Respuesta eléctrica de películas gruesas del sistema SnO2-TiO2, conformadas con polvos cerámicos obtenidos a través del método pechini

Tin oxide is the compound more used in the gas sensor production, mainly to reduce gases like CO and H2. Their electrical properties are strongly dependent of its surface. For this is of great importance to synthesize nanoscale tin oxide particles to use they later in the films conformation. The synthesis of SnO2-TiO2 nanoparticles by polymeric precursor method is reported in this work. The particles were characterized by DTA/TG, FT-IR, XRD and SEM. Also, the electrical response of thick films measured under oxygen and carbon monoxide atmospheres is was analyzed.

Dye incorporation in polyphosphate gels: synthesis and theoretical calculations

ABSTRACT: In this work we described theoretical calculations on the electronic structure and optical properties of the dyes crystal violet and malachite green based in semiempirical methods (Parametric Method 3 and Intermediate Neglect of Differential Overlap / Spectroscopic - Configuration Interaction) and the synthesis of a new hybrid material based upon the incorporation of these dyes in an aluminum polyphosphate gel network. The samples are nearly transparent, free-standing thick films. The optical properties of the entrapped dyes are sensitive to chemical changes within the matrix caused either by gel aging or external stimulli such as exposition to acidic and basic vapors that can percolate within the matrix. Our theoretical modeling is in good agreement with the experimental results for the dyes.

Hidroxicarbonato de gadolínio ativado com európio ou térbio trivalentes como precursor de óxidos, oxissulfetos e silicatos luminescentes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Desenvolvimento de sistemas multifuncionais baseados em híbridos orgânico-inorgânicos dopados

Pós-graduação em Química - IQ

Tetraethylortossilicate plasma thin film with hydrophilic and hydrophobic characteristics: Use on passive mixers

This work aims to obtain plasma thin film composites with hydrophobic/hydrophilic alternated regions, which are useful for the production of miniaturized mixers. These regions were acquired by two different strategies: either the codeposition of TEOS and HFE plasma thin films or the exposition of TEOS plasma films to ultraviolet radiation (UVA and UVC). These films were characterized by several chemical and physical techniques. The refractive indexes vary from 1.4 to 1.7; infrared and photoelectron spectroscopy detect Si-O-Si and CHn species. Silicone-like structures with high or low number of amorphous carbon microparticles and with fluorinated organic clusters were produced. Cluster dimensions were in the 1-5 mm range and they are made of graphite or COF (carbon/oxygen/fluorine) compounds. Scanning electron and optical microscopy showed rough surfaces. Water contact angles were 90º; however, for TEOS films that value changed after 6 hr of UVC exposure. Moreover, after UV exposure, organic polar compounds could be adsorbed in those films and water was not. The passive mixer performance was simulated using the FemLab 3.2® program and was tested with 20 nm thick films on a silicon wafer, showing the capacity of these films to be used in such devices.

Estudo e desenvolvimento de filmes espessos de CeO2 obtidos por tape casting

Tape Casting proved to be an effective method for the production of thick films of CeO2 pure and doped with La. For this study, the nanoparticles used to form the slurry were synthesizes by the H-M method, at 100°C for 8 minutes, using KOH mineralizer. The slurry was made in aqueous solvent, requiring optimal control of surroundings conditions so that the produced tape has conditions to be studied. However, there's no toxicity or flammability in the film made by such solvent, being pleasing to the environment. The structural, optical and electrical properties of the films obtained by the Tape Casting process were studied by the methods of X-ray diffraction, scanning electron microscopy, specific surface area, Ultraviolet-visible spectroscopy and voltage-current measures, varying the electric field and frequency. From the results obtained by laboratory experiments, based on the literature, it was possible to reveal and understand some CeO2 features pure and doped with La

Estudo e desenvolvimento de filmes espessos de CeO2 obtidos por tape casting

Tape Casting proved to be an effective method for the production of thick films of CeO2 pure and doped with La. For this study, the nanoparticles used to form the slurry were synthesizes by the H-M method, at 100°C for 8 minutes, using KOH mineralizer. The slurry was made in aqueous solvent, requiring optimal control of surroundings conditions so that the produced tape has conditions to be studied. However, there's no toxicity or flammability in the film made by such solvent, being pleasing to the environment. The structural, optical and electrical properties of the films obtained by the Tape Casting process were studied by the methods of X-ray diffraction, scanning electron microscopy, specific surface area, Ultraviolet-visible spectroscopy and voltage-current measures, varying the electric field and frequency. From the results obtained by laboratory experiments, based on the literature, it was possible to reveal and understand some CeO2 features pure and doped with La

Thallium Bromide Deposited Using Spray Coating

Spray coating was used to produce thallium bromide samples on glass substrates. The influence of several fabrication parameters on the final structural properties of the samples was investigated. Substrate position, substrate temperature, solution concentration, carrying gas, and solution flow were varied systematically, the physical deposition mechanism involved in each case being discussed. Total deposition time of about 3.5 h can lead to 62-mu m-thick films, comprising completely packed micrometer-sized crystalline grains. X-ray diffraction and scanning electron microscopy were used to characterize the samples. On the basis of the experimental data, the optimum fabrication conditions were identified. The technique offers an alternative method for fast, cheap fabrication of large-area devices for the detection of high-energy radiation, i.e., X-rays and gamma-rays, in medical imaging.

Multilaminati piezoelettrici a gradiente funzionale

Aim of this thesis was the production of porosity-graded piezoelectric ceramics for ultrasonic applications by tape casting and screen printing. The study and optimization of each single step of the tape casting process allowed to produce flat and crack-free multilayers of Pb0.988(Zr0.52Ti0.48)0.976Nb0.024O3 (PZTN) of uniform and graded porosity. The multilayers of thickness ranging between 400 and 800 µm were produced stacking optimized green layers with different amount of pore former. The functionally graded materials showed porosity ranging between 10 and 30% with piezoelectric properties suitable for the specific ultrasonic applications. Screen printing inks of PZTN for deposition onto four different substrates were studied and optimized. Thick films with thickness ranging between 4 and 20 µm were produced tailoring the screen printing parameters and number of depositions.

The performance of poly(styrene)-block-poly(2-vinyl pyridine)-block- poly(styrene) triblock copolymers as pH-driven actuators

Poly(styrene)-block-poly(2-vinyl pyridine)-block-poly(styrene) (PS-b-P2VP-b-PS) triblock copolymers were synthesised by anionic polymerisation. Thick films were cast from solution and their structure analysed by small angle X-ray scattering (SAXS). Longer annealing times led to more ordered structures whereas short evaporation times effectively "lock" the polymer chains in a disordered state by vitrification. Well-ordered structures not only provide an isotropic network, which reduces localised stress within the material, but are also essential for fundamental studies of soft matter because their activity on the molecular scale must be analysed and understood prior to their use in technological applications. Well-characterised PS-b-P2VP-b-PS materials have been coupled to a pH-oscillating reaction and their potential application as responsive actuators is discussed. This journal is © The Royal Society of Chemistry.

Cálculo de constantes ópticas de películas delgadas de Cu3BiS3 a través del método de Wolfe

Se calculó la obtención de las constantes ópticas usando el método de Wolfe. Dichas contantes: coeficiente de absorción (α), índice de refracción (n) y espesor de una película delgada (d ), son de importancia en el proceso de caracterización óptica del material. Se realizó una comparación del método del Wolfe con el método empleado por R. Swanepoel. Se desarrolló un modelo de programación no lineal con restricciones, de manera que fue posible estimar las constantes ópticas de películas delgadas semiconductoras, a partir únicamente, de datos de transmisión conocidos. Se presentó una solución al modelo de programación no lineal para programación cuadrática. Se demostró la confiabilidad del método propuesto, obteniendo valores de α = 10378.34 cm−1, n = 2.4595, d =989.71 nm y Eg = 1.39 Ev, a través de experimentos numéricos con datos de medidas de transmitancia espectral en películas delgadas de Cu3BiS3.

How thick SiO2 cap layer is needed to achieve strong visible photoluminescence from SiO2-buffered SiNx films?

The effect of a SiO2 nanolayer and annealing temperature on the UV/visible room-temperature photoluminescence (PL) from SiNx films synthesized by rf magnetron sputtering is studied. The PL intensity can be maximized when the SiO2 layer is 510 nm thick at 800 °C annealing temperature and only 2 nm at 1000 °C. A compositionstructureproperty analysis reveals that the PL intensity is directly related to both the surface chemical states and the content of the SiO and SiN bonds in the SiNx films. These results are relevant for the development of advanced optoelectronic and photonic emitters and sensors. © 2010 Elsevier B.V. All rights reserved.

Microscopy for the detection, identification and quantification of malaria parasites on stained thick and thin blood films in research settings

Summary This manual was developed to guide a move towards common standards for undertaking and reporting research microscopy for malaria parasite detection, identification and quantification. It contains procedures based on agreed quality assurance standards for research malaria microscopy defined at a consultation of: TDR, the Special Programme for Research and Training in Tropical Diseases; the Worldwide Antimalarial Resistance Network (WWARN), United Kingdom; the Foundation for Innovative New Diagnostics (FIND), Switzerland; the Centers for Disease Control and Prevention (CDC), USA; the Kenya Medical Research Institute (KEMRI) and later expanded to include Amref Health Africa (Kenya); the Eijkman-Oxford Clinical Research Unit (EOCRU), Indonesia; Institut Pasteur du Cambodge (IPC); Institut de recherche pour le Développement (IRD), Senegal; the Global Good and Intellectual Ventures Laboratory (GG-IVL), USA; the Mahidol-Oxford Tropical Medicine Research Unit (MORU), Thailand; Queensland University of Technology (QUT), Australia, and the Shoklo Malaria Research Unit (SMRU), Thailand. These collaborating institutions commit to adhering to these standards in published research studies. It is hoped that they will form a solid basis for the wider adoption of standardized reference microscopy protocols for malaria research.

Thick PECVD Germanium films for MEMS Application

Plasma enhanced chemical vapour deposition (PECVD) of thick germanium (Ge) films (similar to 1 mu m) on silicon dioxide (SiO2) at low temperatures is described. A diborane pretreatment on SiO2 films is done to seed the Ge growth, followed by the deposition of thick Ge films using germane (GeH4) and argon (Ar). Further, the effect of hydrogen (H-2) dilution on the deposition rate is also investigated. The film thickness and morphology is characterized using SEM. Use of high RF power and substrate temperature show increased deposition rate. EDS analysis indicates that these films contain 97-98 atomic percentage of Ge. A recipe for anisotropic dry etching of the deposited Ge films with 10nm/ min etch rate is also suggested.