On chip plasmonic enhanced silicon Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip plasmonic enhanced Schottky detector for telecom wavelengths based on the internal photoemission process. This CMOS compatible device may serve as a promising alternative to the Si-Ge detectors. © 2012 OSA.

Investigation of the Young's modulus and thermal expansion of amorphous titania-doped tantala films

The current generation of advanced gravitational wave detectors utilize titania-doped tantala/silica multilayer stacks for their mirror coatings. The properties of the low-refractive-index silica are well known; however, in the absence of detailed direct measurements, the material parameters of Young's modulus and coefficient of thermal expansion (CTE) of the high refractive index material, titania-doped tantala, have been assumed to be equal to values measured for pure tantala coatings. In order to ascertain the true values necessary for thermal noise calculations, we have undertaken measurements of Young's modulus and CTE through the use of nanoindentation and thermal-bending measurements. The measurements were designed to assess the effects of titania doping concentration and post-deposition heat-treatment on the measured values in order to evaluate the possibility of optimizing material parameters to further improve thermal noise in the detector. Young's modulus measurements on pure tantala and 25% and 55% titania-doped tantala show a wide range of values, from 132 to 177 GPa, dependent on both titania concentration and heat-treatment. Measurements of CTE give values of (3.9 +/- 0.1) x 10^-6 K^-1 and (4.9 +/- 0.3) x 10^-6 K^-1 for 25% and 55% titania-doped tantala, respectively, without dependence on post-deposition heat-treatment.

On chip plasmonic enhanced silicon schottky detector for telecom wavelengths

We demonstrate an integrated on-chip plasmonic enhanced Schottky detector for telecom wavelengths based on the internal photoemission process. This CMOS compatible device may serve as a promising alternative to the Si-Ge detectors. © 2011 Optical Society of America.

Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10-10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications. © 2013 IEEE.

A dual mode SOI CMOS MEMS based thermal conductivity and IR absorption gas sensor

Design, FEM modelling and characterization of a novel dual mode thermal conductivity and infrared absorption sensor using SOI CMOS technology is reported. The dual mode sensing capability is based on the temperature sensitivity and wideband infrared radiation emission of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. Infrared detectors usually use thermopiles in addition to a separate IR source. A single highly responsive dual mode source and sensing element targeting not only low molecular mass gases but also greenhouse gases, while consuming 40 mW power at 700°C in synthetic air, thus makes this sensor particularly viable for battery powered handheld devices. © 2013 IEEE.

Design and modeling of an integrated device for acoustic resonance spectroscopy

This paper investigates the design and modelling of an integrated device for acoustic resonance spectroscopy (ARS). Miniaturisation of such platforms can be achieved using MEMS technology thereby enabling scaling of device dimensions to investigate smaller specimens while simultaneously operating at higher frequencies. We propose an integrated device where the transducers are mounted in close proximity with the specimen to be analysed (e.g. by integrating ultrasound transducers within a microfluidic channel). A finite element (FE) model and a simplified analytical model have been constructed to predict the acoustic response of a sample embedded in such a device configuration. A FE simulation is performed in COMSOL by embedding the piezoelectric transducers in representative fluid media. Resonant frequencies associated with the measurement can be extracted from this data. The response of various media modelled through FEA matches with analytical predictions for a range of biological media. A variety of biological media may be identified by using the measured resonant frequencies as a signature of relevant physical characteristics. The paper establishes the modelling basis of an integrated acoustic resonant spectrometer that is then applied to examine the impact of geometrical scaling on system resolution. © 2013 IEEE.

The neural signature of escalating frustration in humans.

Mammalian studies show that frustration is experienced when goal-directed activity is blocked. Despite frustration's strongly negative role in health, aggression and social relationships, the neural mechanisms are not well understood. To address this we developed a task in which participants were blocked from obtaining a reward, an established method of producing frustration. Levels of experienced frustration were parametrically varied by manipulating the participants' motivation to obtain the reward prior to blocking. This was achieved by varying the participants' proximity to a reward and the amount of effort expended in attempting to acquire it. In experiment 1, we confirmed that proximity and expended effort independently enhanced participants' self-reported desire to obtain the reward, and their self-reported frustration and response vigor (key-press force) following blocking. In experiment 2, we used functional magnetic resonance imaging (fMRI) to show that both proximity and expended effort modulated brain responses to blocked reward in regions implicated in animal models of reactive aggression, including the amygdala, midbrain periaqueductal grey (PAG), insula and prefrontal cortex. Our findings suggest that frustration may serve an energizing function, translating unfulfilled motivation into aggressive-like surges via a cortical, amygdala and PAG network.

Acoustic signals of Chinese alligators (Alligator sinensis): Social communication

This paper reports the first systematic study of acoustic signals during social interactions of the Chinese alligator (Alligator sinensis). Sound pressure level (SPL) measurements revealed that Chinese alligators have an elaborate acoustic communication system with both long-distance signal-bellowing-and short-distance signals that include tooting, bubble blowing, hissing, mooing, head slapping and whining. Bellows have high SPL and appear to play an important role in the alligator's long range intercommunion. Sounds characterized by low SPL are short-distance signals used when alligators are in close spatial proximity to one another. The signal spectrographic analysis showed that the acoustic signals of Chinese alligators have a very low dominant frequency, less than 500 Hz. These frequencies are consistent with adaptation to a habitat with high density vegetation. Low dominant frequency sound attenuates less and could therefore cover a larger spatial range by diffraction in a densely vegetated environment relative to a higher dominant frequency sound. (C) 2007 Acoustical Society of America.

Electron microscopic examination of the viromatrix of Rana grylio virus in a fish cell line

Rana grylio virus (RGV), a Ranavirus belonging to the family Iridoviridae, assembles in the viromatrix which is a factory for viral genome replication and particle assembly. Ultrastructural studies of the viromatrix will clarify the pathway of assembly. The viromatrix and quantitative changes in RGV infected epithelipma papulosum cyprini (EPC) cells, one of fish cell lines, were studied by electron microscopy. It was shown that viromatrices were adjacent to the nucleus, and the electron density was lower than that of the surrounding cytoplasm. The viromatrix contained virus particles with different forms, electron-dense materials and amorphous structures which included tubules and membranous materials. Tubules were often observed in direct continuity with empty capsids. Several bundles of intermediate filaments were seen alongside the viromatrix and crystalline aggregates. Large clusters of mitochondria occurred in proximity to viromatrix. A total of 990 cells profiles were examined. The results showed that 394 cells contained viromatrix: 89.3% contained one, and 10.7% contained two to four viromatrices. The number of viromatrices increased gradually and reached a peak at 16 h p.i. The viromatrix area at 24 h p.i. increased up to 7.4 +/- 0.69 mu m(2) which was three-times lower than that at 6 h p.i. The number of empty capsids within viromatrix was generally more than that of "full" particles at different time points, and there was a strong positive correlation between them. (c) 2005 Elsevier B.V. All rights reserved.

An analysis of electrode patterns in capacitive touch screen panels

In the design of capacitive touch-screen panels, electrodes are patterned to improve touch sensitivity. In this paper, we analyze the relationship between electrode patterns and touch sensitivity. An approach is presented where simulations are used to measure the sensitivity of touch-screen panels based on capacitance changes for various electrode patterns. Touch sensitivity increases when the touch object is positioned in close proximity to fringing electric fields generated by the patterned electrodes. Three new electrode patterns are proposed to maximize field fringing in order to increase touch sensitivity by purely electrode patterning means. Simulations showed an increased touch sensitivity of up to 5.4%, as compared with the more conventional interlocking diamonds pattern. Here, we also report empirical findings for fabricated touch-screen panels. © 2005-2012 IEEE.

Vulnerability assessment of buildings subject to tunnel-induced settlements: the influence of orientation and position of the building

The assessment of settlement induced damage on buildings during the preliminary phase of tunnel excavation projects, is nowadays receiving greater attention. Analyses at different levels of detail are performed on the surface building in proximity to the tunnel, to evaluate the risk of structural damage and the need of mitigation measures. In this paper, the possibility to define a correlation between the main parameters that influence the structural response to settlement and the potential damage is investigated through numerical analysis. The adopted 3D finite element model allows to take into account important features that are neglected in more simplified approaches, like the soil-structure interaction, the nonlinear behaviour of the building, the three dimensional effect of the tunnelling induced settlement trough and the influence of openings in the structure. Aim of this approach is the development of an improved classification system taking into account the intrinsic vulnerability of the structure, which could have a relevant effect on the final damage assessment. Parametric analyses are performed, focusing on the effect of the orientation and the position of the structure with respect to the tunnel. The obtained results in terms of damage are compared with the Building Risk Assessment (BRA) procedure. This method was developed by Geodata Engineering (GDE) on the basis of empirical observations and building monitoring and applied during the construction of different metro lines in urban environment. The comparison shows a substantial agreement between the two procedures on the influence of the analysed parameters. The finite element analyses suggest a refinement of the BRA procedure for pure sagging conditions.

Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.

Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450 degrees C and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m GaSb film is grown under optimized conditions.