981 resultados para Griffen, Phebe, 1811-1839.


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国家自然科学基金资助课题(60537060)

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分别用稀盐酸、王水以及(NH_4)_2S溶液处理p-GaN表面,通过测试样品表面Ols的X射线光电子能谱(XPS),比较了这些溶液去除p-GaN表面氧化层的能力;在经不同溶液处理后的样品表面,以相同的条件制作Ni/Au电极,并测试其与p-GaN的比接触电阻,结果表明经稀盐酸处理后的样品表面,由于其氧含量较高,不能与Ni/Au形成良好的欧姆接触,而经王水和(NH_4)_2S溶液处理后的p-GaN表面,能与Ni/Au形成良好的欧姆接触;最后,通过比较样品表面的Ga/N原子浓度比,探讨了王水处理p-GaN表面能够形成良好欧姆接触的原因.

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通过改变氢气对硅烷气体的稀释程度,并保持其他的沉积参量不变,用等离子体增强化学气相沉积(PECVD)方法成功地制备出非晶/微晶相变过渡区域的硅薄膜样品。测量了样品的室温光电导和暗电导,样品的光电性能优越,在50 mW·cm~(-2)的白光照射下,光电导和暗电导的比值达到10~6。在室温下用微区喇曼谱研究了薄膜的微结构特性,用高斯函数对喇曼谱进行了拟合分析。结果表明,在我们的样品制备条件下,当H_2和SiH_4的流量比R较小时,样品表现出典型的非晶硅薄膜 的结构特性;随流量比R的增大,薄膜表现出两相结构,其中的微晶成分随氢稀释比的增大逐渐增多;用量子尺寸效应估算了两个高氢稀释样品(R > 50)中微晶粒子的平均尺寸大小为2.4 nm左右;样品的中程有序度随氢稀释程度的增加而增大。

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A carbothermal hydrogen reduction method was employed for the preparation of activated carbon supported bimetallic carbide. The resultant samples were characterized by BET surface area measurement, X-ray diffraction, and temperature-programmed reduction-mass spectroscopy. The results showed that nanostructured beta-Mo2C can be formed on the activated carbon by carbothermal hydrogen reduction above 700 degreesC. The particle sizes of beta-Mo2C increase with increasing reaction temperatures and Mo loading. The bimetallic CoMo carbide can be synthesized by the carbothermal hydrogen reduction even around 600 degreesC. The bimetallic CoMo carbide is from carbothermal hydrogen reduction of CoMoO4 precursor and is easily formed when the Co/Mo molar ratio is 1.0. Separation of the bimetallic CoMo carbide phase into Mo carbide and Co metal occurs when the temperature of the reduction is above 700 degreesC. The addition of a second metal such as Co and Ni, decreases the formation temperature of carbide because the second metal promotes formation of CHx species from reactive carbon atoms or groups on carbon material and hydrogen, which further carburizes oxide precursors. (C) 2003 Elsevier Science Ltd. All rights reserved.