Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

新一代无机相变光存储材料研究进展

光存储技术正在向着大容量、高数据传输率的方向发展。新一代的光存储将从目前广泛使用的红光波段向蓝光波段发展。综述了可用于新一代高密度光存储无机相变材料的研究现状和最新进展，并对今后的发展前景进行了简要的展望。

Superresolution by three-zone pure phase plate with 0, pi, 0 phase variation

Superresolution is very important in imaging and optical storage systems, and has attracted much attention. In this article, concentric three-zone phase plate with 0, pi, 0 phase variation has been investigated numerically to show that this kind of phase plate can be used to obtain three-dimensional superresolution. In addition, the number of intensity maximum, focal depth, focal shift, full-width half-maximum, and relative intensity of side lobe are listed for different radii of the phase zones, which paves the way for design of the phase plate. Therefore, one can choose values of radii for desired intensity distribution in focal region, such as for the purpose of radial superresolution with high focal depth in optical storage. (c) 2006 Elsevier Ltd. All rights reserved.

纳米光存储薄膜结构的光学性质

近场超分辨纳米薄膜结构可以突破衍射极限实现纳米尺寸信息存储,是下一代海量存储技术的重要方案之一,也是纳米光子学研究中的热点。纳米膜层结构基于激光作用下的非线性局域光学效应实现超分辨。分析了超分辨近场薄膜结构突破衍射极限的光学原理,对超分辨纳米薄膜结构的表面等离子体激发特性、非线性光学特性、近场光学特性和超透镜效应等重要光学性质的最新研究进展做了系统介绍。

光学超分辨技术在高密度光存储中的应用

综述了超分辨技术的类别原理及光学超分辨的发展状况,并给出了超分辨光学头的结构和存储机理, 重点论述了光学超分辨技术在光学头中的应用。

氧化物记录介质在光存储中的应用及其研究进展

系统总结了用于光存储记录层的氧化物薄膜的存储机理、存储特性以及最新进展，讨论了氧化物掺杂对提高存储性能的影响，指出了氧化物薄膜存在的不足，并探讨了可能的改善途径。在此基础上对存储材料的发展趋势及氧化物材料的研究前景进行了展望。

超分辨近场结构中二元共晶合金掩膜的工作机制

超分辨近场结构(super-RENS)技术通过在传统光盘结构中插入掩膜结构而实现近场超分辨,是目前最具实用化前景的超高密度光存储技术之一,其中掩膜层的近场光学特性是决定其光存储性能的关键。利用三维时域有限差分法(3D-FDTD)对合金掩膜的近场光强分布进行了数值仿真和分析,提出二元共晶合金薄膜在激光作用下形成的规则微结构可能是以其作为掩膜层的超分辨近场结构光盘产生较高信噪比(SNR)的原因。

Host dependent frequency upconversion of Yb3+/Tm3+-codoped oxyfluoride tellurite glasses

The upconversion luminescence properties of Yb3+/Tm3+-codoped oxyfluoride tellurite glasses under 980 nm excitation are investigated experimentally. The intense blue and relatively weak red emissions centered at 475 and 649 nm corresponding to the transitions (1)G(4) -> H-3(6) and (1)G(4) -> H-3(4) of Tm3+, respectively, are simultaneously observed at room temperature. The effect of PbF2 on upconversion intensity is observed and discussed, and possible upconversion mechanisms are evaluated. The intense blue upconversion luminescence of Yb3+/Tm3+-codoped oxyfluoride tellurite glasses may be a potentially useful material for developing blue upconversion optical devices. (c) 2005 Elsevier B.V. All rights reserved.

Gamma-irradiation effects on Ce-doped YAG crystals grown by Cz and TGT method

Gamma-rays radiation effects on Ce:YAG crystals grown by Czochralski (Cz) and temperature gradient techniques (TGT) have been studied by means of optical absorption and luminescence spectra. Valence of Ce3+ ion changes during the gamma-ray irradiation process and this result indicates Ce4+ ion may exist in both Cz-Ce:YAG and TGT-Ce:YAG crystals. Thermally stimulated luminescence measurements reveal intense thermoluminescence peaks in gamma-irradiated Ce:YAG crystals and trap parameters were calculated by general-order kinetics expression. (C) 2006 Elsevier B.V. All rights reserved.

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

The vertical-cavity surface-emitting laser(VCSEL) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. Many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. Many of these applications require stable and single-mode high output power. Several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. In this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. Theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard VCSELs.

Photochromic fulgide for holographic recording

(N-4'-methoxy-2-methyl-5-phenyl)-3-pyrryl-ethylidene (isopropylidene) succinic anhydride fulgide, doped in PMMA matrix, exhibits photochromic behavior. The fatigue resistance experiment shows no photodegradation is detected after more than 450 writing-erasing cycles. Study of fulgide material for holographic recording media shows the optimal exposure and the diffraction efficiency is 1047 mJ/cm(2) and 2.26%, respectively, with 10 mum thickness polymer film. Holographic grating with 1680 lines/mm at writing angle theta = 30degrees is also obtained. (C) 2004 Elsevier B.V. All rights reserved.

Gaussian diffraction model for Sb thin films in super-resolution near-field structure

SPIE

Real-time non-destructive testing of dynamic holograms in doubly-doped LiNbO3 crystals using phase-conjugate technique

Nankai University