Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD

GaN epitaxy films were grown on (0001) oriented sapphire substrate by metal-organic vapor deposition(MOCVD). AFM and SEM were used to analyze the surface morphology of GaN films. Hardness and critical load of GaN films were measured by an nano-indentation tester, friction coefficient by reciprocating UMT-2MT tribometer. It is found that the surface of GaN film is smooth and the epitaxial growth mechanism is in two-dimension mode, GaN epitaxy films also belong to ultra-hardness materials, whose hardness is 22.1 MPa and elastic modulus is 299.5 GPa. Adhesion strength of epitaxial GaN to sapphire is high, and critical load reaches 1.6 N. Friction coefficient against GCr15 ball is steadily close to 0.13, while GaN films turns to be broken rapidly by using Si3N4 ceramic ball as counterpart.

Quantum mechanical effects in nanometer field effect transistors

The atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide-semiconductor field-effect transistors (MOSFETs) are presented. When compared with semiclassical Thomas-Fermi simulation results, there are significant differences in I-V curve, electron threshold voltage, and gate capacitance. In many aspects, the quantum mechanical effects exacerbate the problems encountered during device minimization, and it also presents different mechanisms in controlling the behaviors of a nanometer device than the classical one. (c) 2007 American Institute of Physics.

Shape evolution of Ge/Si(001) islands induced by strain-driven alloying

The shape evolution of Ge/Si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. We find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. While at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. The presence of the atomic intermixing between the Ge islands and Si substrate at high deposition rate is responsible for the reverse evolution. (C) 2001 American Institute of Physics.

Disentangling mechanical and mass effects on nanomechanical resonators

Micro and nanomechanical resonators are powerful and label-free sensors of analytes in various environments. Their response, however, is a convolution of mass, rigidity, and nanoscale heterogeneity of adsorbates. Here we demonstrate a procedure to disentangle this complex sensor response, to simultaneously measure both mass and elastic properties of nanometer thick samples. This turns an apparent disadvantage of these resonators into a striking and unique asset, enabling them to measure more than mass alone.

Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films

Temperature-dependent photoluminescence characteristics of non-polar m-plane ZnO and ZnMgO alloy films grown by metal organic chemical vapor deposition have been studied. The enhancement in emission intensity caused by localized excitons in m-plane ZnMgO alloy films was directly observed and it can be further improved after annealing in nitrogen. The concentration of Zn vacancies in the films was increased by alloying with Mg, which was detected by positron annihilation spectroscopy. This result is very important to directly explain why undoped Zn1-xMgxO thin films can show p-type conduction by controlling Mg content, as discussed by Li [Appl. Phys. Lett. 91, 232115 (2007)].

Extracting nanobelt mechanical properties from nanoindentation

A three-spring-in-series model is proposed for the nanobelt (NB) indentation test. Compared with the previous two-spring-in-series model, which considers the bending stiffness of atomic force microscope cantilever and the indenter/NB contact stiffness, this model adds a third spring of the NB/substrate contact stiffness. NB is highly flexural due to its large aspect ratio of length to thickness. The bending and lift-off of NB form a localized contact with substrate, which makes the Oliver-Pharr method [W. C. Oliver and G. M. Pharr, J. Mater. Res. 7, 1564 (1992)] and Sneddon method [I. N. Sneddon, Int. J. Eng. Sci. 3, 47 (1965)] inappropriate for NB indentation test. Because the NB/substrate deformation may have significant impact on the force-indentation depth data obtained in experiment, the two-spring-in-series model can lead to erroneous predictions on the NB mechanical properties. NB in indentation test can be susceptible to the adhesion influence because of its large surface area to volume ratio. NB/substrate contact and adhesion can have direct and significant impact on the interpretation of experimental data. Through the three-spring-in-series model, the influence of NB/substrate contact and adhesion is analyzed and methods of reducing such influence are also suggested. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432748]

Mechanical Behavior of Nanometer Ni by Simulating Nanoindentation

An indentation simulation of the crystal Ni is carried out by a molecular dynamics technique (MD) to study the mechanical behavior at nanometer scales. Indenter tips with both sphere shape and conical shape with 60 cone angle are used, and simulation samples with different crystal orientations are adopted. Some defects such as dislocations and point defects are observed. It is found that nucleated defects (dislocations, amorphous atoms) are from the local region near the pin tip or the sample surface. The temperature distribution of the local region is analyzed and it can explain our MD simulation results.