Realization of an ultracompact low-loss photonic crystal corner mirror

We report on the realization and characterization of an ultracompact, low-loss, and broadband corner mirror based on photonic crystals (PCs). By modifying the boundary layers of the PC region, extra losses of 1.1 +/- 0.4 dB per corner mirror are achieved for transverse-electronic polarization for silicon-on-insulator ridge waveguides fabricated by electron beam lithography and inductively coupled plasma etching. Dimensions of the PC corner mirror are less than 7 x 7 mu m(2), which are only about one tenth of conventional waveguide corner mirrors.

Prediction and suppression of strong dispersive coupling in microracetrack channel drop filters

For a four-port microracetrack channel drop filter, unexpected transmission characteristics due to strong dispersive coupling are demonstrated by the light tunneling between the input-output waveguides and the resonator, where a large dropping transmission at off-resonance wavelengths is observed by finite-difference time-domain simulation. It causes a severe decline of the extinction ratio and finesse. An appropriate decrease of the coupling strength is found to suppress the dispersive coupling and greately increase the extinction ratio and finesse, a decreased coupling strength can be realized by the application of an asymmetrical coupling waveguide structure. In addition, the profile of the coupling dispersion in the transmission spectra can be predicted based on a coupled mode theory analysis of an equivalent system consisting of two coupling straight waveguides. The effects of structure parameters on the transmission spectra obtained by this method agree well with the numerical results. It is useful to avoid the strong dispersive coupling region in the filter design. (c) 2007 Optical Society of America.

Equilateral-triangle-resonator injection lasers with directional emission

Equilateral-triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 pm up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mu m from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K.

Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy

We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170-200 mA for a cavity length of 0.9-1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

Structure tuning of line-defect waveguides based on silicon-on-insulator photonic crystal slabs

We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides.

Geometry parameter optimization of large cross-sectional S-shaped bent rib waveguides for silicon based optical switches

地址: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Silicon bench for passive coupling and packaging of high-frequency optoelectronic devices

Coupling and packaging have become decisive factors in the final performance and cost of high-frequency optoelectronic devices. Here, we report the design and successful fabrication of a silicon bench that integrates a V-groove and high-frequency coplanar waveguide (CPW) on the same high-resistivity silicon wafer as an effective optoelectronic packaging solution.

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm(2) and a characteristic temperature To of 145 K were observed for the laser diode.

Effect of disorder on self-collimated beam in photonic crystal

We report a numerical analysis of various types of disorder effects on self-collimated beam in two-dimensional photonic crystal. Finite-difference time-domain (FDTD) method is used to simulate the process by using a pulse propagation technique. The position disorders along the directions parallel and perpendicular to the incidence are considered. We show that random disorder along the perpendicular direction will have a lesser effect on the performance of the dispersion waveguides than those along the parallel direction. Furthermore, the self-collimation waveguide (SCW) has new characteristics when compared with the photonic crystal line defect waveguide. (c) 2006 Elsevier B.V. All rights reserved.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

Surface plasmon coupling in hexagonal textured metallic microcavity

The coupling of surface plasmons to the photonic modes in hexagonal textured metallic microcavity was studied. The modified photonic modes enable efficient coupling with the luminescence source in the microcavity. Hexagonal photonic crystal lattice has higher folding symmetry providing more channels for surface plasmon coupling in different in-plane directions, i.e., more isotropic light extraction profile than one-or two-dimensional gratings. Results show that strong coupling between surface plasmon modes and the waveguide mode in the microcavity has led to angle-selective enhanced light extraction and it was as much as 12 times more light extracted compare to planar microcavity. (c) 2006 American Institute of Physics.

Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets

Transport phenomena in radial flow metalorganic chemical vapor deposition (MOCVD) reactor with three concentric vertical inlets are studied by two-dimensional numerical modeling. By varying the parameters such as gas pressure, flow rates combination of multi-inlets, geometric shapes and sizes of reactor and flow distributor, temperatures of susceptor and ceiling, and susceptor rotation, the corresponding velocity, temperature, and concentration fields inside the reactor are obtained; the onset and change of flow recirculation cells under influences of those parameters are determined. It is found that recirculation cells, originated from flow separation near the bend of reactor inlets, are affected mainly by the reactor height and shape, the operating pressure, the flow rates combination of multi-inlets, and the mean temperature between susceptor and ceiling. By increasing the flow rate of mid-inlet and the mean temperature, decreasing the pressure, maintaining the reactor height below certain criteria, and trimming the bends of reactor wall and flow distributor to streamlined shape, the recirculation cells can be minimized so that smooth and rectilinear flow prevails in the susceptor region, which corresponds to smooth and rectilinear isotherms and larger reactant concentration near the susceptor. For the optimized reactor shape, the reactor size can be enlarged to diameter D = 40 cm and height H = 2 cm without flow recirculation. The susceptor rotation over a few hundred rpm around the reactor central axis will induce the recirculation cell near the exit and deflect the streamlines near the susceptor, which is not the case for vertical reactors. (c) 2006 Elsevier B.V. All rights reserved.

Distributed mode coupling in microring channel drop filters

The authors present the observation of wide transmission dips in a microring channel drop filter by two-dimensional finite-difference time-domain simulation. The authors show that distributed mode coupling between the input waveguide and the resonator results in the oscillations of the coupling efficiency and the envelope of transmission spectra with wavelength. The critical coupling as the light just passing through the coupling region is important for optimizing related devices. If the width of the input waveguide is different from that of the ring resonator, the phenomenon can be greatly reduced. (c) 2006 American Institute of Physics.

Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K.

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.