Silicon Chips and Nano Devices

A look at the Southampton Nanfabrication Centre where electro-photonic research is carried out and the AMD company's industrial processes for creating commercial quantities of silicon computing devices.

El detector de colors. 'El detector de colores'.

Resumen del vídeo en catalán

Tecnología. Construcción de un detector de humedad.

En la cub.: Secundaria. Acompañado de : Tecnología. Estructura

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature

Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

Oxidation of silicon: further tests for the interfacial silicon emission model

The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 Ã). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model’s correctness

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si

Atmospheric downwelling longwave radiation at the surface during cloudless and overcast conditions. Measurements and modeling

Atmospheric downwelling longwave radiation is an important component of the terrestrial energy budget; since it is strongly related with the greenhouse effect, it remarkably affects the climate. In this study, I evaluate the estimation of the downwelling longwave irradiance at the terrestrial surface for cloudless and overcast conditions using a one-dimensional radiative transfer model (RTM), specifically the Santa Barbara DISORT Atmospheric Radiative Transfer (SBDART). The calculations performed by using this model were compared with pyrgeometer measurements at three different European places: Girona (NE of the Iberian Peninsula), Payerne (in the East of Switzerland), and Heselbach (in the Black Forest, Germany). Several studies of sensitivity based on the radiative transfer model have shown that special attention on the input of temperature and water content profiles must be held for cloudless sky conditions; for overcast conditions, similar sensitivity studies have shown that, besides the atmospheric profiles, the cloud base height is very relevant, at least for optically thick clouds. Also, the estimation of DLR in places where radiosoundings are not available is explored, either by using the atmospheric profiles spatially interpolated from the gridded analysis data provided by European Centre of Medium-Range Weather Forecast (ECMWF), or by applying a real radiosounding of a nearby site. Calculations have been compared with measurements at all sites. During cloudless sky conditions, when radiosoundings were available, calculations show differences with measurements of -2.7 ± 3.4 Wm-2 (Payerne). While no in situ radiosoundings are available, differences between modeling and measurements were about 0.3 ± 9.4 Wm-2 (Girona). During overcast sky conditions, when in situ radiosoundings and cloud properties (derived from an algorithm that uses spectral infrared and microwave ground based measurements) were available (Black Forest), calculations show differences with measurements of -0.28 ± 2.52 Wm2. When using atmospheric profiles from the ECMWF and fixed values of liquid water path and droplet effective radius (Girona) calculations show differences with measurements of 4.0 ± 2.5 Wm2. For all analyzed sky conditions, it has been confirmed that estimations from radiative transfer modeling are remarkably better than those obtained by simple parameterizations of atmospheric emissivity.

Integració 3D de detectors de píxels híbrids

La miniaturització de la industria microelectrònica és un fet del tot inqüestionables i la tecnologia CMOS no n'és una excepció. En conseqüència la comunitat científica s'ha plantejat dos grans reptes: En primer lloc portar la tecnologia CMOS el més lluny possible ('Beyond CMOS') tot desenvolupant sistemes d'altes prestacions com microprocessadors, micro - nanosistemes o bé sistemes de píxels. I en segon lloc encetar una nova generació electrònica basada en tecnologies totalment diferents dins l'àmbit de les Nanotecnologies. Tots aquests avanços exigeixen una recerca i innovació constant en la resta d'àrees complementaries com són les d'encapsulat. L'encapsulat ha de satisfer bàsicament tres funcions: Interfície elèctrica del sistema amb l'exterior, Proporcionar un suport mecànic al sistema i Proporcionar un camí de dissipació de calor. Per tant, si tenim en compte que la majoria d'aquests dispositius d'altes prestacions demanden un alt nombre d'entrades i sortides, els mòduls multixip (MCMs) i la tecnologia flip chip es presenten com una solució molt interessant per aquests tipus de dispositiu. L'objectiu d'aquesta tesi és la de desenvolupar una tecnologia de mòduls multixip basada en interconnexions flip chip per a la integració de detectors de píxels híbrids, que inclou: 1) El desenvolupament d'una tecnologia de bumping basada en bumps de soldadura Sn/Ag eutèctics dipositats per electrodeposició amb un pitch de 50µm, i 2) El desenvolupament d'una tecnologia de vies d'or en silici que permet interconnectar i apilar xips verticalment (3D packaging) amb un pitch de 100µm. Finalment aquesta alta capacitat d'interconnexió dels encapsulats flip chip ha permès que sistemes de píxels tradicionalment monolítics puguin evolucionar cap a sistemes híbrids més compactes i complexes, i que en aquesta tesi s'ha vist reflectit transferint la tecnologia desenvolupada al camp de la física d'altes energies, en concret implantant el sistema de bump bonding d'un mamògraf digital. Addicionalment s'ha implantat també un dispositiu detector híbrid modular per a la reconstrucció d'imatges 3D en temps real, que ha donat lloc a una patent.

Improved simulation of water vapour and clear-sky radiation using 24 hour forecasts from ERA40

Monthly mean water vapour and clear-sky radiation extracted from the European Centre for Medium Range Weather Forecasts 40-year reanalysis (ERA40) forecasts are assessed using satellite observations and additional reanalysis data. There is a marked improvement in the interannual variability of column-integrated water vapour (CWV) over the oceans when using the 24-hour forecasts compared with the standard 6-hour forecasts products. The spatial distribution of CWV are well simulated by the 6-hour forecasts; using the 24-hour forecasts does not degrade this simulation substantially and in many cases improves on the quality. There is also an improved simulation of clear-sky radiation from the 24-hour forecasts compared with the 6-hour forecasts based on comparison with satellite observations and empirical estimates. Further work is required to assess the quality of water vapour simulation by reanalyses over land regions. Over the oceans, it is recommended that 24-hour forecasts of CWV and clear-sky radiation are used in preference to the standard 6-hour forecast products from ERA40

Observations of the diurnal cycle of outgoing longwave radiation from the Geostationary Earth Radiation Budget instrument

The Geostationary Earth Radiation Budget instrument on Meteosat-8, located over Africa, provides unprecedented temporal sampling (~17 minutes) of the broadband emitted thermal and reflected solar radiances. We analyse the diurnal cycle of the outgoing longwave radiation (OLR) fluxes derived from the thermal radiances for July 2006. Principal component (PC) analysis separates the signals of the surface temperature response to solar heating and of the development of convective clouds. The first two PCs explain most of the OLR variations: PC1 (surface heating) explains 82.3% of the total variance and PC2 (cloud development) explains 12.8% of the variance. Convection is initiated preferentially over mountainous regions and the cloud then advects downstream in the ambient flow. Diurnal variations are much weaker over the oceans, but a coherent signal over the Gulf of Guinea suggests that the cloudiness is modulated by the diurnally varying contrast between the Gulf and the adjacent land mass.