Ni-Mn-Ga thin films produced by pulsed laser deposition
Contribuinte(s) |
Universitat de Barcelona |
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Data(s) |
02/03/2012
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Resumo |
Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films |
Identificador | |
Idioma(s) |
eng |
Publicador |
American Institute of Physics |
Direitos |
Thin films (c) American Institute of Physics, 2002 |
Palavras-Chave | #Pel·lícules fines #Cristal·lografia #Ciència dels materials #Làsers #Microelectrònica #Crystallography #Materials science #Lasers #Microelectronics |
Tipo |
info:eu-repo/semantics/article |