Quantum mechanical effects in nanometer field effect transistors
Data(s) |
2007
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Resumo |
The atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide-semiconductor field-effect transistors (MOSFETs) are presented. When compared with semiclassical Thomas-Fermi simulation results, there are significant differences in I-V curve, electron threshold voltage, and gate capacitance. In many aspects, the quantum mechanical effects exacerbate the problems encountered during device minimization, and it also presents different mechanisms in controlling the behaviors of a nanometer device than the classical one. (c) 2007 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Luo, JW (Luo, Jun-Wei); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Wang, LW (Wang, Lin-Wang) .Quantum mechanical effects in nanometer field effect transistors ,APPLIED PHYSICS LETTERS,APR 2 2007,90 (14):Art.No.143108 |
Palavras-Chave | #半导体物理 #PARTICLE POINT |
Tipo |
期刊论文 |