Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450 degrees C and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m GaSb film is grown under optimized conditions.

National Natural Science Foundation of China 60607016 60625405National Basic Research Programme of China National High Technology Research and Development Programme of China Supported by the National Natural Science Foundation of China under Grant Nos 60607016 and 60625405, the National Basic Research Programme of China, and the National High Technology Research and Development Programme of China.