Oxide Semiconductors For Organic Opto-electronic Devices

Development of transparent oxide semiconductors (TOS) from Earth-abundant materials is of great interest for cost-effective thin film device applications, such as solar cells, light emitting diodes (LEDs), touch-sensitive displays, electronic paper, and transparent thin film transistors. The need of inexpensive or high performance electrode might be even greater for organic photovoltaic (OPV), with the goal to harvest renewable energy with inexpensive, lightweight, and cost competitive materials. The natural abundance of zinc and the wide bandgap ($sim$3.3 eV) of its oxide make it an ideal candidate. In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the microstructure during the thin films growth, resulting in GZO electrode with conductivity greater than 4000 S/cm and transparency greater than 90 %. Similarly, various studies on research and development of Indium Zinc Tin Oxide and Indium Zinc Oxide thin films which can be applied to flexible substrates for next generation solar cells application is presented. In these new TCO systems, understanding the role of crystallographic structure ranging from poly-crystalline to amorphous phase and the influence on the charge transport and optical transparency as well as important surface passivation and surface charge transport properties. Implementation of these electrode based on ZnO on opto-electronics devices such as OLED and OPV is complicated due to chemical interaction over time with the organic layer or with ambient. The problem of inefficient charge collection/injection due to poor understanding of interface and/or bulk property of oxide electrode exists at several oxide-organic interfaces. The surface conductivity, the work function, the formation of dipoles and the band-bending at the interfacial sites can positively or negatively impact the device performance. Detailed characterization of the surface composition both before and after various chemicals treatment of various oxide electrode can therefore provide insight into optimization of device performance. Some of the work related to controlling the interfacial chemistry associated with charge transport of transparent electrodes are discussed. Thus, the role of various pre-treatment on poly-crystalline GZO electrode and amorphous indium zinc oxide (IZO) electrode is compared and contrasted. From the study, we have found that removal of defects and self passivating defects caused by accumulation of hydroxides in the surface of both poly-crystalline GZO and amorphous IZO, are critical for improving the surface conductivity and charge transport. Further insight on how these insulating and self-passivating defects cause charge accumulation and recombination in an device is discussed. With recent rapid development of bulk-heterojunction organic photovoltaics active materials, devices employing ZnO and ZnO based electrode provide air stable and cost-competitive alternatives to traditional inorganic photovoltaics. The organic light emitting diodes (OLEDs) have already been commercialized, thus to follow in the footsteps of this technology, OPV devices need further improvement in power conversion efficiency and stable materials resulting in long device lifetimes. Use of low work function metals such as Ca/Al in standard geometry do provide good electrode for electron collection, but serious problems using low work-function metal electrodes originates from the formation of non-conductive metal oxide due to oxidation resulting in rapid device failure. Hence, using low work-function, air stable, conductive metal oxides such as ZnO as electrons collecting electrode and high work-function, air stable metals such as silver for harvesting holes, has been on the rise. Devices with degenerately doped ZnO functioning as transparent conductive electrode, or as charge selective layer in a polymer/fullerene based heterojunction, present useful device structures for investigating the functional mechanisms within OPV devices and a possible pathway towards improved air-stable high efficiency devices. Furthermore, analysis of the physical properties of the ZnO layers with varying thickness, crystallographic structure, surface chemistry and grain size deposited via various techniques such as atomic layer deposition, sputtering and solution-processed ZnO with their respective OPV device performance is discussed. We find similarity and differences in electrode property for good charge injection in OLEDs and good charge collection in OPV devices very insightful in understanding physics behind device failures and successes. In general, self-passivating surface of amorphous TCOs IZO, ZTO and IZTO forms insulating layer that hinders the charge collection. Similarly, we find modulation of the carrier concentration and the mobility in electron transport layer, namely zinc oxide thin films, very important for optimizing device performance.

Cluster scheduling and load balancing via TCP options

This paper describes an experiment in designing, implementing and testing a Transport layer cluster scheduling and dispatching architecture. The motivation for the experiment was the hypothesis that a Transport layer clustering solution may offer advantantages over the existing industry-standard Network layer and Data Link Layer approaches. The critical success factors initially established to guide and evaluate the experiment were reduced dispatcher work load, reduced dispatcher internal state memory requirements, distributed denial of service resilience, and cluster software design simplicity. The functional design stage of the experiment produced a Transport layer strategy for scheduling and load balancing based on the specification of two new TCP options. Implementation required the introduction of the newly specified TCP options into the Linux (2.4) kernel. The implementation produced an extended Linux Socket API to facilitate user-process access to the additional TCP capability. The testing stage of the experiment confirmed the operational efficiency of the solution.

Optimization of microcavity OLED by varying the thickness of multi-layered mirror

We optimized the emission efficiency from a microcavity OLEDs consisting of widely used organic materials, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) (Alq(3)) as emitting and electron transporting layer. LiF/Al was considered as a cathode, while metallic Ag anode was used. TiO2 and Al2O3 layers were stacked on top of the cathode to alter the properties of the top mirror. The electroluminescence emission spectra, electric field distribution inside the device, carrier density, recombination rate and exciton density were calculated as a function of the position of the emission layer. The results show that for certain TiO2 and Al2O3 layer thicknesses, light output is enhanced as a result of the increase in both the reflectance and transmittance of the top mirror. Once the optimum structure has been determined, the microcavity OLED devices can be fabricated and characterized, and comparisons between experiments and theory can be made.

Effect of anode material and cavity design on the performance of microcavity OLEDs

We report on the effect of the replacement of the conventional ITO anode with the semitransparent metallic material on the performance of microcavity OLEDs. We performed comprehensive simulations of the emission from microcavity OLEDs consisting of widely used organic materials, N,N′-di(naphthalene-1- yl)-N,N′-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) (Alq3) as emitting and electron transporting layer. Silver and LiF/Al were considered as a cathode, while metallic (Au and Ag) anode was used and simulations were performed on devices with both the metallic and conventional ITO anode. The electroluminescence emission spectra, electric field distribution inside the device, carrier density, recombination rate and exciton density were calculated as a function of the position of the emission layer. The results show that the metallic anode enhances light output and that optimum emission from a microcavity OLED is achieved when the position of the recombination region is aligned with the antinode of the standing wave inside the cavity. The microcavity OLED devices with Ag/Ag and Ag/Au mirrors were fabricated and characterized. The experimental results have been compared to the simulations and the influence of the different anode, emission region width and position on the performance of microcavity OLEDs was discussed.

O MERCADO DE TRABALHO PARA O PROFISSIONAL DA HOTELARIA NAS CIDADES DE GUARULHOS E SÃO BERNARDO DO CAMPO

O objetivo desse estudo é descobrir se as cidades de Guarulhos e São Bernardo do Campo têm chances de, ao explorar sua vocação turística para os negócios, obter reais possibilidades de ampliar seu mercado de trabalho na área de hotelaria. Para realizar o que se propôs, utilizou-se dos dados primários advindos das entrevistas pessoais com alguns profissionais ligados ao setor; além dos dados secundários e informações coletadas nos próprios sites das prefeituras, sindicatos, meios de hospedagem e outras associações que integrados à pesquisa bibliográfica verificou-se que as duas cidades possuem potencial turístico para os negócios porque contam com parques industriais que possibilitam a entrada e permanência de pessoas que vem às cidades para realizar diversos tipos de negócios. Para tanto, precisam hospedar-se, geralmente, por um espaço de tempo em que pretendem descansar, alimentar-se, banhar-se como se estivessem em suas casas. Além desse potencial, as cidades apresentam mais algumas características em comum como a localização de aeroportos, Cumbica e Congonhas, bem próximos de seus centros e, ainda, servem de passagem para outras cidades consideradas mais acolhedoras como Santos, Guarujá entre outras localizadas no litoral e São Paulo, na região conhecida como a grande São Paulo. Por isso Guarulhos e São Bernardo acabam sendo pouco aproveitadas no que se refere aos seus potenciais turísticos. A pesquisa aponta que se houver investimentos nesse setor, o turismo poderá crescer tornando-as cidades receptivas àqueles que as visitam por motivo de trabalho e que precisam de uma boa hospedagem e, muitas vezes, de um lugar para utilizar como seu próprio escritório. Com isso, aumenta-se a necessidade de profissionais qualificados para atender às expectativas desses turistas. Conseqüentemente amplia-se o mercado de trabalho nas áreas voltadas ao turismo e hotelaria das cidades. Entre elas, destacam-se Transportes, Comércio, Segurança, Gastronomia, Cultura, Esportes e Lazer, Redes Hoteleiras e até mesmo Escolas Técnicas e Faculdades. Identificou-se que as duas cidades estudadas possuem potencial turístico para os negócios e podem ampliar o mercado de trabalho hoteleiro a partir da conscientização das partes interessadas em investirem na infra-estrutura, na capacitação dos Recursos Humanos, na estrutura dos empreendimentos hoteleiros e na divulgação do local, dos produtos e dos serviços oferecidos.(AU)

An objective approach to measuring video playback quality in lossy networks using TCP

In this work, we investigate a new objective measurement for assessing the video playback quality for services delivered in networks that use TCP as a transport layer protocol. We define the new metric as pause intensity to characterize the quality of playback in terms of its continuity since, in the case of TCP, data packets are protected from losses but not from delays. Using packet traces generated from real TCP connections in a lossy environment, we are able to simulate the playback of a video and monitor buffer behaviors in order to calculate pause intensity values. We also run subjective tests to verify the effectiveness of the metric introduced and show that the results of pause intensity and the subjective scores made over the same real video clips are closely correlated.

Secure Wireless Key Establishment Using Retrodirective Array

In this paper a new method of establishing secret keys for wireless communications is proposed. A retrodirective array (RDA) that is configured to receive and re-transmit at different frequencies is utilized as a relay node. Specifically the analogue RDA is able to respond in ‘real-time’, reducing the required number of time slots for key establishment to two, compared with at least three in previous relay key generation schemes. More importantly, in the proposed architecture equivalent reciprocal wireless channels between legitimate keying nodes can be randomly updated within one channel coherence time period, leading to greatly increased key generation rates (KGRs) in slow fading environment. The secrecy performance of this RDA assisted key generation system is evaluated and it is shown that it outperforms previous relay key generation systems.

Vaness: DNS for nomadic users in vehicular networks

Vehicular networks, also known as VANETs, are an ad-hoc network formed by vehicles and road-side units. Nowadays they have been attracting big interest both from researchers as from the automotive industry. With the upcoming of automotive specific operating systems and self-driving cars, the use of applications on vehicles and the integration with common mobile devices is becoming a big part of VANETs. Although many advances have been made on this field, there is still a big discrepancy between the communication layer services provided by VANETs and the user level services, namely those accessible through mobile applications on other networks and technologies. Users and developers are accustomed to user-to-user or user-tobusiness communication without explicit concerns related with the available communication transport layer. Such is not possible in VANETs since people may use more than one vehicle. However, to send a message to a specific user in these networks, there is a need to know the ID of the vehicle where the user is, meaning that there is a lack of services that map each individual user to VANETs endpoint (vehicle identification). This dissertation work proposes VANESS, a naming service as a resource to support user-to-user communication within a heterogeneous scenario comprising typical ISP scenario and VANETs focused on mobile devices. The proposed system is able to map the user to an end point either locally (i.e. there is not internet connection at all), online (i.e. system is not in a vehicular network but has direct internet connection) and using a gateway (i.e. the system is in a vehicular network where some of the nodes have internet access and will act as a gateway). VANESS was fully implemented on android OS with results proving his viability, and partially on iOS showing its multiplatform capabilities.

Reduced graphene oxide wrapped Cu2O supported on C3N4: An efficient visible light responsive semiconductor photocatalyst

Herein, Cu 2O spheres were prepared and encapsulated with reduced graphene oxide (rGO). The Cu 2O–rGO–C3N4 composite covered the whole solar spectrum with significant absorption intensity. rGO wrapped Cu 2O loading caused a red shift in the absorption with respect to considering the absorption of bare C3N4. The photoluminescence study confirms that rGO exploited as an electron transport layer at the interface of Cu 2O and C3N4 heterojunction. Utmost, ∼2 fold synergistic effect was achieved with Cu 2O–rGO–C3N4 for the photocatalytic reduction of 4-nitrophenol to 4-aminophenol in comparison with Cu 2O–rGO and C3N4. The Cu 2O–rGO–C3N4 photocatalyst was reused for four times without loss in its activity.

Security issues for future intelligent transport systems

Cooperative Intelligent Transportation Systems (C-ITS) allow in-vehicle systems, and ultimately the driver, to enhance their awareness of their surroundings by enabling communication between vehicles and road infrastructure. C-ITS are widely considered as the next major step in driving assistance systems, aiming at increasing safety, comfort and mobility for drivers. However, any communicating systems are subjected to security threats. A key component for providing secure communications at a large scale is a Public Key Infrastructure (PKI). Due to the safety-critical nature of Vehicle-to-Vehicle (V2V) communications, a C-ITS PKI has functional, performance and scalability requirements that differ from traditional non-automotive environments. This paper identifies and defines the key functional and security requirements for C-ITS PKI systems and analyses proposed C-ITS PKI standards against these requirements. In particular, the proposed US and European C-ITS PKI systems are identified as being too complex and not scalable. The paper also highlights various privacy, security and scalability concerns that should be considered for a secure C-ITS PKI solution in the Australian transport landscape.

Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C₆₀/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C₆₀ (C₆₀/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.

Effect of soil tillage on erosion and nutrient transport in plough layer runoff

Yhteenveto: Viljelymenetelmien vaikutus eroosioon ja ravinteiden huuhtoutumiseen

Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer

By replacing the flat (Ga1-xAlx)As barrier layer with a trapezoidal AlxGa1-xAs barrier layer, a conventional heterostructure can be operated in enhancement mode. The sheet density of two-dimensional electron gas (2DEG) in the structure can be tuned linearly from N-2D = 0.3 x 10(11) cm(-2) to N-2D = 4.3 x 10(11) cm(-2) by changing the bias on the top gate. The present scheme for gated heterostructures is easy to fabricate and does not require the use of self-alignment photolithography or the deposition of insulating layers. In addition, this scheme facilitates the initial electrical contact to 2DEG. Although, the highest electron mobility obtained for the moment is limited by the background doping level of heterostructures, the mobility should be improved substantially in the future. (C) 2009 Elsevier B.V. All rights reserved.