Picosecond laser patterning of PEDOT:PSS thin films

Picosecond pulsed laser (10.4 ps, 1064 nm, 5 and 50 kHz) patterning studies were performed, of PEDOT:PSS thin films of varying thickness deposited by spin coating on glass substrates, by ablating the films or by changing locally by laser irradiation the optical and electrical properties of the polymer. From a detailed observation of the morphology of single pulse ablated holes on the surfaces of the films, in combination with simple calculations, it is concluded that photomechanical ablation is the likely ablation mechanism of the films. The single pulse ablation thresholds were measured equal to 0.13-0.18 J/cm 2 for films with thicknesses in the region of ∼100-600 nm. The implications on ablation line patterning of the films using different fluences, scanning speeds and pulse repetition rates, were investigated systematically. Laser irradiation of the films before ablation induces a metal-insulator transition of the polymer because of the formation of charge localization due to a possible creation of molecular disorder in the polymer and shortening of its conjugation length. © 2010 Elsevier B.V. All rights reserved.

Performance of hybrid buffer Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) layers doped with plasmonic silver nanoparticles

We compare the performance of a typical hole transport layer for organic photovoltaics (OPVs), Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) thin film with a series of PEDOT:PSS layers doped with silver (Ag) nanoparticles (NPs) of various size distributions. These hybrid layers have attracted great attention as buffer layers in plasmonic OPVs, although there is no report up to date on their isolated performance. In the present study we prepared a series of PEDOT:PSS layers sandwiched between indium tin oxide (ITO) and gold (Au) electrodes. Ag NPs were deposited on top of the ITO by electron beam evaporation followed by spin coating of PEDOT:PSS. Electrical characterization performed in the dark showed linear resistive behavior for all the samples; lower resistance was observed for the hybrid ones. It was found that the resistivity of the samples decreases with increasing the particle's size. A substantial increase of the electric field between the ITO and the Au electrodes was seen through the formation of current paths through the Ag NPs. A striking observation is the slight increase in the slope of the current density versus voltage curves when measured under illumination for the case of the plasmonic layers, indicating that changes in the electric field in the vicinity of the NP due to plasmonic excitation is a non-vanishing factor. © 2014 Published by Elsevier B.V. All rights reserved.

Determination of the absorption for incident light propagating parallel through the guest-host polymer film waveguide

Guest host polymer thin films of polymethyl methacrylate (PMMA) incorporated with (4'-nitrobenzene)-3-azo-9-ethylcarbazole (NAEC) were fabricated by spin coating and then poled by the method of corona-onset poling at elevated temperature. The absorption mechanism of the polymeric film, which is very important for the optical transmission losses and directly relates to the orientation of chromophore NAEC in polymer PMMA, was investigated in detail. From the UV-visible absorption spectra for NAEC/PMMA film before and after being poled, we determined the change of absorption coefficient kappa with the wavelength and approximately calculated the maximum absorption A(parallel tomax) as 3.46 for incident light propagating parallel through the film, i.e. the ordinary polarized light, which cannot be directly measured in the spectro photometer. (C) 2002 Elsevier Science Ltd. All rights reserved.

Side radical influence on the nonlinear optical properties and thermal stability of poled polymer films

Films of polyetherketone doped with the chromophores Disperse Red 1 (DR1) and Disperse Red 13 (DR13) were prepared by spin-coating method. By the in situ Second-harmonic Generation (SHG) signal intensity measurement, the optimal poling temperatures were obtained. For the investigated polyetherketone polymer doped with DR1 (DR1/PEK-c) and polyetherketone polymer doped with DR13 (DR13/PEK-c) films, the optimal poling temperatures were 150degreesC and 140degreesC, respectively. Under the optimal poling conditions, the high second-order nonlinear optical coefficient chi(33)((2)) = 11.02 pm/V has been obtained for the DR1/PEK-c; and for DR13/PEK-c at the same conditions the coefficient is 17.9 pm/V. The SHG signal intensity DR1/PEK-c could maintain more than 80% of its initial value when the temperature was under 100degreesC, and the SHG signal intensity of the DR13/PEK-c could maintain more than 80% of its initial value when the temperature was under 135degreesC. (C) 2002 Kluwer Academic Publishers.

Dielectric relaxation of poled polymer DCNP/PMMA

We have prepared the polymer thin films of a 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pyrazole (DChTP)/poly (methyl methacrylate) (PMMA) guest-host system by spin coating. In order to investigate their temporal and temperature stability, we have measured their dielectric relaxation spectra including the frequency dependence of the real and imaginary parts of dielectric constants. The investigated frequency ranged from 50 Hz to 10 MHz. The measured temperature range above the glass transition temperature T-g (95 degrees C) of the DCNP/PMMA system was from 95 degrees C to 1250C. By using the Adam-Gibbs model, the temperature dependence of the characteristic time tau above T-g was fitted, and the values of the characteristic times tau below T-g were estimated. The lifetimes of the polymer were evaluated by the Kohlrausch-Williams Watts (KWW) empirical decay model. (C) 2000 Elsevier Science B.V. All rights reserved.

Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device

Poly(3,4-ethylenedioxythiopliene):poly(styrene sulfonate) (PEDOT:PSS) films have been electrochemically polymerized in situ on ITO glass substrate in boron trifluoride diethyl etherate electrolyte (BFEE). Cyclic voltammograms show good redox activity and stability of the PEDOT films. These films had been directly used to fabricate organic-inorganic hybrid solar cells with the structure of ITO/PEDOT/ZnO:MDMC-PPV/Al. The solar cells made of electrochemically polymerized films exhibit higher energy conversion efficiencies compared with that prepared by the spin-coating method, and the highest value is 0.33%. This in-situ electropolymerized method effectively simplifies fabricating procedures and may blaze a facile and economical route for producing high-efficiency solar cells.

稀土透明发光薄膜的合成及其应用

利用溶胶-凝胶法制备了SiO_2、TiO_2等单组份凝胶玻璃及二者混合的双组份二元凝胶玻璃。对其中溶胶的形成、溶胶向凝胶的转化过程及最终凝胶玻璃的形成进行了大量系统的研究。稀土(Tb~(3+)、Eu~(3+))配合物分别以预掺杂法、原位(in-situ)掺杂法及原位两步水解法等方法掺入溶胶中，用旋转涂覆法(spin-coating method)制成发光薄膜。利用荧光光谱、红外光谱、X射线衍射分析等现代谱学方法对薄膜的性能进行了分析。由于稀土Eu~(3+)离子的~5D_0→~7F_2跃迁是对环境变化比较敏感的跃迁超灵敏跃迁，相应于这些跃迁的谱线强度随着环境的不同可改变2-4倍，故将Eu~(3+)离子作为荧光探针引入TiO_2凝胶玻璃中来研究TiO_2凝胶形成中的水解、缩聚过程。差热一热重分析表明在400 ℃左右TiO_2凝胶发生了由无定型向锐钛矿型的晶型的转变，在不同温度下处理的TiO_2凝胶的XRD曲线也可得到同样的结论。当温度达到800 ℃时观察到了金红石相的微小的衍射峰。从Eu~(3+)离子的荧光光谱可以看出对应于610 nm的~5D_0→~7F_2的跃迁强度(I_2)和590 nm的~5D_0→~7F_1的跃迁强度(I_1)随着热处理温度的升高而逐渐增强，说明随着处理温度升高，凝胶中水分子不断挥发，热处理过程中的羟基含量由于缩聚反应的不断进行而逐渐减少。~5D_0→~7F_1的跃迁属于磁偶极跃迁，发射强度I_1变化与环境变化无关。定义两个发射强度的比值R(R=I_2/I_1)，由R值的变化可以看出，TiO_2湿凝胶时Eu~(3+)离子与水成水合离子，干凝胶中水合离子逐渐被(Ti-O)_nEu键所取代，Eu~(3+)离子逐渐进入凝胶网状结构中。同时掺入Al~(3+)离子的凝胶中Eu~(3+)的发光强度要大于不含Al~(3+)离子的凝胶中Eu~(3+)的发光强 度，因为Eu~(3+)离子的聚集对荧光有猝灭作用，掺入Al~(3+)离子之后由于其对Eu~(3+)离子的分散作用使得跃迁强度大大增强。采用预掺杂法；原位掺杂法；原位两步水解法制备了稀土Eu~(3+)、Tb~(3+)的羧酸类配合物，2-2‘联吡啶，1，10-邻菲咯啉，β-二酮类等有机配合物掺杂的溶胶-凝胶发光薄膜。双掺Tb~(3+)和苯甲酸的凝胶荧光薄膜的红外分析结果可以看出，制得的凝胶薄膜的红外光谱图与SiO_2凝胶粉末的红外光谱图几乎一致，Tb~(3+)及有机配体掺入凝胶后配合物没有明显的特征振动吸收峰。说明配合物进入凝胶网状结构中，其振动被缩聚反应形成的微小孔隙结构所限制，没能观察到明显的吸收峰。由几种双掺稀土羧酸配合物的SiO_2凝胶薄膜的激发光谱可以看出，当以稀土Eu~(3+)离子或Tb~(3+)离子的特征发射波长监控时，得到的激发谱均为260 nm-350 nm范围内的宽带代替了稀土离子的特征窄带激发光谱，可以判断在凝胶薄膜中已经形成了配合物。而且双掺凝胶薄膜发射峰值比单掺稀土离子的凝胶薄膜发光强度高几个数量级。同时将薄膜在一定温度下进行热处理发现，对于双掺稀土和羧酸配体的凝胶薄膜，50 ℃时发射光谱无明显的发射峰，而随着热处理温度的逐渐升高出现发射峰并且强度逐渐增强，热处理超过100 ℃时发射峰的强度又有所降低。说明温度的升高使凝胶环境向着有利于稀土配合物形成的方向转变，因为两步水解过程中加入的六次甲基四胺会随着温度升高而逐渐分解出OH~-而仗凝胶环境pH值升高；另一方面，由于分子水和HCl的不断挥发也能提高凝胶环境的pH值，从而使配合物的形成反应更加完全。超过120 ℃后，接近配体的熔点(苯甲酸熔点129 ℃)，由于薄膜相当薄使配体的逐渐分解，荧光逐渐减弱；经175 ℃处理后，荧光几乎消失。除了羧酸配合物外还制备了稀土Tb~(3+) (Eu~(3+))与2-2‘联吡啶(邻菲咯啉)、TTA等二元配合物掺杂的溶胶-凝胶发光薄膜。凝胶薄膜的发光强度与相应的纯配合物薄膜相比由于凝胶的独特网状结构而有了较大的提高，通过荧光光谱和荧光寿命的比较均可以得出这样的结论。对凝胶薄膜和纯配合物/PVB薄膜的热稳定性比较可以看出，溶胶-凝胶发光薄膜的荧光强度随温度升高而降低，但与配合物的PVB薄膜的相比，仍显示了一定的热稳定性，在温度超过配合物的分解温度后仍显示出一定的发光强度，而纯配合物/PVB薄膜中配合物的荧光此时几乎完全消失。除了SiO_2凝胶之外，还制备和研究了TiO_2凝胶以及TiO_2-SiO_2复合凝胶作为基质的发光薄膜，发现在TiO_2凝胶中配合物未能象在SiO_2中那样显示出良好的发光性能，可能是因为作为过渡金属钛由于有d轨道与掺入其中的配体作用参与成键，影响了配体与稀土离子之间的能量转移。本论文中还将在光学领域中有重要作用的染料，例如荧光素(FL)引人TiO_2凝胶中，研究了FL在凝胶中的发光性质，对比了FL掺入TiO_2、TiO_2-SiO_2凝胶前后的吸收光谱、荧光光谱的变化。结果表明吸收峰有了较为明显的位移；荧光发射光谱吸收峰位置也有了较大的红移，这可能是由于凝胶的网状结构及孔道内的Ti-OH键等对染料影响的结果。

稀土有机－无机杂化材料的制备及发光性能

本论文旨在开发能使无机材料和有机材料的功能互补、协同优化的无机/有机复合发光材料的制备方法，并研究其发光性质，以发展一类新型的高性能发光材料。基于无机组份与有机组份的物理和化学性质的差异，采用能保持其性质均不改变的低温软化学合成法-溶胶-凝胶技术。无机组份选择具有优良光、热稳定性的SiO_2，有机组份选择具有和无机SiO_2相似折射率和优良力学性能的有机硅烷TMSPM和甲基丙烯酸羟乙酯(HEMA)。采用溶胶-凝胶法制备了两种杂化基质材料SiO_2/P (TMSPM)和SiO_2/P(HEMA)，所得的杂化材料具有良好的光学透明性。由于原位聚合物与无机SiO_2基质同时形成，不仅使杂化基质具有一定的韧性，而且可有效降低无机SiO_2凝胶基质的热聚集和光损耗，是制备复合发光材料的优良基质材料。稀土 (Tb~(3+), Eu~(3+))配合物分别以预掺杂法，原位(in-situ)掺杂法掺入溶胶中，制备了块状杂化材料和用旋转涂覆法(spin-coating method)制成了杂化发光薄膜。利用荧光光谱、红外光谱等现代谱学方法对材料的性能进行了分析。采用预掺杂法制备了稀土Eu~(3+)的1，10-菲罗啉、β-二酮类有机配合物掺杂的杂化发光薄膜。当以稀土Eu~(3+)离子的特征发射波长监控时，得到的激发谱均匀260-450 cm范围内的宽带代替了稀土离子的特征窄带激发光谱，可以判断在凝胶薄膜中已经形成了配合物，而且杂化凝胶薄膜的发射峰值比纯硅胶薄膜的发光强度高数倍，杂化薄膜的荧光寿命大于纯硅胶薄膜，表明与纯硅胶相比，杂化基质更能使稀土配合物分子与外界隔绝，避免了稀土配合物分子与周围环境的相互作用，从而降低了非辐射去活化过程，是一种更好的保护性基质。采用原位掺杂法制备了掺杂稀土Tb~(3+)的羧酸类配合物的杂化块状发光材料。除部分羧酸自由基外，羧酸配体已经通过原位合成法成功地掺入到了杂化基质中。羧酸配体与稀土离子所形成的结构、给电子效应、共轭效应及空间位阻效应特性对于其杂化材料的发光强度、荧光寿命等均会产生影响。

Thermally Stable Guest-Host Polyetherketone Poled Polymer for Electro-Optical Applications

The high glass transition temperature polymer polyetherketone doped with disperse red 13 (DR13/PEK-c) has been prepared by the spin-coating method. Through in situ second-harmonic generation, the corona poling temperature was optimized by measuring the temperature dependence of the in situ second-harmonic generation signal intensity under the poling electric field. The linear electro-optic coefficients of the poled polymer films have been determined at 632.8 nm by using a simple interferometric technique. The polymer system was measured after 13 000 h, and found that it remained at 80% of its initial value.

Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites

An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

透明材料表面纳米结构加工方法的探讨

<正>在材料表面加工微/纳米结构将会显著改善材料亲疏水性质,制作超疏水的透明材料对于防水、防雾具有重要意义。本报告针对两种透明材料PMMA和PDMS,讨论了利用mold-wetting法和spin-coating的方法分别在其表面加工纳米结构的工艺过程,并进行了接触角测量。报告将讨论表面稳定性和疏水等特性。

Solution-Processible Red Iridium Dendrimers based on Oligocarbazole Host Dendrons: Synthesis, Properties, and their Applications in Organic Light-Emitting Diodes

A series of novel red-emitting iridium dendrimers functionalized with oligocarbazole host dendrons up to the third generation (red-G3) have been synthesized by a convergent method, and their photophysical, electrochemical, and electroluminescent properties have been investigated. In addition to controlling the intermolecular interactions, oligocarbazole-based dendrons could also participate in the electrochemical and charge-transporting process. As a result, highly efficient electrophosphorescent devices can be fabricated by spin-coating from chlorobenzene solution in different device configurations.

Square lamellar structure having phase-separated microdomain in H-shaped block copolymer thin film

The morphology of a H-shaped block copolymer (poly(ethylene glycol) backbone and polystyrene branches (PS)(2)PEG(PS)(2)) in a thin film has been investigated. A peculiar square lamella that has a phase-separated microdomain at its surface is obtained after spin coating. The experimental temperature plays a critical role in the lamellar formation. The copolymer first self-assembles into square lamellar micelles with an incomplete crystalline core due to the crystallizability of PEG.

A soluble nonionic surfactant as electron injection material for high-efficiency inverted bottom-emission organic light emitting diodes

A soluble nonionic surfactant, polyethylenimine 80% ethoxylated (PEIE) solution, was used as the electron injection material in inverted bottom-emission organic light emitting diodes (OLEDs). The transparent PEIE film was formed on indium-tin-oxide cathode by simple spin-coating method and it was found that the electron injection was greatly enhanced. The devices with PEIE electron injection layer had achieved significant enhancement in luminance and efficiency. The maximum luminance reached 47 000 cd/m(2), and the maximum luminance efficiency and power efficiency arrived at 19.7 cd/A and 10.6 lm/W, respectively.

Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)

Herein, an insulating fluorinated polyimide (F-PI) is utilized as an ultrathin buffer layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in polymer light-emitting diodes to enhance the device performance. The selective solubility of F-PI in common solvents avoids typical intermixing interfacial problems during the sequential multilayer spin-coating process. Compared to the control device, the F-PI modification causes the luminous and power efficiencies of the devices to be increased by a factor of 1.1 and 4.7, respectively, along with almost 3-fold device lifetime enhancement. Photovoltaic measurement, single-hole devices, and X-ray photoelectron spectroscopy, are utilized to investigate the underlying, mechanisms, and it is found that the hole injection barrier is lowered owing to the interactions between the PEDOT:PSS and F-PI. The F-PI modified PEDOT:PSS layer demonstrates step-up ionization potential profiles from the intrinsic bulk PEDOT:PSS side toward the F-PI-modified PEDOT:PSS surface, which facilitate the hole injection.