Pulsed-field studies of the magnetization reversal in molecular nanomagnets

We report experimental studies of crystals of Mn12 molecular magnetic clusters in pulsed magnetic fields with sweep rates up to 410^3 T/s . The steps in the magnetization curve are observed at fields that are shifted with respect to the resonant field values. The shift systematically increases as the rate of the field sweep goes up. These data are consistent with the theory of the collective dipolar relaxation in molecular magnets.

Ni-Mn-Ga thin films produced by pulsed laser deposition

Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films

Networks of people in specialty production: family firms in the iron and steel Wire industries in Spain (1870-2000)

Capital intensive industries in specialized niches of production have constituted solid ground for family firms in Spain , as evidenced by the experience of the iron and steel wire industries between 1870 and 2000. The embeddedness of these firms in their local and regional environments have allowed the creation of networks that, together with favourable institutional conditions, significantly explain the dominance of family entrepreneurship in iron and steel wire manufacturing in Spain, until the end of the 20 th century. Dominance of family firms at the regional level has not been not an obstacle for innovation in wire manufacturing in Spain, which has taken place even when institutional conditions blocked innovation and traditional networking. Therefore, economic theories about the difficulties dynastic family firms may have to perform appropriately in science-based industries must be questioned

Consumer Advisory: Don’t Touch That Wire! Money Transfer Scams, August 2013

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Volcanic arcs fed by rapid pulsed fluid flow through subducting slabs

At subduction zones, oceanic lithosphere that has interacted with sea water is returned to the mantle, heats up during descent and releases fluids by devolatilization of hydrous minerals. Models for the formation of magmas feeding volcanoes above subduction zones require largescale transport of these fluids into overlying mantle wedges(1-3). Fluid flow also seems to be linked to seismicity in subducting slabs. However, the spatial and temporal scales of this fluid flow remain largely unknown, with suggested timescales ranging from tens to tens of thousands of years(3-5). Here we use the Li-Ca-Sr isotope systems to consider fluid sources and quantitatively constrain the duration of subduction-zone fluid release at similar to 70 km depth within subducting oceanic lithosphere, now exhumed in the Chinese Tianshan Mountains. Using lithium-diffusion modelling, we find that the wall-rock porosity adjacent to the flowpath of the fluids increased ten times above the background level. We show that fluids released by devolatilization travelled through the slab along major conduits in pulses with durations of about similar to 200 years. Thus, although the overall slab dehydration process is continuous over millions of years and over a wide range of pressures and temperatures, we conclude that the fluids produced by dehydration in subducting slabs are mobilized in short-lived, channelized fluid-flow events.

Avalanche-like vortex penetration driven by pulsed microwave fields in an epitaxial LaSrCuO thin film

Different vortex penetration regimes have been registered in the output voltage signal of a magnetometer when single microwave pulses are applied to an epitaxial overdoped La2− x Sr x CuO4 thin film in a perpendicular dc magnetic field. The onset of a significant variation in the sample magnetization which exists below threshold values of temperature, dc magnetic field, and pulse duration is interpreted as an avalanche-type flux penetration. The microwave contribution to the background electric field suggests that the nucleation of this fast vortex motion is of electric origin, which also guarantees the occurrence of vortex instabilities under adiabatic conditions via the enhancement of the flux flow resistivity. Flux creep phenomena and heat transfer effects act as stabilizing factors against the microwave-pulse-induced fast flux diffusion.

Nd:YAG Laser Welding of 5083 Aluminium Alloy using Filler Wire

High reflectivity and high thermal conductivity, high vapour pressure of alloyingelements as well as low liquid surface tension and low ionisation potential, make laser welding of aluminium and its alloys a demanding task.Problems that occur during welding are mainly process instabilities of the keyhole and the melt pool, increased plasma formation above the melt pool and loss of alloying elements. These problems lead to unwanted metallurgical defects like hot cracks and porosity in the weld bead andother problems concerning the shape and appearance of the weld bead. In order to minimise the defects and improve the weld quality, the process and beam parameters need to be carefully adjusted along with a consideration concerning the use of filler wire for the welding process. In this work the welding of 3,0 mm thick grade 5083 aluminium alloy plates using a 3,0 kW Nd:YAG laser with grade 5183 filler wire addition is investigated. The plates were welded as butt joints with air gap sizes 0,5 mm, 0,7mm and 1,0 mm. The analysis of the weld beads obtained from the weldedsamples showed that the least imperfections were produced with 0,7 mm air gaps at moderate welding speeds. The analysis also covered the calculation of the melting efficiency and the study of the shape of the weld bead. The melting efficiency was on average around 20 % for the melting process of the welded plates. The weld beads showed the characteristic V-shape of a laser weld and retained this shape during the whole series of experiments.

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.

Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

We have investigated doped and undoped layers of microcrystalline silicon prepared by hot-wire chemical vapour deposition optically, electrically and by means of transmission electron microscopy. Besides needle-like crystals grown perpendicular to the substrate's surface, all of the layers contained a noncrystalline phase with a volume fraction between 4% and 25%. A high oxygen content of several per cent in the porous phase was detected by electron energy loss spectrometry. Deep-level transient spectroscopy of the crystals suggests that the concentration of electrically active defects is less than 1% of the undoped background concentration of typically 10^17 cm -3. Frequency-dependent measurements of the conductance and capacitance perpendicular to the substrate surface showed that a hopping process takes place within the noncrystalline phase parallel to the conduction in the crystals. The parasitic contribution to the electrical circuit arising from the porous phase is believed to be an important loss mechanism in the output of a pin-structured photovoltaic solar cell deposited by hot-wire CVD.

Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD

The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 °C). A transition in the crystalline preferential orientation from (2 2 0) to (1 1 1) was observed around 1700 °C. Transmission electron microscopy (TEM) images, together with secondary ion mass spectrometry (SIMS) measurements, suggested that no oxidation occurred in materials obtained at low filament temperature due to the high density of the tissue surrounding grain boundaries. A greater concentration of SiH 3 radicals formed at these temperatures seemed to be responsible for the higher density.

Tandem-MAG-hitsauksen soveltuvuus isojen levylakanoiden valmistamiseen

Diplomityön tavoitteena oli selvittää tandem-MAG-hitsausmenetelmän soveltuvuus isojen levylakanoiden valmistamiseen. Päätavoitteena oli selvittää suurimmat saavutettavat hitsausnopeudet sekä railonvalmistukselle asetettavat vaatimukset kahdella laivanrakennusteräksellä. Tutkimuksessa käytettiin omia hitsauskokeita ja liitokset testattiin luokitusseurojen vaatimusten mukaisesti. Selvitettiin myös syntyvät hitsausmuodonmuutokset sekä edut ja rajoitukset verrattuna laserhitsaukseen. Lisäksi laadittiin ei-synergiselle pulssihitsauslaitteistolle suuntaa-antava synergiakäyrä tätä sovellusta varten hitsauskokeiden perusteella. Tandem-MAG-hitsaus osoittautui erittäin kilpailukykyiseksi hitsausmenetelmäksi sovelluksessa. Magneettisen puhalluksen havaittiin olevan merkittävä häiriötekijä tällä menetelmällä hitsattaessa.

Hot wire configuration for depositing device grade nano-crystalline silicon at high deposition rate

The University of Barcelona is developing a pilot-scale hot wire chemical vapor deposition (HW-CVD) set up for the deposition of nano-crystalline silicon (nc-Si:H) on 10 cm × 10 cm glass substrate at high deposition rate. The system manages 12 thin wires of 0.15-0.2 mm diameter in a very dense configuration. This permits depositing very uniform films, with inhomogeneities lower than 2.5%, at high deposition rate (1.5-3 nm/s), and maintaining the substrate temperature relatively low (250 °C). The wire configuration design, based on radicals' diffusion simulation, is exposed and the predicted homogeneity is validated with optical transmission scanning measurements of the deposited samples. Different deposition series were carried out by varying the substrate temperature, the silane to hydrogen dilution and the deposition pressure. By means of Fourier transform infrared spectroscopy (FTIR), the evolution in time of the nc-Si:H vibrational modes was monitored. Particular importance has been given to the study of the material stability against post-deposition oxidation.

Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.