Defeitos responsáveis pela isolação de GaAs irradiado com prótons

A Espectroscopia de Transientes de Níveis Profundos (DLTS – Deep Level Transient Spectroscopy) foi, detalhadamente, descrita e analisada. O processo de isolação por implantação em GaAs foi estudado. Sua dependência com a sub-rede, do As ou do Ga, em que o dopante é ativado foi investigada para material tipo-p. Semelhantes doses de implantação de prótons foram necessárias para se tornar semi-isolantes camadas de GaAs dopadas com C ou com Mg possuindo a mesma concentração de pico de lacunas livres. A estabilidade térmica da isolação nestas amostras foi medida. Diferenças no comportamento de recozimento destas apontaram a formação, provavelmente durante a referida etapa térmica, de uma estrutura diferente de defeitos em cada caso. Medidas de DLTS foram realizadas em amostras de GaAs tipo-n e tipo-p implantadas com prótons de 600 keV. A estrutura de picos observada apresentou, além de boa parte dos defeitos introduzidos para o caso de irradiação com elétrons, defeitos mais complexos. Um novo nível, com energia superior em ~0,64 eV ao valor correspondente ao topo da banda de valência, foi identificado nos espectros medidos em material tipo-p. A variação da concentração dos centros de captura introduzidos com diferentes etapas de recozimento foi estudada e comparada com o comportamento previamente observado para a resistência de folha em camadas de GaAs implantadas com prótons. Simulações foram feitas, indicando que a interpretação adotada anteriormente, associando o processo de isolação diretamente à formação de defeitos relacionados a anti-sítios, pode não estar completa.

Efeitos interfaciais em heteroestruturas quânticas nô-abruptas: GaAs/ALxGa1-xAs

Um minuncioso estudo das propriedades de confinamento em heterostructuras bidimensionais(poços quânticos) GaAs/AlxGa1_xAs, com interfaces graduais é realizado. Um modelo teórico que represente bem a variação da fração molar do alumínio nas interfaces, resultante do aparecimento de micro-rugosidades e ilhas durante os processos de crescimento e recozimento pós-crescimento da amostra, é elaborado. Vários perfis desta fração molar de alumínio nas interfaces são considerados. Soluções analíticas da equação de Schrodinger, na aproximação da massa efetiva constatne nas interfaces, resultando em equações transcendentais, que possibilitam a obtenção dos níveis de energia dos portadores, decorrentes do seu confinamento quântico, são apresentadas. Energias de ligação e de confinamento de excitons 2D, utilizando-se um método analítico e numerérico e a aproximação do potencial efetivo, são também calculadas. Resultados numéricos para os níveis de energia dos portadores e para as energias de ligação e de confinamento dos excitons 2D, em poços quânticos GaAs/Al0.35Ga0.65As não-abruptos, sem e com a presença de campo elétrico aplicado para vários perfis interfaciais da fração de molar, são mostrados. Para a obtenção desses resultados, faz-se uso do método dos degraus múltiplos e da técnica da matriz de transferência, e adota-se, como operador de energia cinética, o de Ben-Daniel e Duque para uma massa efetiva dependente da posição. Conclui-se que um modelo que leva em conta a existência de interfaces não-abruptas e seus diversos perfis é indispensável para uma melhor descrição das propriedades opto-eletrônicas de poços quânticos GaAs/AlxGa1-xAs, enquanto que a aproximação das interfaces abruptas apresenta-se bastante limitada

Two-colour photocurrent detection technique for coherent control of a single InGaAs/GaAs quantum dot

We present a two-colour photocurrent detection method for coherent control of a single InGaAs/GaAs self-assembled quantum dot. A pulse shaping technique provides a high degree of control over picosecond optical pulses. Rabi rotations on the exciton to biexciton transition are presented, and fine structure beating is detected via time-resolved measurements. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

High-energy transitions of shallow magnetodonors in a GaAs/Al0.3Ga0.7As multiple quantum well

The high-energy states of a shallow donor in a GaAs/Ga0.7Al0.3As multiple-quantum-well structure subjected to a magnetic field in the growth direction are studied both theoretically and experimentally. Effects due to higher confinement subbands as well as due to the electron-phonon interaction are investigated. We show that most of the peaks in the infrared photoconductivity spectrum are due to direct transitions from the ground state to the m = +/-1 magnetodonor states associated with the first subband, but transitions to the m = +/-1 states of the third subband are also apparent. The remaining photoconductivity peaks are explained by phonon-assisted impurity transitions.

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effects of varying curvature and width on the electronic states of GaAs quantum rings

Stationary states of an electron in thin GaAs elliptical quantum rings are calculated within the effective-mass approximation. The width of the ring varies smoothly along the centerline, which is an ellipse. The solutions of the Schrödinger equation with Dirichlet boundary conditions are approximated by a product of longitudinal and transversal wave functions. The ground-state probability density shows peaks: (i) where the curvature is larger in a constant-with ring, and (ii) in thicker parts of a circular ring. For rings of typical dimensions, it is shown that the effects of a varying width may be stronger than those of the varying curvature. Also, a width profile which compensates the main localization effects of the varying curvature is obtained.

Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.

Relationship between the optical gap and the optical-absorption tail breadth in amorphous GaAs

We study the relationship between the optical gap and the optical-absorption tail breadth for the case of amorphous gallium arsenide (a-GaAs). In particular, we analyze the optical-absorption spectra corresponding to some recently prepared a-GaAs samples. The optical gap and the optical-absorption tail breadth corresponding to each sample is determined. Plotting the optical gap as a function of the corresponding optical-absorption tail breadth, we note that a trend, similar to that found for the cases of the hydrogenated amorphous silicon and hydrogenated amorphous germanium, is also found for the case of a-GaAs. The impact of alloying on the optical-absorption spectrum associated with a-GaAs is also briefly examined. (C) 2004 American Institute of Physics.

Local and global magnetic properties of Zn1-xCoxO and Mn-doped GaAs thin films

Amorphous and crystalline thin films of Mn-doped(0.5%-10%) GaAs and crystalline thin films of Zn1-xCoxO(x = 3%-20%) were investigated by means of magnetic susceptibility and electron spin resonance (ESR). For the Mn-doped GaAs samples, our results show the absence of ferromagnetic ordering for the amorphous films in the 300 > T > 2 K temperature range, in contrast to the ferromagnetism found in crystalline films for T-C < 110 K. A single ESR line with a temperature independent g-value (g similar to 2) is observed for the amorphous films, and the behavior of this ESR linewidth depends on the level of crystallinity of the film. For the Mn-doped GaAs crystalline films, only a ferromagnetic mode is observed for T < TC when the film is ferromagnetic. Turning now the Zn1-xCoxO films, ferromagnetic loops were observed at room temperature for these films. The magnetization data show an increasing of the saturation magnetization M. as a function of x reaching a maximum value for x approximate to 10%. ESR experiments at T = 300 K in the same films show a strong anisotropic ferromagnetic mode (FMR) for x = 0.10.

Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate

Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.

Tailoring of heterostructures in a SnO2/TiO2 system by the oriented attachment mechanism

In order to verify the possibility of forming a heterostructure-i.e., a nanoparticle tailored by the junction of two or more different materials-through the oriented attachment (OA) mechanism, experiments with rutile TiO2 and cassiterite SnO2 as candidate materials were done, since they have similar crystallographic parameters. The experiments were carried out in hydrothermal conditions and in an in situ observation at the high resolution transmission electron microscopy. The results showed the formation of TiO2/SnO2 heterostructures, confirming the coexistence of rotation-alignment and oriented collision mechanisms, hypothesis of OA behavior proposed in previous theoretical works.

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.