Superradiant emission in semiconductor diode laser structures

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed. © 1995-2012 IEEE.

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

White light emission from fiber pigtailed laser module

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm(2). The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

Thermal processing of strained In0.2Ga0.8As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It is found that rapid thermal annealing can improve the 77K photoluminescence efficiency and electron emission from the active layer, due to the removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of postgrowth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Bloch oscillation under a bichromatic laser: Dynamical delocalization and localization, persistent terahertz emission, and harmonics generation

A novel AC driving configuration is proposed for biased semiconductor superlattices, in which the THz driving is provided by an intense bichromatic cw laser in the visible light range. The frequency difference between two components of the laser is resonant with the Bloch oscillation. Thus, multi-photon processes mediated by the conduction (valence) band states lead to dynamical delocalization and localization of the valence (conduction) electrons, and to the formation and collapse of quasi-minibands. Thus, driven Bloch oscillators are predicted to generate persistent THz emission and harmonics of the dipole field, which are tolerant of the exciton and the relaxation effects.

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

Experimental study on K alpha X-ray emission from intense femtosecond laser-solid interactions

The characteristics of K alpha X-ray sources generated by p-polarized femtosecond laser-solid interactions are experimentally studied in the relativistic regime. By use of knife-edge image technique and a single-photon-counting X-ray CCD camera, we obtaine the source size, the spectrum and the conversion efficiency of the Ka X-ray sources. The experimental results show that the conversion efficiency of Ka photons reaches an optimum value of 7.08 x 10(-6)/sr at the laser intensity of 1.6 x 10(18) W/cm(2), which is different from the Reich's simulation results (Reich et al., 2000 Phys. Rev. Lett. 84 4846). We find that about 10% of laser energy is converted into the forward hot electrons at the laser intensity of 1.6 x 10(18) W/cm(2).

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Effect of microwave and He-Ne laser on enzyme activity and biophoton emission of Isatis indigotica fort

IEECAS SKLLQG

MEASUREMENT OF SPONTANEOUS EMISSION BRANCHING RATIOS IN MO(I) TRANSITIONS BY LASER-INDUCED SENSITIZED FLUORESCENCE

I. TNTRODUCTIONThe emission spectroscopic method is usually used to measure spontaneous emission branching ratios. As emission spectra cannot be detected in atomic beams, the laser-induced fluorescence or ion detection method is often used. When the fluorescence method is used to measure branching ratios, it is usually necessary to detect

Enhanced He-α emission from ‘smoked’ Ti targets irradiated with 400nm 45fs laser pulses

We present a study of He-like 1s(2)-1s2p line emission from solid and low-density Ti targets under similar or equal to 45 fs laser pulse irradiation with a frequency doubled Ti: Sapphire laser. By varying the beam spot, the intensity on target was varied from 10(15) W/cm(2) to 10(19) W/cm(2). At best focus, low density "smoked" Ti targets yield similar to 20 times more He-alpha than the foil targets when irradiated at an angle of 45 degrees with s-polarized pulses. The duration of He-alpha emission from smoked targets, measured with a fast streak camera, was similar to that from Ti foils.

He-like x-ray line emission from laser irradiated sources

Photon yields for the 1s(2)-1s2p (He-alpha) transition of He- like ions have been measured for laser irradiated, thin foils of Ti, V and Fe. The laser pulses were of 0.527 mum wavelength and of either 80 or 300 ps duration. The data shows significant shot-to-shot variation but the Ti data is broadly consistent with previous results. In this work, we extend the previous results to include, new elements, longer pulse lengths and yields measured for emission from both surfaces of the foils. We compare our data to simulations using a hydrodynamic code and a collisional radiative model.