Fabrication process and power and lifetime characteristics of very-small-aperture laser


Autoria(s): Song GF; Gan QQ; Qu X; Fang PY; Gao JX; Cao Q; Xu J; Kang XN; Xu Y; Zhong Y; Yang GH; Chen LH
Data(s)

2006

Resumo

High output power very-small-aperture laser has been created on 650 nm edge emitting laser diodes. The far-field output power is 0.4 mW at the 25 mA driving current, and the highest output power exceeds 1 mW. The special fabrication process is described and the failure mechanism leading to the short lifetime of the devices is discussed.

Identificador

http://ir.semi.ac.cn/handle/172111/10774

http://www.irgrid.ac.cn/handle/1471x/64583

Idioma(s)

中文

Fonte

Song GF; Gan QQ; Qu X; Fang PY; Gao JX; Cao Q; Xu J; Kang XN; Xu Y; Zhong Y; Yang GH; Chen LH .Fabrication process and power and lifetime characteristics of very-small-aperture laser ,ACTA PHYSICA SINICA,2006,54(12):5609-5613

Palavras-Chave #光电子学 #near-field optics #very-small-aperture laser #semiconductor laser #failure analysis #SURFACE-EMITTING LASER #NEAR-FIELD #SUBWAVELENGTH APERTURE #LIGHT TRANSMISSION #DATA-STORAGE #NANOAPERTURE
Tipo

期刊论文