Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions

Surface damage of gallium nitride films irradiated by Arq+ (6 ≤ q ≤ 16) ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120 keV≤ Ek ≤ 220 keV). For q ≤ 14, surface of the irradiated region iscovered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state...

Size modification of Au nanoparticles induced by slow highly charged ions Ar-40(q+) irradiation

Size modification of Au nanoparticles (NPs), deposited on the Au-thick film surface and irradiated by slow highly charged ions (SHCI) 40Arq+ (3 6 q 6 12) with fixed low dose of 4.3 1011 ions/cm2 and various energy ranging from 74.64 to 290.64 keV at room temperature (293.15 K), was investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The effect of projectile kinetic energy on the modified size of NPs was explored by an appropriate choice of the fixed process parameters such as ion flux, irradiation temperature, incident angle, irradiation time, etc. The morphological changes of NPs were interpreted by models involving collisional mixing, Ostwald ripening (OR) and inverse Ostwald ripening (IOR) of spherical NPs on a substrate. A critical kinetic energy as well as a critical potential energy of the projectile in the Au NPs size modification process were observed.

The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

Annealing effects in silicon implanted with helium

Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523-1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature. (C) 2008 Elsevier B.V. All rights reserved.

Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Effects of helium and oxygen common implantation in silicon wafer

Defect engineering for SiO2] precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen (STMOX). Cavities are created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120keV 8.0 x 10(16) cm(-2) O ions. The O ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectional transmission electron microscopy (XTEM), Fourier transform infrared absorbance spectrometry (FTIR) and atomic force microscopy (AFM) measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.

Surface morphology of He-implanted single-crystalline silicon

Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0x10(16) to 2.0x10(17) ions/cm(2) and subsequently thermally annealed at 800 degrees C for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0 x 10(16) ions /cm(2) implanted sample surface; spherical-shaped blisters with an average height wound 10.0nm were found on the 5.0 x 10(16) ions/cm(2) implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0 X 10(17) ions /cm(2). Exfoliations occurred on the sample surface to a dose of 2.0 x10(17) ions /cm(2). Mechanisms underlying the surface change were discussed.

The effects of the annealing time on helium implantation in Si

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved.

One-step preparation of hybrid materials of polyacrylamide networks and gold nanoparticles

Hybrid materials of polyacrylamide networks and gold nanoparticles were prepared by directly heating an aqueous solution containing HAuCl4, acrylamide, N,N'-methylenebisacrylamide, and sodium sulfite (Na2SO3). Acrylamide, N,N'-methylenebisacrylamide, and Na2SO3 were used as monomers, crosslinking agent, and initiator, respectively.

Layer-by-layer assembly of biologically inert inorganic ions/DNA multilayer films for tunable DNA release by chelation

In this work, we illustrate a simple chelation-based strategy to trigger DNA release from DNA-incorporated multilayer films, which were fabricated through the layer-by-layer (LbL) assembly of DNA and inorganic zirconium (IV) ion (Zr4+). After being incubated in several kinds of chelator solutions, the DNA multilayer films disassembled and released the incorporated DNA. This was most probably due to the cleavage of coordination/electrostatic interactions between Zr4+ and phosphate groups of DNA. Surface plasmon resonance (SPR), UV-vis spectrometry and atomic force microscopy (AFM) were used to characterize the assembly and the disassembly of the films.

Sensing H2O2 with layer-by-layer assembled Fe3O4-PDDA nanocomposite film

It was found that Fe3O4 nanoparticles (Fe3O4 NPs) possess intrinsic enzyme mimetic activity similar to that found in natural peroxidase. Here, we applied Fe3O4 NPs to the construction of efficient electrochemical sensor to detect the concentration of hydrogen peroxide. The sensor was fabricated with layer-by-layer assembly of Fe3O4 NPs and poly(diallyldimethylammonium chloride) (PDDA) through the electrostatic interaction, and the multilayer film was characterized with UV-vis absorption spectra, atomic force microscopy, and cyclic voltammetry.

Surface-enhanced Raman scattering from surfactant-free 3D gold nanowire networks substrates

A useful method for the fabrication of three-dimensional gold nanowire networks based on the chemical reduction of HAuCl4 with trisodium citrate was presented. The coverage of the 3D gold nanowire networks was tunable by altering precursor concentration. The as-prepared 3D gold nanowire networks could be used as surface-enhanced Raman scattering (SERS) substrates and examined by 4-aminothiophenol (4-ATP) as a probe molecules.

Layer-by-layer assembly of viral capsid for cell adhesion

Cowpea mosaic virus (CPMV)-based thin films are biologically active for cell culture. Using layer-by-layer assembly of CPMV and poly(diallyldimethylammonium chloride), quantitatively scalable biomolecular surfaces were constructed, which were well characterized using quartz crystal microbalance, UV-vis and atomic force microscopy. The surface coverage of CPMV nanoparticles depended on the adsorption time and pH of the virus solution, with a greater amount of CPMV adsorption occurring near its isoelectric point. It was found that the adhesion and proliferation of NIH-3T3 fibroblasts can be controlled by the coverage of viral particles using this multilayer technique.

Effect of the nature of annealing solvent on the morphology of diblock copolymer blend thin films

The morphologies and structures for the thin film of blend systems consisting of two asymmetric polystyrene-block-polybutadiene (SB) diblock copolymers induced by annealing in the vapor of different solvents, namely, cyclohexane, benzene, and heptane, which have different selectivity or preferential affinity for a certain block, were investigated by tapping mode atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results revealed that even a slight preferential affinity of good solvent for one block would strongly alter the morphology of the blend thin film.

Reversible Nanopatterning on Self-Assembled Monolayers on Gold

The reversible fabrication of positive and negative nanopatterns on 1-hexadecanethiol (HDT) self-assembled monolayers (SAMs) on Au(111) was realized by bias-assisted atomic force microscopy (AFM) nanolithography using an ethanol-ink tip. The formation of positive and negative nanopatterns via the bias-assisted nanolithography depends solely on the polarity of the applied bias, and their writing speeds can reach 800,um/s and go beyond 1000 mu m/s, respectively. The composition of the positive nanopatterns is gold oxide and the nanometer-scale gold oxide can be reduced by ethanol to gold, as proved by X-ray photoelectron spectroscopy (XPS) analysis, forming the negative nanopatterns which can be refilled with HDT to recover the SAMs.