Ni-Mn-Ga thin films produced by pulsed laser deposition


Autoria(s): Tello, P. G.; Castaño, F. J.; O'Handley, Robert C., 1942-; Allen, Samuel M.; Esteve, M.; Labarta, Amílcar; Batlle Gelabert, Xavier
Contribuinte(s)

Universitat de Barcelona

Data(s)

02/03/2012

Resumo

Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films

Identificador

http://hdl.handle.net/2445/22088

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

Thin films

(c) American Institute of Physics, 2002

Palavras-Chave #Pel·lícules fines #Cristal·lografia #Ciència dels materials #Làsers #Microelectrònica #Crystallography #Materials science #Lasers #Microelectronics
Tipo

info:eu-repo/semantics/article