988 resultados para 361.02
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The aim of this campaign was the trawl exploration of the Ivoirian continental shelf at the depth of 10 to 120 metres.
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This publication gives the results of bottom trawlings made during the cruises CHALCI 84-01 and CHALCI 84-02 by the oceanographic research vessel "Andre NIZERY" sur le plateau continental ivoirien.
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This publication gives the results of bottom trawlings made during the cruises Chalci 83.01 and Chalci 83.02 by the oceanographic research vessel "André Nizery", on the ivorian continental shelf. The publication content is: - an introduction explaining the form of results; the trawl recording cards with the characteristics of trawl and the detail of catches by species; the length frequency distributions of the measured samples.
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The main objective of the visit was to share the success of Marine Protected Area (MPA) management in Malaysia with Bangladeshi counterparts, representatives of donor organizations, NGOs and researchers.
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从腾冲热海分离到最高生长温度达80℃的一株嗜热非芽孢菌RH99-02菌株,经鉴定属Thermus属,对其所产类胡萝卜素进行了吸收光谱扫描及薄层层析分析。发酵研究表明振荡培养时的菌体生物量和色素产量上均高于静置培养,培养至50h菌体生物量和色素产量达到最大值,菌体色素产量为762μg/g干重。
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目的了解微囊藻毒素(MC)LR对L-02细胞的毒性机制。方法以L-02细胞为材料,用不同浓度的MCLR处理该细胞,观察了细胞增殖能力、细胞形态改变、乳酸脱氢酶(LDH)泄漏、细胞凋亡率及凋亡相关基因等一系列指标的变化。结果 MTT细胞增殖实验可知,MCLR在24 h内对L-02细胞有轻微的抑制作用,随后却促进细胞增殖。48 h处理对 LDH泄漏没有显著影响,延时处理导致LDH泄漏发生,且MCLR浓度越高,LDH泄漏越严重,此结果显示发生了细胞氧化损伤。光镜下50μg/ml的毒素浓度在60 h处理后可造成明
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从鸭儿湖氧化塘中分离出具有分解对硝基酚能力的细菌Pseudomonas sp.,代号CTP-02。在实验室条件下,细菌培养物降解对硝基酚的速度与时间之间的动力学方程为dc/dt=-K_1t-K_2,细菌降解对硝基酚的最适温度为35℃,最适pH为7.5。CTP-02菌降解对硝基酚过程中首先发生脱硝基作用。
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The growth and energy budget for F-2 'all-fish' growth hormone gene transgenic common carp Cyprinus carpio of two body sizes were investigated at 29.2 degrees C for 21 days. Specific growth rate, feed intake, feed efficiency, digestibility coefficients of dry matter and protein, gross energy intake (I-E), and the proportion of I-E utilized for heat production (H-E) were significantly higher in the transgenics than in the controls. The proportion of I-E directed to waste products [faecal energy (F-E) and excretory energy loss (Z(E) + U-E) where Z(E) is through the gills and U-E through the kidney], and the proportion of metabolizable energy (M-E) for recovered energy (R-E) were significantly lower in the transgenics than in the controls. The average energy budget equation of transgenic fish was as follows: 100 I-E = 19.3 F-E + 6.0 (Z(E) + U-E) + 45.2 H-E + 29.5 R-E or 100 M-E = 60.5 H-E + 39.5 R-E. The average energy budget equation of the controls was: 100 I-E = 25.2 F-E + 7.4 (Z(E) + U-E) + 35.5 H-E + 31.9 R-E or 100 M-E = 52.7 H-E + 47.3 R-E. These findings indicate that the high growth rate of 'all-fish' transgenic common carp relative to their non-transgenic counterparts was due to their increased feed intake, reduced lose of waste productions and improved feed efficiency. The benefit of the increased energy intake by transgenic fish, however, was diminished by their increased metabolism.
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Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.
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于2010-11-23批量导入
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The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.