Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.

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Made available in DSpace on 2010-08-17T01:07:27Z (GMT). No. of bitstreams: 1 Growth and Characterization of GaSb-Based Type-II InAs-GaSb Superlattice Photodiodes for Mid-Infrared Detection.pdf: 853722 bytes, checksum: bccab499133fc4e20a423dbe03bc0a55 (MD5) Previous issue date: 2010

Supported by the National Natural Science Foundation of China under Grant No 60625405, and the National Basic Research Program of China under Grant Nos 2007CB936304 and 2010CB327601.

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Supported by the National Natural Science Foundation of China under Grant No 60625405, and the National Basic Research Program of China under Grant Nos 2007CB936304 and 2010CB327601.