Mass spectrometry coupled to imaging techniques: The better the view the greater the challenge

These are definitively exciting times for membrane lipid researchers. Once considered just as the cell membrane building blocks, the important role these lipids play is steadily being acknowledged. The improvement occurred in mass spectrometry techniques (MS) allows the establishment of the precise lipid composition of biological extracts. However, to fully understand the biological function of each individual lipid species, we need to know its spatial distribution and dynamics. In the past 10 years, the field has experienced a profound revolution thanks to the development of MS-based techniques allowing lipid imaging (MSI). Images reveal and verify what many lipid researchers had already shown by different means, but none as convincing as an image: each cell type presents a specific lipid composition, which is highly sensitive to its physiological and pathological state. While these techniques will help to place membrane lipids in the position they deserve, they also open the black box containing all the unknown regulatory mechanisms accounting for such tailored lipid composition. Thus, these results urges to different disciplines to redefine their paradigm of study by including the complexity revealed by the MSI techniques.

Exposição ao material particulado 2,5 m coletado em vias de alto tráfego da cidade do Rio de Janeiro: avaliação mutagênica, genotóxica e determinação de risco à saúde induzido por hidrocarbonetos policíclicos aromáticos

A mutagenicidade do material particulado é atribuída primeiramente aos hidrocarbonetos policíclicos aromáticos (HPA). Investigamos a atividade mutagênica do material particulado (MP2,5) em amostras coletadas em três pontos da cidade do Rio de Janeiro. As coletas foram realizadas com auxílio de um amostrador de grande volume na Avenida Brasil, no campus da Universidade do Estado do Rio de Janeiro e no Túnel Rebouças em filtros de fibra de vidro. Metade de cada filtro foi submetido à extração por sonicação com o solvente diclorometano. Seis HPA foram identificados e quantificados por cromatografia gasosa com espectrometria de massa (GC/MS). Após a análise química as concentrações dos HPA obtidos foram correlacionados ao fatores físicos, além de ser realizado avaliação de risco para cada HPA estudado. Linhagens de Salmonella typhimurium (TA98 e derivadas TA98/1.8-DNP6, YG1021 e YG1024) foram utilizadas no ensaio de mutagenicidade e tratadas (10-50 g/placa) com extrato orgânico na presença e na ausência de metabolização exógena. Células de raiz de cebola foram tratadas com extratos orgânicos nas concentrações (5-25g/mL). A alta umidade encontrada no Túnel Rebouças pode ter influenciado na deposição de cinco dos seis HPA estudados em material particulado. Além disso, em diferentes condições de tráfego, motoristas de ônibus que cruzam a Avenida Brasil e o Rebouças túnel estão expostos ao risco induzidos por HPA na ordem de 10-6. Mutagenicidade foi detectada tanto na presença quanto na ausência de metabolização, para as linhagens YG1021 e YG1024 nos três pontos, sugerindo a presença de nitro e amino derivados de HPA. As amostras do Túnel Rebouças apresentaram os maiores valores para rev/g e rev/m3. Estes resultados podem estar relacionados ao longo trajeto e a restrita ventilação. Efeito citotóxico foi detectado pelo ensaio Allium cepa nos três pontos de monitoramento. Além disso os extratos orgânicos provenientes das coletas da Avenida Brasil, UERJ e do Túnel Rebouças induziram efeito clastogênico em células de raiz de Allium cepa

Epitaxial growth of ZnO films on (100) and (001) gamma-LiAlO2 substrates by pulsed laser deposition

Structural and optical properties were investigated for ZnO films grown on (100) and (001) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. According XRD results, it is intuitionistic that (100) LAO is suitable for fabricating high quality ZnO film, while (001) LAO is unsuitable. The FWHM of XRD, stress in film and FWHM of UV PL spectra for ZnO films on (100) LAO show a decreasing with increasing substrate temperature from 300 to 600 degrees C. ZnO film fabricated at 600 degrees C has the greatest grain size, the smallest stress (0.47 Gpa) and PL FWHM value (similar to 85 meV). This means that the substrate temperature of 600 degrees C is optimum for ZnO film deposited on (100) LAO. Moreover, it was found that the UV PL spectra intensity of ZnO film is not only related to the grain size and stoichiometric, but also depends on the stress in the film.

Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition

Lattice-matched (Delta(a/a) = 1.8-3.4%) (001) LiGaO2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 degrees C with oxygen partial pressure of 20Pa. XRD shows that a highly c-axis-oriented ZnO film can be deposited on (001) LiGaO2 substrate at 500 degrees C. AFM images reveal the surfaces of as-deposited ZnO films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees C, respectively. PL spectra indicate only near-band-edge UV emission appears in the curve of ZnO film deposited at 500 degrees C. The deep-level emission of ZnO film deposited at 650 degrees C probably results from Li diffusion into the film. All the results illustrate substrate temperature plays a pretty important role in obtaining ZnO film with a high quality on LiGaO2 substrate by pulsed-laser deposition. (c) 2006 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties of ZnO thin film on gamma-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown oil (100) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown oil (100) LAO substrate at the substrate temperature of 550 degrees C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 urn is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. (c) 2005 Elsevier B.V. All rights reserved.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.