Numerical simulations supporting the process design of ring rolling processes

In conventional Finite Element Analysis (FEA) of radial-axial ring rolling (RAR) the motions of all tools are usually defined prior to simulation in the preprocessing step. However, the real process holds up to 8 degrees of freedom (DOF) that are controlled by industrial control systems according to actual sensor values and preselected control strategies. Since the histories of the motions are unknown before the experiment and are dependent on sensor data, the conventional FEA cannot represent the process before experiment. In order to enable the usage of FEA in the process design stage, this approach integrates the industrially applied control algorithms of the real process including all relevant sensors and actuators into the FE model of ring rolling. Additionally, the process design of a novel process 'the axial profiling', in which a profiled roll is used for rolling axially profiled rings, is supported by FEA. Using this approach suitable control strategies can be tested in virtual environment before processing. © 2013 AIP Publishing LLC.

Articulating current service development practices: a qualitative analysis of eleven mental health projects.

BACKGROUND: The utilisation of good design practices in the development of complex health services is essential to improving quality. Healthcare organisations, however, are often seriously out of step with modern design thinking and practice. As a starting point to encourage the uptake of good design practices, it is important to understand the context of their intended use. This study aims to do that by articulating current health service development practices. METHODS: Eleven service development projects carried out in a large mental health service were investigated through in-depth interviews with six operation managers. The critical decision method in conjunction with diagrammatic elicitation was used to capture descriptions of these projects. Stage-gate design models were then formed to visually articulate, classify and characterise different service development practices. RESULTS: Projects were grouped into three categories according to design process patterns: new service introduction and service integration; service improvement; service closure. Three common design stages: problem exploration, idea generation and solution evaluation - were then compared across the design process patterns. Consistent across projects were a top-down, policy-driven approach to exploration, underexploited idea generation and implementation-based evaluation. CONCLUSIONS: This study provides insight into where and how good design practices can contribute to the improvement of current service development practices. Specifically, the following suggestions for future service development practices are made: genuine user needs analysis for exploration; divergent thinking and innovative culture for idea generation; and fail-safe evaluation prior to implementation. Better training for managers through partnership working with design experts and researchers could be beneficial.

Effect of process parameters on the morphology and nanostructure of roll-to-roll printed P3HT:PCBM thin films for organic photovoltaics

Roll-to-roll (R2R) gravure exhibits significant advantages such as high precision and throughput for the printing of photoactive and conductive materials and the fabrication of flexible organic electronics such as organic photovoltaics (OPVs). Since the photoactive layer is the core of the OPV, it is important to investigate and finally control the process parameters and mechanisms that define the film morphology in a R2R process. The scope of this work is to study the effect of the R2R gravure printing and drying process on the nanomorphology and nanostructure of the photoactive P3HT:PCBM thin films printed on PEDOT:PSS electrodes towards the fabrication of indium tin oxide (ITO)-free flexible OPVs. In order to achieve this, P3HT:PCBM blends of different concentration were R2R printed under various speeds on the PEDOT:PSS layers. Due to the limited drying time during the rolling, an amount of solvent remains in the P3HT:PCBM films and the slow-drying process takes place which leads to the vertical and lateral phase separation, according to the Spectroscopic Ellipsometry and Atomic Force Microscopy analysis. The enhanced slow-drying leads to stronger phase separation, larger P3HT crystallites according to the Grazing Incidence X-Ray Diffraction data and to weaker mechanical response as it was shown by the nanoindentation creep. However, in the surface of the films the P3HT crystallization is controlled by the impinged hot air during the drying, where the more the drying time the larger the surface P3HT crystallites. The integration of the printed P3HT:PCBM and PEDOT:PSS layers in an OPV device underlined the feasibility of fabricating ITO-free flexible OPVs by R2R gravure processes. © 2013 Elsevier B.V.

Effects of buffer layer properties and annealing process on bulk heterojunction morphology and organic solar cell performance

The performance of polymer-fullerene bulk heterojunction (BHJ) solar cells is strongly dependent on the vertical distribution of the donor and acceptor regions within the BHJ layer. In this work, we investigate in detail the effect of the hole transport layer (HTL) physical properties and the thermal annealing on the BHJ morphology and the solar cell performance. For this purpose, we have prepared solar cells with four distinct formulations of poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) buffer layers. The samples were subjected to thermal annealing, applied either before (pre-annealing) or after (post-annealing) the cathode metal deposition. The effect of the HTL and the annealing process on the BHJ ingredient distribution - namely, poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) - has been studied by spectroscopic ellipsometry and atomic force microscopy. The results revealed P3HT segregation at the top region of the films, which had a detrimental effect on all pre-annealed devices, whereas PCBM was found to accumulate at the bottom interface. This demixing process depends on the PEDOT:PSS surface energy; the more hydrophilic the surface the more profound is the vertical phase separation within the BHJ. At the same time those samples suffer from high recombination losses as evident from the analysis of the J-V measurements obtained in the dark. Our results underline the significant effect of the HTL-active and active-ETL (electron transport layer) interfacial composition that should be taken into account during the optimization of all polymer-fullerene solar cells. © 2012 The Royal Society of Chemistry.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

3D numerical analysis of tunnelling induced damage: the influence of the alignment of a masonry building with the tunnel axis.

The development of infrastructure in major cities often involves tunnelling, which can cause damage to existing structures. Therefore, these projects require a careful prediction of the risk of settlement induced damage. The simplified approach of current methods cannot account for three-dimensional structural aspects of buildings, which can result in an inaccurate evaluation of damage. This paper investigates the effect of the building alignment with the tunnel axis on structural damage. A three-dimensional, phased, fully coupled finite element model with non-linear material properties is used as a tool to perform a parametric study. The model includes the simulation of the tunnel construction process, with the tunnel located adjacent to a masonry building. Three different type of settlements are included (sagging, hogging and a combination of them), with seven different increasing angles of the building with respect to the tunnel axis. The alignment parameter is assessed, based on the maximum occurring crack width, measured in the building. Results show a significant dependency of the final damage on the building and tunnel alignment.

Optical analysis of dislocation-related physical processes in GaN-based epilayers

In this paper, recent progresses in optical analysis of dislocation-related physical properties in GaN-based epilayers are surveyed with a brief review. The influence of dislocations on both near-band edge emission and yellow luminescence (YL) is examined either in a statistical way as a function of dislocation density or focused on individual dislocation lines with a high spatial resolution. Threading dislocations may introduce non-radiative recombination centers and enhance YL, but their effects are affected by the structural and chemical environment. The minority carrier diffusion length may be dependent on either dislocation density or impurity doping as confirmed by the result of photovoltaic spectra. The in situ optical monitoring of the strain evolution process is employed during GaN heteroepitaxy using an AIN interlayer. A typical transition of strain from compression to tension is observed and its correlation with the reduction and inclination of threading dislocation lines is revealed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication process and power and lifetime characteristics of very-small-aperture laser

High output power very-small-aperture laser has been created on 650 nm edge emitting laser diodes. The far-field output power is 0.4 mW at the 25 mA driving current, and the highest output power exceeds 1 mW. The special fabrication process is described and the failure mechanism leading to the short lifetime of the devices is discussed.

Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al0.7Ga0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.

Mode theory and analysis of planar array waveguides

Bloch modes can be excited in planar array due to its periodic lateral refractive index. The power coupled into each eigenmode of the array waveguides is calculated through the overlap integrals of the input field with the eigenmode fields of the coupled infinite array waveguides projected onto the x-axis. Low losses can be obtained if the transition from the array to the free propagation region is adiabatic. Due to the finite resolution of lithographic process the gap between the waveguides will stop abruptly, however, when the waveguides come into too close together. Calculation results show that losses will occur at this discontinuity, which are dependent on the ratio of the gap between the waveguides and grating pitch and on the confinement of field in the array waveguides. Tapered waveguides and low index contrast between the core and cladding layers can lower the transmitted losses.

Sand storms: CFD analysis of Reynolds stress and collision stress of particles near sand bed

Sand storm is a serious environmental threat to humans. Sand particles are transported by saltation and suspension, causing soil erosion in one place and deposition in another. In order to prevent and predict sand storms, the causes and the manners of particle motions must be studied in detail. In this paper a standard k-epsilon model is used for the gas phase simulation and the discrete element method (DEM) is used to predict the movements of particles using an in-house procedure. The data are summarized in an Eulerian-Eulerian regime after simulation to get the statistical particle Reynolds stress and particle collision stress. The results show that for the current case the Reynolds stress and the air shear stress predominate in the region 20-250 mm above the initial sand bed surface. However, in the region below 3 mm, the collision stress must be taken into account in predicting particle movement. (C) 2010 Chinese Society of Particuology and Institute of Process Engineering, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.

Strangeness production process pp -> nK(+)Sigma(+) within resonance model

We explore production mechanism and final state interaction in the pp -> nK(+)Sigma(+) channel based on the inconsistent experimental data published respectively by COSY-11 and COSY-ANKE. The scattering parameter a > 0 for n Sigma(+) interaction is favoured by large near-threshold cross section within a nonrelativistic parametrization investigation, and a strong n Sigma(+) interaction comparable to pp interaction is also indicated. Based on this analysis we calculate the contribution from resonance Delta*(1920) through pi(+) exchange within resonance model, and the numerical result suggests a rather small near-threshold total cross section, which is consistent with the COSY-ANKE data. With an additional sub-threshold resonance Delta*(1620), the model gives a much better description to the rather large near-threshold total cross section published by COSY-11

The geometry of the NO2- anion: ab initio calculations and Franck-Condon analysis

Geometry optimization and harmonic vibrational frequency calculations have been performed on the (X) over bar (2)A(1) state of NO2 and (X) over bar (1)A(1) state of NO2-. Franck-Condon analyses and spectral simulations were carried out on the NO2((X) over bar (2)A(1))-NO2-((X) over bar (1)A(1)) photo detachment process. In addition, the equilibrium geometry parameters, r(NO)= 1.248 +/- 0.005 Angstrom and angle(ONO) 116.8 +/- 0.5degrees, of the (X) over bar (1)A(1) state of NO2-, are derived by employing an iterative Franck-Condon analysis procedure in the spectral simulation. Our conclusions regarding the anion geometry suggest a reinterpretation of the results of Woo et al. (C) 2004 Published by Elsevier B.V.