Steady-state bright-dark vector spatial solitons in biased photorefractive-photovoltaic crystals

We show that bright-dark vector solitons are possible in biased photorefractive-photovoltaic crystals under steady-state conditions, which result from both the bulk photovoltaic effect and the spatially nonuniform screening of the external bias field. The analytical solutions of these vector solitons can be obtained in the case of \sigma\ much less than 1, where sigma is the parameter controlling the intensities of the two optical beams. In the limit of -1 < sigma much less than 1, these vector solitons can also be determined by use of simple numerical integration procedures. When the bulk photovoltaic effect is neglectable, these vector solitons are bright-dark vector screening solitons studied previously in the \sigma\ much less than 1 regime, and predict bright-dark vector screening solitons in the -1 < sigma less than or equal to 1 regime. When the external bias field is absent, these vector solitons predict bright-dark vector photovoltaic solitons in closed and open circuits. (C) 2002 Elsevier Science B.V. All rights reserved.

Quakes in solid quark stars

A starquake mechanism for pulsar glitches is developed in the solid quark star model. It is found that the general glitch natures (i.e., the glitch amplitudes and the time intervals) could be reproduced if solid quark matter, with high baryon density but low temperature, has properties of shear modulus mu(c) = 10(30-34) erg/cm(3) and critical stress sigma(c) = 10(18similar to24) erg/cm(3). The post-glitch behavior may represent a kind of damped oscillations. (C) 2004 Elsevier B.V. All rights reserved.

The radio counter-jet of the QSO 3C 48

We present multi- frequency radio observational results of the quasar 3C 48. The observations were carried out with the Very Large Array ( VLA) at five frequencies, 0.33, 1.5, 4.8, 8.4, and 22.5 GHz, and with the Multi- Element Radio Linked Interferometer Network ( MERLIN) at the two frequencies of 1.6 and 5 GHz. The source shows a one- sided jet to the north within 1", which then extends to the northeast and becomes diffuse. Two bright components ( N2 and N3), containing most of the flux density, are present in the northern jet. The spectral index of the two components is alpha(N2) similar to -0.99 +/- 0.12 and alpha(N3) similar to - 0.84 +/- 0.23 ( S proportional to nu(alpha)). Our images show the presence of an extended structure surrounding component N2, suggestive of strong interaction between the jet and the interstellar medium ( ISM) of the host galaxy. A steep- spectrum component, labelled S, located 0.25 " southwest to the flat- spectrum component which could be the core of 3C 48, is detected at a significance of > 15 sigma. Both the location and the steepness of the spectrum of component S suggest the presence of a counter- jet in 3C 48.

高稳定性安培生物传感器的研制

生物传感器已发展成为一种新型的分析手段，并被广泛应用于临床、环境、食品等领域。本论文从合成新型生物相容性固定化载体、寻找高稳定性的酶及建立新的有机相体系三方面对酶电极进行了研究。主要结果如下：1. 采用有机-无机杂化的方法，首次将无机玻璃材料同高分子水凝胶结合起来，制备了一种新的固定化载体。我们对其制备条件进行了优化，结果表明：正硅酸乙酯与水的最佳比率为1:4，而水凝胶有最佳含量为38.3%。这种掺杂材料一方面春服了两种材料各自的缺点，即溶胶-凝胶陶瓷材料的开裂和水凝胶的溶胀；另一方面保留了水凝胶的生物相容性和无机玻璃的物理刚性、高稳定性等优点。红外、电镜和QCM实验证明，膜中含有大量的羟基和氢键，且两种组分形成互穿网络。另外，当酶分子被包埋于溶胶-凝胶复合膜中后，没有发现酶的泄漏。2. 用此种杂化材料固定了葡萄糖氧化酶、辣根过氧化物酶及酷氨酸酶，制备了薄膜型生物传感器。有机-无机复合膜较薄从而具有短的扩散路径，因此传感器的响应很快。另外，由于杂化膜的高生物相容性和稳定性，这些酶固定后都保持了高的生物活性，故制备的生物传感器具有高的灵敏度和好的稳定性等优点。这些证明溶胶-凝胶掺杂法是制备高稳定的生物传感器的普适方法。3. 通过双水相萃取、Mono-Q柱层析和Butylsuperose疏水层析等纯化步骤，从商品大豆的种皮中提纯了一种高稳性的大豆过氧化物酶。该酶的活力为200 pyrogallol U/mg，大大高于Sigma公司产品（130 pyrogallol U/mg)。此过氧化物酶可在从pH3-10范围内维持其活性，并且显示了不寻常的热稳定性（60 ℃时半衰期为20小时）。我们用此酶首次制备出在酸性条件下可稳定使用的过氧化氢传感器。在低的pH值时，酶电极具有快的响应，高的灵敏度和好的长期稳定性。此酸稳定传感器的提出扩展了生物传感器的应用领域。4. 发展了一种新型的可用于监测惰性有机溶剂的安培传感器。EQCM和电化学实验阐明了其机理：注入的有机溶剂富集底物探针酚，降低了酶膜中酚的浓度，故引起传感器响应的下降。因为电流的下降正比于所加入的有机溶剂的数量，因此可以用安培传感器来定量测定电化学惰性的有机溶剂。对某有机溶剂的灵敏度和检测限依赖于酶载量及固定化载体和底物探针的憎水性。该传感器可以用于废水分析和环境临测，大大地延伸了生物传感器的适用范围。5. 将生物膜与传感器技术结合起来，制备了双层磷脂膜生物传感器。采用浸涂及浇铸等新的固定化方法，将辣根过氧化物酶分别固定到双层及多层磷脂膜中，在玻碳电极上制备了过氧化氢传感器。由于生物膜所带的负电荷能排斥抗坏血酸、尿酸等阴离子物质，从而较大的消除了杂质的干扰。另外由于生物膜在电极表面上为酶提供了生物相容的微环境，故实现了辣根过氧生物酶与玻碳电极之间的直接电子转移，为制备第三代生物传感器奠定了基础。

Ras 超家族蛋白的起源演化研究

Ras 超家族蛋白是真核生物中普遍存在的一类小分子GTP 结合蛋白。它们 具有高度保守的GTP 结合结构域，根据序列结构和细胞功能被分为七个家族： Sar1、Arf、SRβ、Ran、Rab、Rho 和Ras。这些蛋白分别行使着真核生物特有的 细胞功能，诸如运输小泡的形成和转运（Sar1、Arf、Rab），胞质骨架的建成（Rho）， 细胞核-胞质运输及核膜重建（Ran）等，其起源演化和真核细胞的起源密切相关。 本文利用生物信息学手段和分子生物学实验调查研究了原核生物和原生生物中 Ras 超家族蛋白同源物的存在情况，并进行了分子系统分析，对Ras 超家族蛋白 的起源演化问题进行了较为深入、系统的探讨。获得了以下结果和结论： 1）通过原核生物基因组的搜索和序列结构分析，在一些真细菌中首次鉴定 出了高度相似于真核生物Ras 超家族蛋白的原核生物同源物，且实验证明它们的 基因具有表达活性；在原细菌中的产甲烷菌和热原体中也发现有序列分歧较大的 同源物。并在更多的真细菌种类中鉴定出了更多的前人已报道的另一种小分子 GTP 结合蛋白—MglA。序列比对分析表明MglA 蛋白具有自己独特的序列特征， 与真核生物的Ras 超家族蛋白序列差异较大。进一步的分子系统分析显示：真核 生物Ras 超家族蛋白的七个家族中，Ran、Rab、Rho 和Ras 等四个家族聚在一 起，上述我们所鉴定的真细菌的Ras 超家族蛋白同源物则紧聚在其外围；真核生 物的另三个家族（Sar1、Arf、SRβ）聚成另一枝，并接着与产甲烷原细菌的的同 源物及真细菌的MglA 蛋白聚在一起。这些结果表明：Ras 超家族蛋白不是前人 所认为的为真核生物所特有，实际上在一些原核生物中就已产生；真核生物Ras 超家族蛋白的祖先也不太可能是前人所认为的为真细菌的MglA；真核生物Ras 超家族蛋白的七个家族可能有两种不同的起源：Ran、Rab、Rho 和Ras 等可能 来源于蓝细菌或蛋白菌，或二者的共同祖先，而Sar1、Arf 和SRβ 可能来源于产 甲烷原细菌，这也可能反映了真核细胞“融合起源”的历史。 2）通过搜索一些较为低等的单细胞真核生物——原生生物基因组中Ras 超 家族蛋白，并结合一系列其他处在不同进化地位真核生物的Ras 超家族蛋白进行 分析，发现Sar1、Arf、Rab 和Ran 家族的蛋白在真核生物中普遍存在，而SRβ、 Rho 和Ras 家族蛋白在有些真核生物中未找到。根据各家族蛋白在真核生物中的分布情况推测在真核生物的最近共同祖先中存在的Ras 超家族蛋白可能有下列 两种情况：（1）最近的共同祖先已经具有了所有七个家族的蛋白，并且至少有 11 个成员：1 个Sar1、1 个SRβ、3 个Arf（Arf1、Arl1、Arl2）、3 个Rab（Rab1、 Rab6、Rab11）、1 个Ran、1 个Rho（Rac）和1 个Ras（RheB）。因而，部分真 核生物中缺少SRβ、Rho 和Ras 家族蛋白很可能是因基因丢失所致。植物中Ras 家族蛋白的缺少应该是由于在进化早期，其祖先绿藻丢失了单个Ras 家族蛋白基 因所致；（2）根据Cavalier-Smith 的真核生物划分为单鞭毛（变形虫类、真菌和 后生动物）和双鞭毛（藻类、植物和除变形虫外的原生动物）两大类的分类观点， 真核生物最近的共同祖先可能只具有除Ras 家族而外的六个家族的成员，而Ras 家族蛋白则是在此两大类群分化以后在单鞭毛类生物中才产生的，多数双鞭毛类 生物如原生动物、绿藻和植物中没有Ras 的情况应该是一种祖征，而个别双鞭毛 类生物如红藻具有的Ras 家族蛋白则很可能是从单鞭毛类生物那里水平基因转 移而来的。至于SRβ 和Rho 家族蛋白在部分物种中的缺少，则还是可能因为基 因丢失所致。此外，变形虫类生物中大量的Ras 超家族蛋白提示基因组的大小或 进化地位的高低并不是Ras 超家族蛋白成员多少的决定性因素，而细胞相应生理 活动的需求才是家族成员增多的关键。

微生物对抗菌肽耐受的诱导及耐受机理初步研究

抗菌肽是一类具有强大杀菌能力的肽类分子，同时还具有离子调节、免疫调节、蛋白酶抑制剂和自由基清除等其他生物活性。现已鉴定的抗菌肽超过1,200 种，几乎存在于所有生物种类中。在抗生素耐受严重的今天，抗菌肽极有潜力成为新型的有效抗菌药物，许多抗菌肽已进入临床前研究或临床研究。在本论文中，我们选择了无指盘臭蛙（Odorrana grahami）来源的三种抗菌肽（Brevinin 2E-OG1、Nigrocin-OG4 和Palustrin-OG1），单独或组合使用，以藤黄微球菌（Micrococcus luteus）、枯草芽孢杆菌（Bacillus subtilis）和白假丝酵母菌（Candida albicans）为研究对象，进行微生物对抗菌肽耐受性的实验诱导；并通过检测胞外蛋白酶活性、蛋白质组学等方法对微生物耐受抗菌肽机制进行初步的研究。将微生物培养于含有低浓度抗菌肽（单独使用或组合使用）培养基中，每日转接一次，每十次酌情提高抗菌肽浓度。80 次转接后，除藤黄微球菌未对 Palustrin-OG1 产生耐受外，其余所有的实验菌株均表现出对所用三种抗菌肽的耐受。但是Palustrin-OG1 与Brevinin 2E-OG1 或Nigrocin-OG4 联合使用能在一定程度上降低耐受性。将诱导后细菌于不含抗菌肽条件下培养，转接5 次后，对耐受现象无影响，说明这种耐受是可以稳定遗传的。抗菌肽耐受机制之一是分泌蛋白酶水解胞外抗菌肽，我们通过两种方式检测胞外蛋白酶活性，一种是检测发酵液的酪蛋白水解活性，另一种是检测发酵液处理抗菌肽后对抗菌活性的影响。结果发现枯草芽孢杆菌和藤黄微球菌发酵液存在着蛋白酶活性，推测胞外蛋白酶可能与二者对抗菌肽的耐受有关；而白假丝酵母菌发酵液中未检测到蛋白酶活性。另外，我们还通过蛋白质组学的手段对枯草芽孢杆菌耐受机制进行了初步的研究，鉴定了5 个差异表达的蛋白，表达上调的蛋白有yraA（功能未知）、Tpx （巯基过氧化物酶，Thiol peroxidase）、pdhD（二氢硫辛酰胺脱氢酶，dihydrolipoamide dehydrogenase），表达下调的有cotN/TasA（芽孢膜相关蛋白，spore coat-associated protein）和gapA（三磷酸甘油醛脱氢酶，Glyceraldehyde 3-phosphate dehydrogenase 1 ，GAPDH）。yraA 和Tpx 都由Spx 调控，yraA 可以水解小肽增加自由氨基酸，而自由氨基酸增多时gapA、tasA 表达水平会下降，Spx 是由sigma-M 因子调控的，所以我们推测sigma-M 因子在B. subtiis 对抗菌肽耐受中起到了重要的作用。总之，本研究发现抗菌肽的联合作用会减缓微生物对其耐受的程度，为抗菌肽类药物研发提供了一种新思路；同时对抗菌肽耐受机制的初步研究也为今后的深入研究打下了基础。另外，我们还设计了一种新型的抗菌肽系统命名方法，并构建了昆明动物研究所抗菌肽数据库。

THE EFFECT OF PASSIVATION OF BORON DOPANTS BY HYDROGEN IN NANO-CRYSTALLINE AND MICROCRYSTALLINE SILICON FILMS

It is well known that the value of room-temperature conductivity sigma(RT) of boron-doped silicon films is one order lower than that of phosphorus-doped silicon films, when they are deposited in an identical plasma-enhanced chemical vapour deposition system. We use surface acoustic wave and secondary-ion mass spectrometry techniques to measure the concentration of total and electrically active boron atoms. It is shown that only 0.7% of the total amount of incorporated boron is electrically active. This is evidence that hydrogen atoms can passivate substitutional B-Si bonds by forming the neutral B-H-Si complex. By irradiating the boron-doped samples with a low-energy electron beam, the neutral B-H-Si complex converts into electrically active B-Si bonds and the conductivity can be increased by about one order of magnitude, up to the same level as that of phosphorus-doped samples.

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

Dislocation movement in nitrogen-doped Czochralski silicon

Dislocation movement in N-doped Czochralski silicon (Cz-Si) was surveyed by four point bend method. Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. The order of measured dislocation movement velocities, at 700 degrees C less than or equal to T less than or equal to 800 degrees C and under resolved stress sigma=4.1 kg/mm(2), was V-Sb.O > V-n.Sb.O>V-N.O. The experiments showed that nigtrogen doping could retard the movement of dislocations.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Nd3+-doped LaF3 nanoparticles with a larger emission cross-section

A series of Nd3+-doped LaF3 nanoparticles with Nd3+ concentrations from 0.5 to 10 mol% were synthesized. The fluorescence intensity and lifetime of the nanoparticles at various Nd3+ doping concentration were investigated. The nanoparticles displayed strongest fluorescence intensity at 3 mol% Nd3+ concentration. Eighty-eight percentage quantum efficiency was obtained when the Nd3+ concentration was 0.5 mol%. Optical properties of nanoparticles were studied according to Judd-Ofelt theory. A larger emission cross-section, sigma(em), for F-4(3/2) -> I-4(11/2) transition of the Nd3+ ion was obtained as 3.21 x 10(-20) cm(2), which was two times of the currently reported value. The larger emission cross-section and strong fluorescence intensity demonstrate that these nanoparticles are promising materials for laser applications. (C) 2010 Published by Elsevier B. V.

Numerical simulation of a bubble rising in shear-thinning fluids

The motion of a single bubble rising freely in quiescent non-Newtonian viscous fluids was investigated experimentally and computationally. The non-Newtonian effects in the flow of viscous inelastic fluids are modeled by the Carreau theological model. An improved level set approach for computing the incompressible two-phase flow with deformable free interface is used. The control volume formulation with the SIMPLEC algorithm incorporated is used to solve the governing equations on a staggered Eulerian grid. The simulation results demonstrate that the algorithm is robust for shear-thinning liquids with large density (rho(1)/rho(g) up to 10(3)) and high viscosity (eta(1)/eta(g) up to 10(4)). The comparison of the experimental measurements of terminal bubble shape and velocity with the computational results is satisfactory. It is shown that the local change in viscosity around a bubble greatly depends on the bubble shape and the zero-shear viscosity of non-Newtonian shear-thinning liquids. The shear-rate distribution and velocity fields are used to elucidate the formation of a region of large viscosity at the rear of a bubble as a result of the rather stagnant flow behind the bubble. The numerical results provide the basis for further investigations, such as the numerical simulation of viscoelastic fluids. (C) 2010 Elsevier B.V. All rights reserved.

Characteristics of plasma induced by interaction of a free-oscillated laser pulse with a coal target in air and combustible gas

Plasma in the air is successfully induced by a free-oscillated Nd:YAG laser pulse with a peak power of 10(2-3) W. The initial free electrons for the cascade breakdown process are from the ablated particles from the surface of a heated coal target, likewise induced by the focused laser beam. The laser field compensates the energy loss of the plasma when the corresponding temperature and the images are investigated by fitting the experimental spectra of B-2 Sigma(+) -> X-2 Sigma(+) band of CN radicals in the plasma with the simulated spectra and a 4-frame CCD camera. The electron density is estimated using a simplified Kramer formula. As this interaction occurs in a gas mixture of hydrogen and oxygen, the formation and development of the plasma are weakened or restrained due to the chaining branch reaction in which the OH radicals are accumulated and the laser energy is consumed. Moreover, this laser ignition will initiate the combustion or explosion process of combustible gas and the minimum ignition energy is measured at different initial pressures. The differences in the experimental results compared to those induced by a nanosecond Q-switched laser pulse with a peak power of 10(6-8) W are also discussed. (C) 2009 Professor T. Nejat Veziroglu. Published by Elsevier Ltd. All rights reserved.

激波管壁AlO自由基B~2∑~+-X~2∑~+和C~2∏_r-X~2∑~+带系辐射光谱的研究

爆轰驱动过程中产生的高温高压气流对铝质膜片、激波管壁产生烧蚀和冲刷作用,以致激波管壁、端盖上附有氧化铝等杂质,而高温下AlO自由基在气体分子的高速碰撞下被激发并产生强烈的辐射,从而干扰了高温气体辐射光谱的分析。用爆轰驱动加热技术将空气加热到4 000~7 000 K,利用多通道光学分析仪对AlO自由基辐射光谱进行分析,实验发现在460~530 nm波长范围内有多支辐射非常强烈的AlO自由基B2&Sigma;+-X2&Sigma;+(T00=20 689 cm-1)带系辐射谱带,且每支谱带都由多个带头组成,带头间隔约为2 nm,带头处于高频位置并向低频方向伸延。通过实验与理论计算相结合,重点分析了AlO自由基B2&Sigma;+-X2&Sigma;+带系辐射光谱的结构特征。AlO自由基C2Πr-X2&Sigma;+(T00=33 047 cm-1)带系辐射光谱处于270~335 nm波长范围内,其辐射强度相对于B2&Sigma;+-X2&Sigma;+带系较弱,并且与OH基A2&Sigma;+-X2Π(T00=32 682 cm-1)带系辐射光谱互相干扰而难以分辨,对该波段高温空气的辐射光谱分析产生不利的影响。