Some empirical-theoretical considerations of uranium nitride in zirconium /

In this paper our method is critically examined to obtain a better understanding of the complexities of the system.

Thin films of gallium arsenide on low-cost substrates : final technical report for period July 5, 1976-December 5, 1978 /

"Work Performed Under Contract No. AC03-79ET20435."

Demand bibliography : gallium arsenide /

"Results from a search of the technical report database over a 10-year period ... references cover only unclassified, unlimited document references with abstracts."

A novel method for the production of aluminium nitride

A method has been developed to produce thick (> 400 mu m) AlN surface layers oil aluminium plates at 540 degrees C, under nitrogen at atmospheric pressure. A critical element of the process is the use of Mg powder placed in close proximity to the Al plate surface. The Mg reduces/disrupts the natural, protective oxide film on the Al surface. The nitride layers form through two distinct modes, one growing outward from the Al plate surface and the other growing into the Al. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Characteristics of low temperature PECVD silicon nitride for MEMS structural materials

Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.