Deposição de A/N por sputtering não reativo

In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6, 2 eV) with hexagonal wurtzite crystal structure, belonging to the group of new materials called III-V nitrides in which together with the gallium nitride and indium nitride have attracted much interest because they have physical and chemical properties relevant to new technological applications, mainly in microelectronic and optoelectronic devices. Three groups were deposited with thicknesses nanofilms time dependent on two substrates (glass and silicon) at a temperature of 25 ° C. The nanofilms AlN were characterized using three techniques, X-ray diffraction, Raman spectroscopy and atomic force microscopy (AFM), examined the morphology of these. Through the analysis of X-rays get the thickness of each sample with its corresponding deposition rate. The analysis of X-rays also revealed that nanofilms are not crystalline, showing the amorphous character of the samples. The results obtained by the technique, atomic force microscopy (AFM) agree with those obtained using the technique of X-rays. Characterization by Raman spectroscopy revealed the existence of active modes characteristic of AlN in the samples

Polaritons de exciton em super-redes semicondutoras

In this work we study the spectrum (bulk and surface modes) of exciton-polaritons in infinite and semi-infinite binary superlattices (such as, ···ABABA···), where the semiconductor medium (A), whose dielectric function depends on the frequency and the wavevector, alternating with a standard dielectric medium B. Here the medium A will be modeled by a nitride III-V semiconductor whose main characteristic is a wide-direct energy gap Eg. In particular, we consider the numerical values of gallium nitride (GaN) with a crystal structure wurtzite type. The transfer-matrix formalism is used to find the exciton-polariton dispersion relation. The results are obtained for both s (TE mode: transverse electric) and p (TM mode: transverse magnetic) polarizations, using three diferent kind of additional boundary conditions (ABC1, 2 e 3) besides the standard Maxwell's boundary conditions. Moreover, we investigate the behavior of the exciton-polariton modes for diferent ratios of the thickness of the two alternating materials forming the superlattice. The spectrums shows a confinement of the exciton-polariton modes due to the geometry of the superlattice. The method of Attenuated Total Reflection (ATR) and Raman scattering are the most adequate for probing this excitations

Caracterização magnética e estrutural de filmes depositados por gaiola catódica

Iron nitrite films, with hundred of nanometers thick, were deposited using the Cathodic cage plasma nitriding method, with a N2/H2 plasma, over a common glass substract. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry (XRD), atomic force microscopy (AFM) and vibrating sample magnetometer (VSM). XRD shows the formation of γ FeN phase and a combination of ζFe2N + ɛFe3N phases. The film s saturation magnetization and coercivity depends on morphology, composition, grain size and treatment temperature. Temperature raising from 250 ºC to 350 ºC were followed by an increase in saturation magnetization and film s surface coercivity on the parallel direction in relative proportion. This fact can be attributed to the grain sizes and to the different phases formed, since iron rich fases, like the ɛFe3N phase, emerges more frequently on more elevated treatment s temperature. Using this new and reasonably low cost method, it was possible to deposit films with both good adhesion and good magnetic properties, with wide application in magnetic devices

Optical and electrical diagnostics measurements of plasmas generated in aromatic compounds

Plasmas generated in de discharges in aromatic compounds have been used for several years in polymerization processes. The chemical kinetics developed in such a plasma environment are extremely complicated. Therefore it is extremely important to set up optical and electrical diagnostics in order to establish the kinetics of the film growth, In this work we studied de plasmas generated ill low-pressure atmospheres of benzene for different values of gas pressure and power coupled to the discharge. The pressure range varied from 0.2 to 1.0 mbar for electric power running from 4 to 25 W, the main chemical species observed within the discharge were CH, H and C. It was observed that the CH relative concentration increases continuously with the power in the range investigated. The electron temperature varied from 0.5 to 2.0 eV with the increase of the power, for a fixed value of gas pressure. The relative dielectric constant of the plasma polymerized benzene was kept around 4.8 from 100 Hz to 10 kHz, presenting a resonance near 25 kHz. This electric behaviour of the film was the same fur different conditions of polymeric film deposition, (C) 1997 Elsevier B.V. S.A.

Influence of solution treatment on the adsorption and morphology of poly(o-methoxyaniline) layer-by-layer films

It is shown that the adsorption and morphological properties of layer-by-layer films of poly(o-methoxyaniline) (POMA) alternated with poly(vinyl sulfonic acid) (PVS) are affected dramatically by different treatments of the POMA solutions employed to prepare the films. Whereas the dimension of the globular structures seen by atomic force microscopy increases non monotonically during film growth in parent POMA solution, owing to a competition of adsorption/desorption processes, it changes monotonically for the fractionated POMA. The roughness of the latter films depends on the concentration of the solution and saturates at a given size of the scan window. This allowed us to apply scaling laws that indicated a self-affine mechanism for adsorption of the treated POMA.

Structural and surface morphology characterizations of oriented LiNbO3 thin films grown by polymeric precursor method

Polymeric precursor solution was used to deposit LiNbO3 thin films by dip coating on sapphire substrates. The effects of processing variables, such as heat treatment conditions and number of deposited layers, on crystallinity and morphology of the final films were investigated. X-ray diffraction patterns show the oriented growth of the films. The rocking curves, obtained around the (006) LiNbO3 peak, revealed that the shape peak and the FWHM value were influenced by the processing variables. According to these parameters, some films presented very homogeneous dense and smooth surfaces, as shown by the SEM and AFM studies.

Application of non-isothermal cure kinetics on the interaction of poly(ethylene terephthalate) - Alkyd resin paints

Samples of paint (P), reused PET (PET-R) and paint/PET-R mixtures (PPET-R) were evaluated using DSC to verify their physical-chemical properties and thermal behavior. Films from paints and PPET-R are visually similar. It was possible to establish that the maximum amount of PET-R that can be added to paint without significantly altering its filming properties is 2%. The cure process (80-203°C) was identified through DSC curves. The kinetic parameters, activation energy (E a) and Arrhenius parameters (A) for the samples containing 0.5 to 1% of PET-R, were calculated using the Flynn-Wall-Ozawa isoconversional method. It was observed that for greater amounts of PET-R added, there is a decrease in the E a values for the cure process. A Kinetic compensation effect (KCE), represented by the equation InA=-2.70+0.31E a was observed for all the samples. The most suitable kinetic model to describe this cure process is the autocatalytic Šesták-Berggreen, model applied to heterogeneous systems. © 2007 Springer Science+Business Media, LLC.

Improvements of plasma immersion ion implantation (PIII) and deposition (PIII&D) processing for materials surface modification

Plasma immersion ion implantation (PIII) process is a three dimensional surface modification method that is quite mature and well known to the surface engineering community nowadays, especially to those working in the field of plasma-materials interaction, aiming at both industrial and academic applications. More recently, deposition methods have been added to PIII, the PIII&D, opening possibilities of broader range of applications of these techniques. So, PIII&D is becoming a routine method of surface modification, with the advantage of pushing up the retained dose levels limited by the sputtering due to ion implantation. Therefore, well adherent, thick, three-dimensional films without stress are possible to be achieved, at relatively low cost, using PIII&D. In this paper, we will discuss about a few PIII and PIII&D experiments that have been performed recently to achieve surface improvements in different materials: 1 - high temperature nitrogen PIII in Ti6Al4V alloy in which a deep nitrogen rich treated layer resulted in surface improvements as increase of hardness, corrosion resistance and resistance to wear of the Ti alloy; 2 - nanostructures in ZnO films, obtained by PIII&D of vaporized & ionized Zn source; 3 - combined implantation and deposition of calcium for biomaterial activity of Ti alloy (PIII&D), allowing the growth of hydroxyapatite in a body solution; 4 - magnetron sputtering deposition of Cr that was enhanced by the glow discharge Ar plasma to allow implantation and deposition of Cr on SAE 1070 steel (PIII&D) resulting in surfaces with high resistance to corrosion; and 5 - implantation of nitrogen by ordinary PIII into this Cr film, which improved resistance to corrosion, while keeping the tribological properties as good as for the SAE 1070 steel surface. © 2012 Elsevier B.V.

Fabricação e caracterização morfológica de filmes layer-by-layer de DODAB/FTALOCIANINA de níquel

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação de filmes policristalinos de GaN pela técnica de sputtering reativo a baixas temperaturas de substrato

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Cálculos de estrutura eletrônica de materiais mediante combinação linear de orbitais atômicos

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Migração FD e FFD com aproximações de grande abertura angular

Métodos de migração baseados na equação da onda unidirecional apresentam limitações no imageamento de refletores com forte mergulho e no tratamento de ondas evanescentes. Utilizando a expansão de Padé complexa na solução da equação da onda unidirecional para imageamento em geofísica é possível tratar ondas evanescentes, estabilizando a migração e dispensando um tratamento especial para absorção nas fronteiras do domínio. Utilizando várias parcelas na expansão de Padé, refletores com forte mergulho podem ser corretamente migrados. Nesta dissertação aplicamos a equação da onda unidirecional com expansão de Padé complexa para implementar dois algoritmos de migração em profundidade pré e pós empilhamento: a migração por diferenças finitas (FD) e a migração por diferenças finitas e Fourier (FFD). O estudo das curvas de dispersão e da resposta impulsiva dos operadores de migração nos permitiu escolher o número adequado de parcelas na expansão de Padé e os coeficientes da expansão que garantem estabilidade à continuação do campo de onda para um ângulo de mergulho máximo prescrito. As implementações foram validadas nos dados Marmousi e no modelo de domo de sal da SEG/EAGE mostrando que refletores com forte mergulho foram corretamente migrados, mesmo na presença de forte variação lateral de velocidade. Esses resultados são comparados com outros métodos de migração baseados na equação da onda unidirecional ressaltando a qualidade da aproximação estudada neste trabalho.

Otimização do processo de deposição de filmes TiO2:Mn usando RF magnetron sputtering

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Sistemas bioinspirados aplicados no estudo de interação e sensoriamento de derivados xantênicos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)