Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
| Data(s) |
2008
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| Resumo |
AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition system (MOCVD). High temperature A1N (HT-A1N) interlayer was inserted between AlxGa1-xN layer and GaN template to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-A1N interlayer was much improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much reduced for AlGaN layer with HT-A1N interlayer. AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition system (MOCVD). High temperature A1N (HT-A1N) interlayer was inserted between AlxGa1-xN layer and GaN template to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-A1N interlayer was much improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much reduced for AlGaN layer with HT-A1N interlayer. zhangdi于2010-03-09批量导入 Made available in DSpace on 2010-03-09T02:11:56Z (GMT). No. of bitstreams: 1 693.pdf: 482653 bytes, checksum: 9f388021429de0b96a8304e40155a22d (MD5) Previous issue date: 2008 SPIE.; Chinese Opt Soc. [Yan, Jianchang; Wang, Junxi; Liu, Naixin; Liu, Zhe; Li, Jinmin] Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Yan, JC ; Wang, JX ; Liu, NX ; Liu, Z ; Li, JM .Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K .见：SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: K8410-K8410 |
| Palavras-Chave | #光电子学 #AlGaN #GaN template #A1N interlayer #MOCVD #crack #interference fringes |
| Tipo |
会议论文 |
