性是描述河流径流量丰枯变化持续长度的主要特征。在年际变化较大的长时间序列中,通过确定不同最小控制时段,可以把高频变化的年份和时段有效合并,从而更好描述不同流量的持续特征。在划分径流量丰枯连续自然阶段的基础上,根据最小控制时段,对相邻阶段进行逐步合并,提取并分析了黄河三门峡水文站1470-1997年528 a的逐年天然径流量阶段性变化特征。分析表明,黄河天然径流量多年平均值为511.81×108m3,变差系数为0.20,年际变化非常剧烈;随着最小控制时段的增加,阶段数呈指数函数迅速减少;每一阶段平均、最小和最大阶段长度呈显著的线性增加趋势;各阶段天然径流量的差异也逐步减小。当最小控制时段为5,10,20,30 a时,可以划分为60,24,15,9个阶段,相应的平均阶段长度也分别为8.7,21.7,27.4,57.9 a,阶段最大值与最小值的极差分别是平均值的71.8%,62.4%,47.6%和13.7%。

基于景观格局变化评价的梯级水电开发规划方案研究

根据景观生态学理论,借助地理信息系统工具,采用定量的方法分析工程景观格局状况,通过建立水电开发建设规划方案的景观格局变化评价的指标体系和评价方法,研究水电开发规划方案对区域景观格局的影响。本方法应用于黄河上游黑山峡河段水电开发建设方案析分析。结果表明:不同规划方案实施后对原有生态环境均产生了一定影响。通过对不同方案与研究区域生态现状进行灰色关联分析,红山峡、五佛、小观音和大柳树4个坝址均修建低坝的方案的景观格局指数最高,研究区域景观生态风险最小。最终确定该方案为最优方案,该方案对区域原有生态体系性质和功能影响较小。

黄土高原水土保持政策演变

水土保持政策是指导和促进水土保持开展的主要社会驱动力之一。新中国成立以来,黄土高原水土保持经过探索治理、重点治理、全民治理、小流域综合治理和预防为主、依法防治等5个阶段。在不同阶段,水土保持目标和任务、治理主体、政策的针对性和治理主导措施侧重等均有变化。在分析政策演变的基础上,提出了针对新时期水土保持特点的政策建议。

黄河中游地区年径流对土地利用变化时空响应分析

以黄河中游河龙区间为研究区,以水土流失综合治理及生态环境建设导致的土地利用/覆被变化为背景,采用非参数统计法,基于区内38个水文站20世纪50年代至2000年水文数据,分析流域年径流对土地利用/覆被变化响应的时空变异特征,估算影响因素贡献率。结果表明:其中29条流域年径流量呈显著减少趋势,变率为0.17~2.61 mm/a;28条流域年径流量具有显著跃变时间,无定河流域各水文站跃变时间多在1970—1973年间,其余则多为1978—1985年,最晚为1994年;在5%、50%和95%的发生频率上,跃变前后时段年径流量减少幅度以30%~60%普遍,最大分别为73.2%、63.5%和69.7%;河龙区间整体呈显著减少趋势,变率为0.79 mm/a,跃变时间发生在1979年,3个频率上的减少幅度分别为46.5%、42.4%和24.1%。估算的11条流域中有9条土地利用/覆被变化等人类活动对流域径流减少影响程度超过50%。水土保持措施面积的增加,尤其淤地坝等水利水保工程措施的持续修建,对区域地表径流变化具有明显影响。

黄土高原六盘山生态经济圈功能区规划研究

六盘山区位于黄河中上游,是黄土高原西部天然生态屏障和水源涵养区,在中国生态环境建设中具有重要战略地位。本区土地资源丰富,生态环境洁净,旱作农业潜力大,草畜业兴旺。六盘山生态经济圈规划了4个功能区和7大特色农业基地产业,以六盘山国家自然保护区为中心,加大退耕造林种草与管护力度,到2015年基本修复六盘山区受损的森林生态系统和灌丛草原植被;以旱作农业技术体系为支撑,建立高效可持续发展的生态农业系统和绿色农牧产品基地,为经济社会发展和新农村建设提供良好的生态环境和农业基础。